Features
1 of 6
Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
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Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
InP HBT
LDMOS
RF MEMS
SGA4463Z
DC to 3500MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
The SGA4463Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high FT and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
0
6
12
18
24
0123456
Frequency (GHz)
Gain (dB)
-40
-30
-20
-10
0
Return Loss (dB)
GAIN
IRL
ORL
Gain & Return Loss vs. Frequency
VD= 3.2 V, ID= 45 mA (Typ.)
High Gain: 17 dB at 1950 MHz
Cascadable 50
Operates from Single Supply
Low Thermal Resistance
Package
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
DS111011
Package: SOT-363
SGA4463ZDC
to 3500MHz,
Cascadable
SiGe HBT
MMIC Ampli-
fier
Parameter Specification Unit Condition
Min. Typ. Max.
Small Signal Gain 17.5 19.0 21.0 dB 850MHz
17.0 dB 1950MHz
16.0 dB 2400 MHz
Output Power at 1dB Compression 14.0 dBm 850MHz
12.3 dBm 1950MHz
Output Third Intercept Point 27.0 dBm 850MHz
24.8 dBm 1950MHz
Bandwidth Determined by Return
Loss 3500 MHz >9dB
Input Return Loss 24.4 dB 1950MHz
Output Return Loss 12.8 dB 1950MHz
Noise Figure 2.8 dB 1950MHz
Device Operating Voltage 2.9 3.2 3.5 V
Device Operating Current 41 45 49 mA
Thermal Resistance
(Junction - Lead) 255 °C/W
Test Conditions: VS=8V, ID=45mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm, RBIAS=110, TL=25°C, ZS=ZL=50