RB705D Diode, Schottky barrier, surface mount These mold-type diodes are suitable for Dimensions (Units : mm) high density surface mounting on printed . . : 2.9402 circuit boards. Each envelope contains two diodes with a common cathode. 102 11895 0.95 0.95 Features rT 0.8701 * available in SMD3 (SMD, SC-59) Ro! ee Z . : + Wan package (similar to SOT-23) | Hg ow. * part marking, DSH EIS) Applications oat ole of 53 | 4 e general detection circuits each lead has the same dimensions 3 . . . 8 Min. high speed switching ey 1 2 torn] ft ---4-}- 2.4 7 to pre pe 0.957 ! 3 co ! Te Absolute maximum ratings (T, = 25C) Parameter Symbol Limits Unit Conditions Peak reverse voltage Vam 25 Vv DC reverse voltage Vr 20 Vv Mean rectifying current lo 30 mA Peak forward surge current lesm 200 mA |At 60 Hz for | cycle Junction temperature Tj 125 C Storage temperature Totg 40 ~ +125 C Electrical characteristics (unless otherwise noted, T, = 25C) Parameter Symbol; Min |Typical| Max Unit Conditions Forward voltage Ve 0.28 0.37 Vo sjlp=1.0A Reverse current IR 0.05 1 HA |V_a=10V Capacitance between _ _ terminals Ci 2.0 pF |Va=lV,f=1 MHz Diodes REHM 179 RB705D Schottky barrier diodes Electrical characteristic curves 1 100 Typ. pulse measurement & 100m < 10 u = 7 10 - rE 5 a lu & rc x x Im g 5 3 oO uy 100 e 7) Z 100 or uw = > 5 2 10 L 14 om Vn tn 0.8 1.0 1.2 FORWARD VOLTAGE : Vr iV REVERSE VOLTAGE : Va ivi Figure 1 Figure 2 ~ 100 = 10 TTT + s : ! ' _ r oO , td c 5 2 r a z a Zz 10} - g aL. an r ot z - -fe _ ire 5 . 3 a 3S F | c 08 o i - = ul 3 1 Tr hr & b> > 0.2 ; | # 3 at 0} 0.1 g 0 5 10 15 20 25 0 8 REVERSE VOLTAGE ! Va iVi FORWARD CURRENT : Ir (mA} Figure 3 Figure 4 180 ROHM Diodes