GaAs, pHEMT, MMIC, Medium Power Amplifier, 24 GHz to 35 GHz HMC1131 GND NIC 5 NIC 6 14 NIC 13 NIC 12 NIC 11 VGG2 10 9 NIC NIC NIC 8 HMC1131 7 Point-to-point radios Point-to-multipoint radios VSAT and SATCOM 1.5k 1.5k VGG1 APPLICATIONS NIC 15 19 4 VDD4 RFOUT GND VDD3 16 20 GND 3 VDD2 GND RFIN 21 NIC 17 22 18 2 VDD1 1 NIC NIC 23 FUNCTIONAL BLOCK DIAGRAM High saturated output power (PSAT): 25 dBm High output third-order intercept (IP3): 35 dBm High gain: 22 dB (24 GHz to 27 GHz) High output power for 1 dB compression (P1dB): 24 dBm DC supply: 5 V at 225 mA Compact 24-lead, 4 mm x 4 mm LCC package 24 FEATURES PACKAGE BASE 13105-001 Data Sheet Figure 1. GENERAL DESCRIPTION The HMC1131 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), driver amplifier that operates from 24 GHz to 35 GHz. The HMC1131 provides 22 dB of gain at the 24 GHz to 27 GHz range, 35 dBm output IP3, and 24 dBm of output power at 1 dB gain compression, while requiring 225 mA Rev. A from a 5 V supply. The HMC1131 is capable of supplying 25 dBm of saturated output power and is housed in a compact, 4 mm x 4 mm ceramic leadless chip carrier (24-lead LCC). The HMC1131 is an ideal driver amplifier for a wide range of applications, including point-to-point radios, from 24 GHz to 35 GHz. Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. 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Technical Support www.analog.com HMC1131* Product Page Quick Links Last Content Update: 11/01/2016 Comparable Parts Reference Materials View a parametric search of comparable parts Press * Medium-Power Driver Amplifier Delivers High Gain and Output Power for Easy Integration in Communications Systems Evaluation Kits * HMC1131 Evaluation Board Documentation Application Notes * AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers * Broadband Biasing of Amplifiers General Application Note * MMIC Amplifier Biasing Procedure Application Note * Thermal Management for Surface Mount Components General Application Note Data Sheet * HMC1131: GaAs, pHEMT, MMIC, Medium Power Amplifier, 24 GHz to 35 GHz Data Sheet Design Resources * * * * HMC1131 Material Declaration PCN-PDN Information Quality And Reliability Symbols and Footprints Discussions View all HMC1131 EngineerZone Discussions Sample and Buy Visit the product page to see pricing options Technical Support Submit a technical question or find your regional support number * This page was dynamically generated by Analog Devices, Inc. and inserted into this data sheet. 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HMC1131 Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 ESD Caution...................................................................................4 Applications ....................................................................................... 1 Pin Configuration and Function Descriptions..............................5 Functional Block Diagram .............................................................. 1 Interface Schematics .....................................................................6 General Description ......................................................................... 1 Typical Performance Characteristics ..............................................7 Revision History ............................................................................... 2 Applications Information .............................................................. 