DMN2005LPK-7B - DIODES Incorporated

DMN2005LPK

Document number: DS30836 Rev. 9 - 2 1 of 6

www.diodes.com June 2012

DMN2005LPK

N-CHANNEL ENHAN CEMENT MODE MOSFET

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• ESD Protected Gate

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X1-DFN1006-3

• Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

Ordering Information (Note 4)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN2005LPK-7 DM 7 8 3,000

DMN2005LPK-7B DM 7 8 10,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as tho se which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

X1-DFN1006-3

Equivalent CircuitTop View

Internal Schematic

Bottom View

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain

DS

G

ESD PROTECTED

DM = Product Type Marking Code

DM DM

DMN2005LPK-7 DMN2005LPK-7B

Top View

Bar Denotes Gate

and Source Side

Top View

Dot Denotes

Drain Side

e4

DMN2005LPK

Document number: DS30836 Rev. 9 - 2 2 of 6

www.diodes.com June 2012

DMN2005LPK

Maximum Ratings (@TA = 25°C unless otherwise specified.)

Characteristic Symbol Value Unit

Drain-Source Voltage VDSS 20 V

Gate-Source Voltage VGSS ±10 V

Drain Current per element (Note 5) ID 440 mA

Thermal Characteristics

Characteristic Symbol Value Unit

Total Power Dissipation (Note 5) PD 450 mW

Thermal Resistance, Junction to Ambient R

θ

JA 218 °C/W

Operating and Storage Temperature Range T

j

, TSTG -65 to +150 °C

Electrical Characteristics (@TA = 25°C unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage BVDSS 20 ⎯ ⎯ V VGS = 0V, ID = 100μA

Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 10 µA

VDS = 17V, VGS = 0V

Gate-Source Leakage IGSS ⎯ ⎯ ±5 µA VGS = ±8V, VDS = 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage VGS

(

th

)

0.53 ⎯ 1.2 V

VDS = VGS, ID = 100μA

Static Drain-Source On-Resistance RDS (ON)

⎯

0.35

0.4

0.45

0.55

0.65

1.5

1.7

3.5

Ω

VGS = 4V, ID = 10mA

VGS = 2.7V, ID = 200mA

VGS = 2.5V, ID = 10mA

VGS = 1.8V, ID = 200mA

VGS = 1.5V, ID = 1mA

Forward Transfer Admittance |Yfs| 40 ⎯ ⎯ mS VDS = 3V, ID = 10mA

Notes: 5. Device mounted on FR-4 PCB.

6. Short duration pulse test used to minimize self-heating effect.

DMN2005LPK

Document number: DS30836 Rev. 9 - 2 3 of 6

www.diodes.com June 2012

DMN2005LPK

0

0.5

1.0

1.5

2.0

012345

Fig. 1 Typical Output Characteristics

V , DRAIN-SOURCE VOL TAGE (V)

DS

I, D

R

AI

N

C

U

R

E

N

T

(A)

D

V = 1.5V

GS

V = 2.0V

GS

V = 2.5V

GS

V = 4.5V

GS

V = 1.2V

GS

V = 1.8V

GS

0

0.5

1.0

1.5

0 0.5 1 1.5 2 2.5 3

I, D

R

AIN

C

U

R

EN

T

(A)

D

Fig. 2 Typical Transfer Characteristics

V , GATE SOURCE VOLTAGE (V)

GS

V = 5V

DS

T = -55°C

A

T = 25°C

A

T = 125°C

A

T = 150°C

A

T = 85°C

A

0

0.4

0.8

1.2

1.6

2.0

0 0.4 0.8 1.2 1.6 2

Fig. 3 Typical On-Resistance

vs. D r ai n C urrent and Gat e Volta ge

I , DRAIN-SOURCE CURRENT (A)

D

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)

Ω

V = 1.8V

GS

V = 4.5V

GS

V = 2.5V

GS

V= 1.5V

GS

V= 5.0V

GS

0

0.2

0.4

0.6

0.8

0 0.4 0.8 1.2 1.6

I , DRAIN CURRENT (A)

Fig . 4 Typi cal Drai n- Sou r ce O n-Resistance

vs . Dr ai n Cur re nt and Tem perat ur e

D

R

, D

R

AI

N

-S

O

U

R

C

E

O

N

-

R

ESIS

T

A

N

C

E ( )

