DMN2005LPK N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data * * * * * * * * * * * Low On-Resistance Low Gate Threshold Voltage Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) ESD Protected Gate Qualified to AEC-Q101 Standards for High Reliability * * * * Case: X1-DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (approximate) Drain Body Diode X1-DFN1006-3 Gate S D G Bottom View ESD PROTECTED Top View Internal Schematic Gate Protection Diode Source Equivalent Circuit Ordering Information (Note 4) Part Number DMN2005LPK-7 DMN2005LPK-7B Notes: Marking DM DM Reel size (inches) 7 7 Tape width (mm) 8 8 Quantity per reel 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information DMN2005LPK-7 DM Top View Dot Denotes Drain Side DMN2005LPK Document number: DS30836 Rev. 9 - 2 DMN2005LPK-7B DM DM = Product Type Marking Code Top View Bar Denotes Gate and Source Side 1 of 6 www.diodes.com June 2012 (c) Diodes Incorporated DMN2005LPK Maximum Ratings (@TA = 25C unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current per element (Note 5) Symbol VDSS VGSS ID Value 20 10 440 Unit V V mA Symbol PD RJA Tj, TSTG Value 450 218 -65 to +150 Unit mW C/W C Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics (@TA = 25C unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Min Typ Max Unit BVDSS IDSS IGSS 20 10 5 V A A VGS = 0V, ID = 100A VDS = 17V, VGS = 0V VGS = 8V, VDS = 0V VGS(th) 0.53 1.2 V 40 0.35 0.4 0.45 0.55 0.65 1.5 1.7 1.7 3.5 3.5 mS VDS = VGS, ID = 100A VGS = 4V, ID = 10mA VGS = 2.7V, ID = 200mA VGS = 2.5V, ID = 10mA VGS = 1.8V, ID = 200mA VGS = 1.5V, ID = 1mA VDS = 3V, ID = 10mA RDS (ON) Forward Transfer Admittance Notes: Symbol |Yfs| Test Condition 5. Device mounted on FR-4 PCB. 6. Short duration pulse test used to minimize self-heating effect. DMN2005LPK Document number: DS30836 Rev. 9 - 2 2 of 6 www.diodes.com June 2012 (c) Diodes Incorporated DMN2005LPK 1.5 2.0 VGS = 4.5V 1.5 VDS = 5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 2.5V VGS = 2.0V VGS = 1.8V 1.0 VGS = 1.5V 0.5 1.0 0.5 T A = 150C TA = 125C T A = 85C VGS = 1.2V 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 0 5 1.6 VGS = 1.5V 0.8 VGS = 1.8V VGS = 2.5V 0.4 VGS = 5.0V 0 0 VGS = 4.5V 0.4 0.8 1.2 1.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 2 VGS = 4.5V ID = 1.0A VGS = 2.5.V ID = 500mA 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature DMN2005LPK Document number: DS30836 Rev. 9 - 2 3 0.8 VGS = 4.5V 0.6 TA = 150C T A = 125C 0.4 TA = 85C TA = 25C 0.2 TA = -55C 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.6 1.4 0.5 1 1.5 2 2.5 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 2.0 1.2 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 TA = 25C TA = -55C 3 of 6 www.diodes.com 0.4 0.8 1.2 1.6 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.8 0.6 VGS = 2.5V ID = 500mA 0.4 0.2 VGS = 4.5V ID = 1.0A 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature June 2012 (c) Diodes Incorporated DMN2005LPK 1.6 VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.2 IS, SOURCE CURRENT (A) 1.0 ID = 1mA 0.8 ID = 250A 0.6 0.4 1.2 T A = 25C 0.8 0.4 0.2 0 -50 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature f = 1MHz 50 C, CAPACITANCE (pF) IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) 60 40 Ciss 30 20 10 Coss C rss 0 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance 0 20 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 1,000 TA = 150C 100 T A = 125C 10 T A = 85C TA = -55C 1 TA = 25C 0.1 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage VGS, GATE-SOURCE VOLTAGE (V) 5 4 VDS = 10V ID = 250mA 3 2 1 0 0 0.1 0.2 0.3 0.4 0.5 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMN2005LPK Document number: DS30836 Rev. 9 - 2 0.6 4 of 6 www.diodes.com June 2012 (c) Diodes Incorporated DMN2005LPK r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 221C/W D = 0.02 0.01 D = 0.01 P(pk) D = Single Pulse 0.001 0.00001 t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1/t2 D = 0.005 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response 10 100 1,000 Package Outline Dimensions X1-DFN1006-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 All Dimensions in mm A A1 D b1 E e b2 L2 L3 L1 Suggested Pad Layout C Dimensions Z G1 G2 X X1 Y C X1 X G2 G1 Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 Y Z DMN2005LPK Document number: DS30836 Rev. 9 - 2 5 of 6 www.diodes.com June 2012 (c) Diodes Incorporated DMN2005LPK IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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