S27–1/2
FEATURES
· High voltage, current controlled
· RF resistor for RF switches
· Low diode capacitance
· Low diode forward resistance (low loss)
· Very low series inductance.
APPLICATIONS
· RF attenuators and switches
· Bandswitch for TV tuners
· Series diode for mobile communication transmit/receive switch.
DESCRIPTION
Planar PIN diode in a SOD523 ultra small SMD plastic package.
Silicon PIN diode
SOD523 SC-79
1
2
BAP65 – 02
2
ANODE
1
CATHODE
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V Rcontinuous reverse voltage – 3 0 V
II
Fcontinuous forward current – 1 00 mA
P tot total power dissipation T s
<
90°C – 7 1 5 m W
T stg storage temperature -65 +150 °C
T jjunction temperature -65 +150 °C
ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V Fforward voltage I F =50 mA 0.9 1.1 V
I Rreverse current V R =20 V – 20 nA
C ddiode capacitance V R = 0 ; f = 1 MH z 0.65 – pF
V R = 1 V; f = 1 M H z 0.55 0.9 pF
V R = 3 V; f = 1 MHz 0.5 0.8 pF
V R = 2 0 V ; f = 1 MH z 0.375 – p F
r Ddiode forward resistance I F = 1 mA; f = 100 MHz; 1 – Ω
I F = 5 mA; f = 100 MHz; note 1 0.65 0.95 Ω
I F = 10 mA; f = 100 MHz; note 1 0.56 0.9 Ω
I F = 100 mA; f = 100 MHz; 0.35 – Ω
|s 21| 2isolation V R = 0; f = 900 MHz 10 – dB
V R = 0; f = 1800 MHz 5.8 – dB
V R = 0; f = 2450 MHz 4.4 – dB
|s 21| 2insertion loss I F = 1 mA; f = 900 MHz 0.1 1 – dB
I F = 1 mA; f = 1800 MHz 0.13 – dB
I F = 1 mA; f = 2450 MHz 0.16 – dB
|s 21| 2insertion loss I F = 5 mA; f = 900 MHz 0.08 – dB
I F = 5 mA; f = 1800 MHz 0.1 1 – dB
I F = 5 mA; f = 2450 MHz 0.13 – dB
|s 21| 2insertion loss I F = 10 mA; f = 900 MHz 0.07 – dB
I F = 10 mA; f = 1800 MHz 0.1 – dB
I F = 10 mA; f = 2450 MHz 0.13 – dB
|s 21| 2insertion loss I F = 100 mA; f = 900 MHz 0.07 – dB
I F = 100 mA; f = 1800 MHz 0.1 – dB
I F = 100 mA; f = 2450 MHz 0.128 – dB
S27–2/2
BAP65-02
10
1
10 -1
048121620
I F (mA )
r D( Ω)
1000
800
600
400
200
0
10 -1 1 10 10 2
V R ( V )
C d (pF)
f = 100 MHz; T j =25°C
f = 1 MHz; T j =25°C
ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. (Continue)
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
τ Lcharge carrier life time when switched from I F =10 mA to 0.17 – µs
I R = 6 mA; R L = 100 Ω;
measured at I R =3 mA
L Sseries inductance I F =10 mA ; f =100MHz 0.6 – nH
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
Rth j-s thermal resistance from junction to soldering-point 8 5 K/W
0
- 10
- 20
- 30
- 40
f (GHz )
0
-0.1
-0.2
-0.3
-0.4
-0.5 0123
f (GHz )
|s 21| 2(dB)
Fig.1 Forward resistance as a function of
forward current; typical values. Fig.2 Diode capacitance as a function of
reverse voltage; typical values.
|s 21| 2(dB)
Fig.3 Insertion loss ( |s 21| 2 )of the diode in on-state
as a function of frequency; typical values.
Diode inserted in series with a 50 Ω stripline circuit and
biased via the analyzer Tee network.
Tamb =25°C.
Fig.4 Isolation ( |s 21| 2 ) of the diode in off-state as a
function of frequency; typical values.
Diode zero biased and inserted in
series with a 50 Ω stripline circuit.
Tamb =25°C.
(1) I F =0.5 mA.
(2) I F =1 mA.
(3) I F = 5 mA.
(4) I F = 10 mA.
(5) I F = 100mA.
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