DS(ON)

Ω

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = 4.5V

GS

Fig. 5 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE (°C)

J

0.6

0.8

1.0

1.2

1.4

1.6

R

, D

R

AIN-S

O

U

R

C

E

ON-RESISTAN CE (N OR M ALIZED)

DS(ON)

V = 2.5.V

I = 500mA

GS

D

V = 4.5V

I = 1.0A

GS

D

0

0.2

0.4

0.6

0.8

R

, D

R

AI

N

-S

O

U

R

C

E

O

N

-

R

ESIS

T

A

N

C

E ( )

DS(ON)

Ω

Fig. 6 On-Resistance V ariation with Temperature

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE (°C)

J

V = 4.5V

I = 1.0A

GS

D

V = 2.5V

I = 500mA

GS

D

DMN2005LPK

Document number: DS30836 Rev. 9 - 2 4 of 6

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DMN2005LPK

0

0.2

0.4

0.6

0.8

1.0

1.2

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERA T URE (°C)

A

V , GA TE THRESHOLD VOLTAGE (V)

GS(TH)

I = 250µA

D

I = 1mA

D

0

0.4

0.8

1.2

1.6

0 0.4 0.6 0.8 1.0 1.2

V , SOURCE-DRAIN VOLTAGE (V)

SD

Fi g. 8 Dio de Forw ard Voltage vs . Cur r ent

0.2

I, S

O

U

R

C

E

C

U

R

EN

T

(A)

S

T = 25°C

A

0

10

20

30

40

50

60

0 5 10 15 20

Fig. 9 Typical Capacitance

V , DRAIN-SOURCE VOLTAGE (V)

DS

C

,

C

A

P

A

C

I

T

AN

C

E (p

F

)

f = 1MHz

C

iss

C

oss

C

rss

0.1

1

10

100

1,000

2 4 6 8 10 12 14 16 18 20

Fig. 10 Typical Drain-Source Leakage Current

vs. D r ai n- So ur ce Volta ge

V , DRAIN-SOURCE VOLTAGE (V)

DS

I, D

R

AIN-S

O

U

R

C

E LEAKA

G

E

C

U

R

EN

T

(nA)

DSS

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

T = -55°C

A

0

1

2

3

4

5

0 0.1 0.2 0.3 0.4 0.5 0.6

Fig. 11 Gate-Charge Characteristics

Q , TOTAL GATE CHARGE (nC)

g

V , GATE-SOURCE VOLTAGE (V)

GS

V = 10V

I = 250mA

DS

D

DMN2005LPK

Document number: DS30836 Rev. 9 - 2 5 of 6

www.diodes.com June 2012

DMN2005LPK

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

Fig. 12 Transient Thermal Response

t , PULSE DURATION TIME (s)

1

0.001

0.01

0.1

1

r(t),

T

R

ANSIEN

T

H

E

R

MAL

R

ESIS

T

AN

C

E

T - T = P * R (t)

Duty Cycle, D = t /t

JA JA

12

θ

R (t) = r(t) *

θ

JA

R

R = 221°C/W

θ

JA

P(pk) t

1

t

2

D = 0.7

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

D = 0.5

Package Outline Dimensions

Suggested Pad Layout

X1-DFN1006-3

Dim Min Max Typ

A 0.47 0.53 0.50

A1 0 0.05 0.03

b1 0.10 0.20 0.15

b2 0.45 0.55 0.50

D 0.95 1.075 1.00

E 0.55 0.675 0.60

e ⎯ ⎯ 0.35

L1 0.20 0.30 0.25

L2 0.20 0.30 0.25

L3 ⎯ ⎯ 0.40

All Dimensions in mm

Dimensions Value (in mm)

Z 1.1

G1 0.3

G2 0.2

X 0.7

X1 0.25

Y 0.4

C 0.7

L2

A1

Eb2

L1L3

D

e

b1

A

Y

C

G1

G2

X

1

Z

DMN2005LPK

Document number: DS30836 Rev. 9 - 2 6 of 6

www.diodes.com June 2012

DMN2005LPK

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

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application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Cus tomer or user of this document or prod ucts described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

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Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

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LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the e xpress

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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