UBE D Ml b3b72e54 0092959 4 ME NOTL 33-05 MOTOROLA SC (XSTRS/R F) MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2C3716HV Chip NPN Silicon Power Transistor hated DMO vn . . .designed for medium-speed switching and amplifier applications. D iscre te Total Switching Time 1.15 ps Typ. @ 3.0 Ade Military e Saturation Voltage 0.5 Vde Typ. @ 5.0 Adc Ope ra tio n MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vde Collector-Base Voltage VcBo 100 Vide E B Emnitter-Base Voltage VEBO 7.0 Vde Collector Current Io 10 Adc Base Current IB 4.0 Adc Power Dissipation @ Ta = 25C Py 5.0 Watts Derate above 25C 28.57 mwrc Storage and Junction Temperature Range Tstg. Ty ~ 65 to +200 C Physical Characteristics: ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Die Size Charactertettc | Symbot | Min Max Unit 110 x 130 mils Die Thickness OFF CHARACTERISTICS 8-12 mis Collector-Emitter Breakdown Voltage V(BR)CEO 80 _ Bond Pad Size: (Ig = 200 mAdc) Emitter - 15 x 40 mils Collector-Base Breakdown Voltage V(BR)CBO 100 - Vde Base 15 x 60 mils {lg = 10 wAde) Back Metal Titanium . 1000 A (Nom) Emitter-Base Breakdown Voltage V(BR)EBO 7.0 - Vdc Nickel ... 3000 A (Nom) (te = 5.0 mAdc) Silver .. 20,000 A (Nom) Collector Cutoff Current IcES maAdc Top Metal (VCE = 70 Vde) - 1.0 60 kA Alum. (Nom) (VCE = 70 Vde, Ta = 150C) _ 5.0 Back Side = Collector Collector Cutoff Current IcEx - 1.0 mAdc (VE = 100 Vde, Ve = 1.5 Vde) * Pulsed Pulse Width 250 to 350 us, Duty Cycie 1 0 to 2.0%. (conmued) DISCRETE MILITARY OPERATION DATA 3-263 WBE D MM b3b7e54 0092960 4 MENOTb MOTOROLA SC CXSTRS/R F) 2C3716HV ELECTRICAL CHARACTERISTICS continued (Ta = 25C unless otherwise noted.) Characteristic Symbol | = Min =| Max Unit ON CHARACTERISTICS OC Current Gain* hee _ (Ic = 1.0 Ade, Vcg = 2.0 Vdc) 50 150 (Ig = 3.0 Adc, VcE = 2.0 Vde) 30 120 (Ig = 5.0 Ade, VcE = 2.0 Vdc) 10 - (Ig = 10 Ade, VcE = 4.0 Vde) 5.0 - (Ig = 3.0 Ade, VcE = 2.0 Vde, Ta = 55C) 12 - Collector-Emitter Saturation Voltage VCE(sat) Vde. (Ig = 5.0 Ade, ig = 0.5 Adc) _ 1.0 (Io = 10 Ade, Ip = 2.0 Ade) _ 25 Base-Emuitter Saturation Voltage" VBE(sat) Vde (Ic = 5.0 Ade, Ig = 0.5 Adc) - 15 {Ic = 10 Ade, Ip = 2.0 Adc) - 3.0 SMALL-SIGNAL CHARACTERISTICS Smail-Signal Current Gain He 30 300 - (VE = 10 Vide, Ic = 0.5 Ade, f = 1.0 kHz) Small-Signal Current Transter Ratio, Magnitude IMtel 4.0 20 _ (VcE = 10 Vde, Ig = 0.5 Ade, f = 1.0 MHz) Output Capacitance Cobo _ 500 pF (Vog = 10 Vde, f = 100 kHz - 1.0 MHz) SWITCHING CHARACTERISTICS (Ic = 5.0 Ade, Ip = 0.5 Adc) Delay Time td _ 0.2 HS Rise Time ty _ 13 us Storage Time ts - 1.2 us Fall Time -- ty _ 1.2 Ws Turn-Off Time tott -_ 2.0 BS ASSURANCE TESTING (Pre/Post Burn-in) tnitial and End Point Limits Characteristics Tested Symbol Min Max Unit Collector Cutoff Current Ices _ 1.0 mAdc (VE = 70 Vde) OC Current Gain* hee 30 120 - (ic = 3.0 Adc, Vcg = 2.0 Vde) Deita from Pre-Burn-in Measured Values Min Max Delta Collector Cutoff Current AlcBo - +100 % of initial Value or +100 pAdc s whichever is greater Delta DC Current Gain* AEE _ +20 % of initial Value * Pulsed Pulse Width 250 to 360 ps. Duty Cycle 10 to 2 0%. DISCRETE MILITARY OPERATION DATA 3-264