11 Electrical Specifications ................................................................... 3 Evaluation PCB ........................................................................... 12 24 GHz to 27 GHz Frequency Range ......................................... 3 Typical Application Circuit ........................................................... 13 27 GHz to 35 GHz Frequency Range ......................................... 3 Outline Dimensions ....................................................................... 14 Absolute Maximum Ratings............................................................ 4 Ordering Guide .......................................................................... 14 REVISION HISTORY 9/15--Rev. 0 to Rev. A Changes to Features Section and General Description Section........ 1 Change to Gain Parameter, Table 1 ................................................ 3 7/15--Revision 0: Initial Version Rev. A | Page 2 of 14 Data Sheet HMC1131 ELECTRICAL SPECIFICATIONS 24 GHz TO 27 GHz FREQUENCY RANGE TA = 25C, VDD1 = VDD2 = VDD3 = VDD4 = 5 V, IDD = 225 mA, unless otherwise stated. Adjust VGG1 and VGG2 between -2 V to 0 V to achieve IDD = 225 mA typical. Table 1. Parameter FREQUENCY RANGE GAIN Gain Variation Over Temperature RETURN LOSS Input Output OUTPUT Output Power for 1 dB Compression Saturated Output Power Output Third-Order Intercept 1 SUPPLY CURRENT Total Supply Current Total Supply Current vs. VDD 2 1 2 Symbol P1dB PSAT IP3 Min 24 18 20 IDD Typ Max 27 22 0.031 Unit GHz dB dB/C 8 7 dB dB 23 27 34 dBm dBm dBm 225 4 5 mA V V Measurement taken at POUT/tone = 10 dBm. The amplifier operates over the full voltage ranges shown. VGG1 and VGG2 are adjusted to achieve IDD = 225 mA at 5 V. 27 GHz TO 35 GHz FREQUENCY RANGE TA = 25C, VDD1 = VDD2 = VDD3 = VDD4 = 5 V, IDD = 225 mA, unless otherwise stated. Adjust VGG1 and VGG2 between -2 V to 0 V to achieve IDD = 225 mA typical. Table 2. Parameter FREQUENCY RANGE GAIN Gain Variation Over Temperature RETURN LOSS Input Output OUTPUT Output Power for 1 dB Compression Saturated Output Power Output Third-Order Intercept 1 SUPPLY CURRENT Total Supply Current Total Supply Current vs. VDD 2 1 2 Symbol P1dB PSAT IP3 Min 27 18 21 IDD Measurement taken at POUT/tone = 10 dBm. The amplifier operates over the full voltage ranges shown. VGG1 and VGG2 are adjusted to achieve IDD = 225 mA at 5 V. Rev. A | Page 3 of 14 Typ Max 35 20 0.031 Unit GHz dB dB/C 8 7 dB dB 24 25 35 dBm dBm dBm 225 4 5 mA V V HMC1131 Data Sheet ABSOLUTE MAXIMUM RATINGS Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. Table 3. Parameter Drain Bias Voltage (VDD) RF Input Power (RFIN) Channel Temperature Continuous Power Dissipation (PDISS), TA = 85C (Derate 22 mW/C) Thermal Resistance, RTH (Junction to Ground Paddle) Operating Temperature Storage Temperature ESD Sensitivity, Human Body Model (HBM) Maximum Peak Reflow Temperature Rating 5.5 V 12 dBm 175C 1.97 W 45.5C/W -40C to +85C -65C to +150C Class 0, passed 150 V 260C ESD CAUTION Rev. A | Page 4 of 14 Data Sheet HMC1131 VDD1 VDD2 VDD3 VDD4 NIC 23 22 21 20 19 GND 14 NIC NIC 6 13 NIC 12 15 5 NIC 4 NIC 11 GND 10 RFOUT TOP VIEW (Not to Scale) NIC 16 VGG2 HMC1131 9 3 8 GND RFIN NIC NIC 17 VGG1 18 2 7 1 NIC NIC GND NOTES 1. NIC = NOT INTERNALLY CONNECTED. 2. THE EXPOSED PAD MUST BE CONNECTED TO RF/DC GROUND. 13105-100 NIC 24 PIN CONFIGURATION AND FUNCTION DESCRIPTIONS Figure 2. Pin Configuration Table 4. Pin Function Descriptions Pin No. 1, 5 to 7, 9, 10, 12 to 14, 18, 19, 24 2, 4, 15, 17 3 8 Mnemonic NIC GND RFIN VGG1 11 VGG2 16 20 to 23 RFOUT VDD4 to VDD1 EPAD Description Not Internally Connected. However, all data was measured with these pins connected to RF/dc ground externally. Ground. These pins must be connected to RF/dc ground. RF Input. This pin is ac-coupled and matched to 50 . Gate Bias Pin for the First and Second Stages. External bypass capacitors of 100 pF, 10 nF, and 4.7 F are required for this pin. Gate Bias Pin for the Third and Fourth Stages. External bypass capacitors of 100 pF, 10 nF, and 4.7 F are required for this pin. RF Output. This pin is ac-coupled and matched to 50 . Drain Bias Voltage Pins. External bypass capacitors of 100 pF, 10 nF, and 4.7 F are required for these pins. Exposed Pad. The exposed pad must be connected to RF/dc ground. Rev. A | Page 5 of 14 HMC1131 Data Sheet INTERFACE SCHEMATICS 13105-025 1.5k 13105-028 RFOUT RFIN 1.5k Figure 3. RFIN Interface Schematic Figure 6. RFOUT Interface Schematic VDD1, VDD2, VDD3, VDD4 13105-029 13105-026 GND Figure 4. GND Interface Schematic 13105-027 VGG1, VGG2 Figure 7. VDD1 to VDD4 Interface Schematic Figure 5. VGG1/VGG2 Interface Schematic Rev. A | Page 6 of 14 Data Sheet HMC1131 TYPICAL PERFORMANCE CHARACTERISTICS 30 30 28 20 24 10 GAIN (dB) RESPONSE (dB) 26 0 22 20 18 -10 16 25 27 29 31 33 35 37 FREQUENCY (GHz) 12 24 13105-002 -30 23 -5 OUTPUT RETURN LOSS (dB) -5 -10 -15 -20 -25 26 27 28 29 30 31 32 33 34 35 36 FREQUENCY (GHz) Figure 9. Input Return Loss vs. Frequency at Various Temperatures 28 29 30 31 32 33 34 35 36 -10 -15 -20 -25 -35 24 TA = +85C TA = +25C TA = -40C 25 26 27 28 29 30 31 32 33 34 35 36 FREQUENCY (GHz) Figure 12. Output Return Loss vs. Frequency at Various Temperatures 30 28 28 26 26 24 24 P1dB (dBm) 30 22 20 18 22 20 18 16 TA = +85C TA = +25C TA = -40C 14 12 24 25 26 27 28 29 30 31 32 33 34 35 FREQUENCY (GHz) 14 36 Figure 10. P1dB vs. Frequency at Various Temperatures 12 24 4V 5V 25 26 27 28 29 30 31 32 33 34 35 FREQUENCY (GHz) Figure 13. P1dB vs. Frequency at Various Supply Voltages Rev. A | Page 7 of 14 36 13105-007 16 13105-004 P1dB (dBm) 27 -30 TA = +85C TA = +25C TA = -40C 13105-003 INPUT RETURN LOSS (dB) 0 25 26 Figure 11. Gain vs. Frequency at Various Temperatures 0 -30 25 FREQUENCY (GHz) Figure 8. Response (Broadband Gain and Return Loss) vs. Frequency -35 24 TA = +85C TA = +25C TA = -40C 14 13105-005 S11 S21 S22 13105-006 -20 Data Sheet 30 30 28 28 26 26 24 24 PSAT (dBm) 22 20 18 20 18 16 TA = +85C TA = +25C TA = -40C 25 26 27 28 29 30 31 32 33 34 35 36 FREQUENCY (GHz) 28 28 26 26 24 24 PSAT (dBm) 30 22 20 18 27 28 29 30 31 32 33 34 35 36 22 20 18 16 16 175mA 200mA 225mA 250mA 25 26 27 28 29 30 31 32 33 34 35 175mA 200mA 225mA 250mA 14 36 FREQUENCY (GHz) 12 24 13105-009 14 25 26 27 28 29 30 31 32 33 34 38 36 36 34 34 OUTPUT IP3 (dBm) 40 38 32 30 28 26 24 32 30 28 26 24 TA = +85C TA = +25C TA = -40C 26 27 28 29 30 31 32 33 34 35 175mA 200mA 225mA 250mA 22 36 FREQUENCY (GHz) 13105-010 25 36 Figure 18. PSAT vs. Frequency at Various Supply Currents 40 22 35 FREQUENCY (GHz) Figure 15. P1dB vs. Frequency at Various Supply Currents OUTPUT IP3 (dBm) 26 Figure 17. PSAT vs. Frequency at Various Supply Voltages 30 20 24 25 FREQUENCY (GHz) Figure 14. PSAT vs. Frequency at Various Temperatures 12 24 4V 5V 12 24 13105-012 12 24 14 13105-008 14 13105-011 16 P1dB (dBm) 22 Figure 16. Output IP3 vs. Frequency at Various Temperatures, POUT/Tone = 10 dBm 20 24 25 26 27 28 29 30 31 32 33 34 35 36 FREQUENCY (GHz) Figure 19. Output IP3 vs. Frequency at Various Supply Currents, POUT/Tone = 10 dBm Rev. A | Page 8 of 14 13105-013 PSAT (dBm) HMC1131 Data Sheet HMC1131 40 70 28GHz 30GHz 32GHz 34GHz 38 60 34 OUTPUT IM3 (dBc) 32 30 28 26 50 40 24 30 22 27 28 29 30 31 32 33 34 35 36 FREQUENCY (GHz) 20 14 12 16 Figure 23. Output Third-Order Intermodulation (IM3) vs. POUT/Tone at VDD = 4 V 30 400 60 25 370 20 340 15 310 10 280 POUT (dBm), GAIN (dB), PAE (%) 70 50 40 30 28GHz 30GHz 32GHz 34GHz 20 4 6 8 10 12 14 16 POUT/TONE (dBm) 0 -15 -13 -11 26 26 GAIN (dB), P1dB (dBm), PSAT (dBm) 27 25 24 23 22 21 225 250 IDD (mA) 13105-016 PSAT GAIN P1dB 200 -7 -5 -3 -1 1 3 7 5 220 9 Figure 24. Power Compression at 30.5 GHz (PAE Is Power Added Efficiency) 27 19 175 -9 250 INPUT POWER (dBm) Figure 21. Output Third-Order Intermodulation (IM3) vs. POUT/Tone at VDD = 5 V 20 POUT PAE GAIN IDD 5 13105-015 OUTPUT IM3 (dBc) 10 8 POUT/TONE (dBm) Figure 20. Output IP3 vs. Frequency for Various Supply Voltages, POUT/Tone = 10 dBm GAIN (dB), P1dB (dBm), PSAT (dBm) 6 4 13105-018 26 IDD (mA) 25 13105-017 4V 5V 13105-014 20 24 Figure 22. Gain, P1dB, and PSAT vs. Supply Current (IDD) at 30.5 GHz 25 24 23 22 21 PSAT GAIN P1dB 20 19 4.0 4.2 4.4 4.6 4.8 5.0 VDD (V) Figure 25. Gain, P1dB, and PSAT vs. Supply Voltage (VDD) at 30.5 GHz Rev. A | Page 9 of 14 13105-019 OUTPUT IP3 (dBm) 36 HMC1131 Data Sheet 0 40 35 OUTPUT IP3 (dBm) 30 -20 -30 -40 20 15 TA = +85C TA = +25C TA = -40C 25 26 27 28 29 30 31 32 33 34 35 10dBm 12dBm 14dBm 5 36 FREQUENCY (GHz) 0 170 Figure 26. Reverse Isolation vs. Frequency at Various Temperatures 175 180 185 190 195 200 205 210 215 220 225 IDD (mA) 13105-023 -60 24 Figure 29. Output IP3 vs. IDD over POUT/Tone at 30 GHz, VDD = 5 V, IDD = 225 mA, IDD2 = Fixed, and IDD1 Varied from 0 mA to 50 mA 25 25 20 20 15 15 GAIN (dB) INPUT IP3 (dBm) 25 10 -50 13105-020 REVERSE ISOLATION (dB) -10 10 5 10 5 175 180 185 190 195 200 205 210 215 220 225 IDD (mA) 0 170 13105-021 0 170 Figure 27. Input IP3 vs. IDD over POUT/Tone at 30 GHz, VDD = 5 V, IDD = 225 mA, IDD2 = Fixed, and IDD1 Varied from 0 mA to 50 mA 27GHz 28GHz 30GHz 32GHz 33GHz 34GHz 1.4 1.2 1.0 0.8 0.6 -12 -9 -6 -3 -0 3 6 9 INPUT POWER (dBm) 185 190 195 200 205 210 215 220 225 Figure 30. Gain vs. IDD over POUT/Tone = 14 dBm at 30 GHz, VDD = 5 V, IDD = 225 mA, IDD2 = Fixed, and IDD1 Varied from 0 mA to50 mA 13105-022 POWER DISSIPATION (W) 1.6 180 IDD (mA) 2.0 1.8 175 13105-024 10dBm 12dBm 14dBm Figure 28. Power Dissipation (PDISS) at 85C vs. Input Power for Various Frequencies Rev. A | Page 10 of 14 Data Sheet HMC1131 APPLICATIONS INFORMATION The following is the recommended bias sequence during power-down: The HMC1131 is a GaAs, pHEMT, MMIC, medium power amplifier consisting of four gain stages in series. VGG1 is the gate bias pin for the first and second stages, while VGG2 is the gate bias pin for the third and fourth stages. A simplified block diagram is shown in Figure 31. 1. 2. All measurements for this device were taken using the evaluation printed circuit board (PCB) in its default configuration. Unless otherwise noted, the VGG1, VGG2, and VDD1 to VDD4 pins were tied together during measurement, respectively. 3. 4. The VDDx = 5 V and IDD = 225 mA bias conditions are the operating points recommended to optimize the overall performance. Unless otherwise noted, the data shown was taken using the recommended bias conditions. Operation of the HMC1131 at different bias conditions may result in performance that differs from that shown in Figure 27 and Figure 30. Biasing the HMC1131 for higher drain current typically results in higher P1dB, OIP3, and gain but at the expense of increased power consumption. The following is the recommended bias sequence during power-up: 5. Connect to ground. Set VGG1 and VGG2 to -2 V. Set VDD1 through VDD4 to 5 V. Increase VGG1 and VGG2 to achieve a quiescent IDD = 225 mA. Apply the RF signal. VDD1 IDD1A VDD3 VDD2 IDD1B VDD4 IDD2A IDD2B RFOUT RFIN IDD1 = IDD1A + IDD1B IDD2 = IDD2A + IDD2B VGG1 VGG2 Figure 31. Simplified Block Diagram Rev. A | Page 11 of 14 13105-032 1. 2. 3. 4. Turn the RF signal off. Decrease VGG1 and VGG2 to -2 V to achieve a quiescent IDD = 0 mA (approximately). Decrease VDD1 through VDD4 to 0 V. Increase VGG1 and VGG2 to 0 V. HMC1131 Data Sheet EVALUATION PCB exposed paddle must be connected directly to the ground plane similar to what is shown in Figure 32. Use a sufficient number of via holes to connect the top and bottom ground planes. Generate the evaluation PCB used in this application with proper RF circuit design techniques. Signal lines at the RF port must have 50 impedance, and the package ground leads and THRU CAL VD2 VD3 TP3 + C17 C15 + + C16 C18 C11 C10 C3 C1 C2 C4 C8 + C9 TP2 TP1 VD4 TP4 VD1 U1 C12 C6 C7 C5 C13 C14 + RFOUT C20 TP5 VG2 600-00145-00-1 + + C21 C19 TP6 TP7 VCTRL VG1 13105-031 RFIN Figure 32. 600-00145-00-1 Evaluation PCB Bill of Materials Table 5. Evaluation Board (EV1HMC1131LC4) Bill of Materials Item J1, J2 TP1 to TP7 C1 to C6 C8 to C13 C15 to C20 U1 PCB 1 Description PCB mount, K connector DC pin 100 pF capacitors, 0402 package 10000 pF capacitors, 0402 package 2.2 F capacitors, 0402 package HMC1131LC4 600-00145-00-1 evaluation board, Rogers 4350 or Arlon 25FR circuit board material Blank cells in the manufacturer column left blank intentionally for they are user selectable. Rev. A | Page 12 of 14 Manufacturer 1 Analog Devices, Inc. 600-00145-00-1, Analog Devices, Inc. Data Sheet HMC1131 TYPICAL APPLICATION CIRCUIT C16 + 4.7F + C17 4.7F C10 0.01F C3 100pF C4 100pF C11 0.01F C18 + 4.7F 1 18 NIC 2 17 GND 3 16 15 VDD4 RFOUT RFOUT GND NIC 13 NIC 12 14 VGG2 VGG1 C20 + 4.7F C13 0.01F C6 100pF C5 100pF Figure 33. Typical Application Circuit Rev. A | Page 13 of 14 C12 0.01F C19 4.7F + 13105-030 NIC NIC VGG1 11 HMC1131 10 6 NIC VGG2 NIC 9 5 1.5k NIC 4 NIC 7 GND 1.5k VDD3 19 20 21 22 NIC VDD1 23 NIC GND RFIN RFIN NIC C9 0.01F VDD4 C2 100pF VDD3 C1 100pF VDD2 C8 0.01F 24 VDD1 + C15 4.7F 8 VDD2 HMC1131 Data Sheet OUTLINE DIMENSIONS PIN 1 INDICATOR 4.13 4.00 SQ 3.87 0.36 0.30 0.24 PIN 1 (0.32 x 0.32) 19 24 1 18 0.50 BSC EXPOSED PAD 2.50 SQ 13 6 7 12 TOP VIEW BOTTOM VIEW SIDE VIEW 3.10 BSC 1.02 MAX FOR PROPER CONNECTION OF THE EXPOSED PAD, REFER TO THE PIN CONFIGURATION AND FUNCTION DESCRIPTIONS SECTION OF THIS DATA SHEET. PKG-000000 SEATING PLANE 04-03-2015-A 2.50 REF Figure 34. 24-Terminal Ceramic Leadless Chip Carrier [LCC] (HE-24-1) Dimensions shown in millimeters ORDERING GUIDE Model1 HMC1131LC4 Temperature Range -40C to +85C MSL Rating2 MSL3 Lead Finish Gold over Nickel Package Description 24-Terminal LCC Package Option HE-24-1 HMC1131LC4TR -40C to +85C MSL3 Gold over Nickel 24-Terminal LCC HE-24-1 EV1HMC1131LC4 1 2 3 Evaluation Board The HMC1131LC4 and the HMC1131LC4TR are RoHS Compliant. See the Absolute Maximum Ratings section. XXXX is the 4-digit lot number. (c)2015 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D13105-0-9/15(A) Rev. A | Page 14 of 14 Branding3 H1131 XXXX H1131 XXXX