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c 2009 ROHM Co., Ltd. All rights reserved. 2009.12 - Rev.A
4V Drive
Nch+Nch
MOSFET
SH8K4
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small surface Mount Package (SOP8).
Application
Power switching, DC / DC converter.
Packaging specifications Inner circuit
Package
Code Taping
Basic ordering unit (pieces)
SH8K4
TB
2500
Type
Absolute maximum ratings (Ta=25C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter VVDSS
Symbol
VVGSS AIDAIDP AISAISP WPD
°CTch
°CTstg
Unit
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
Continuous
Pulsed
Continuous
Source current
(Body diode) Pulsed
30
±20
±9.0
±36
1.6
6.4
2
150
−55 to +150
Limits
∗1
∗1
∗2
∗1 Pw 10μs, Duty cycle 1%
∗2 MOUNTED ON A CERAMIC BOARD.
Thermal resistance
°C / W
Rth (ch-a) 62.5
Parameter Symbol Limits Unit
C
hannel to ambient
∗
∗MOUNTED ON A CERAMIC BOARD.
Each lead has same dimensions
SOP8
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) (2) (3) (4)
(8) (7) (6) (5)
∗2
∗1
∗2
∗1
(8) (7)
(1) (2)
(6) (5)
(3) (4)
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
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c 2009 ROHM Co., Ltd. All rights reserved. 2009.12 - Rev.A
Data Sheet SH8K4
Electrical characteristics (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter Symbol
I
GSS
Y
fs
Min.
−
Typ. Max. Unit Conditions
Gate-source leakage V
(BR) DSS
Drain-source breakdown voltage
I
DSS
Zero gate voltage drain current
V
GS (th)
Gate threshold voltage
Static drain-source on-state
resistance R
DS (on)
Forward transfer admittance
Input capacitance
Output capacitance C
iss
Reverse transfer capacitance C
oss
Turn-on delay time C
rss
Rise time t
d (on)
Turn-off delay time t
r
Fall time t
d (off)
Total gate charge t
f
Gate-source charge Q
g
Gate-drain charge Q
gs
Q
gd
∗Pulsed
∗
∗
∗
∗
∗
∗
∗
∗
∗
−±10 μAV
GS
=±20V, V
DS
=0V
V
DD
15V
30 −−VI
D
=1mA, V
GS
=0V
−−1μAV
DS
=30V, V
GS
=0V
1.0 −2.5 V V
DS
=10V, I
D
=1mA
−12 17 I
D
=9.0A, V
GS
=10V
−16 23 mΩI
D
=9.0A, V
GS
=4.5V
−17 24 I
D
=9.0A, V
GS
=4V
7.0 −−SI
D
=9.0A, V
DS
=10V
−1190 −pF V
DS
=10V
−340
190 −pF V
GS
=0V
−10 −pF f=1MHz
V
GS
=10V
R
L
=3.33Ω
R
G
=10Ω
−15 −ns
−55 −ns
−22 −ns
−15 −ns
−3.0 21 nC
−6.1 −nC V
GS
=5V
−−nC I
D
=9.0A
I
D
=4.5A, V
DD
15V
Body diode characteristics (Source-Drain) (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>
Forward voltage V
SD
−−1.2 V I
S
=6.4A, V
GS
=0V
Parameter Symbol Min. Typ. Max. Unit Conditions
∗Pulsed
∗
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c 2009 ROHM Co., Ltd. All rights reserved. 2009.12 - Rev.A
Data Sheet SH8K4
Electrical characteristic curves
0.01 0.1 1 10 10
0
DRAIN-SOURCE VOLTAGE : V
DS
(V)
10
CAPACITANCE : C
(pF)
1000
10000
100
Ta=25°C
f=1MHz
V
GS
=0V
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
C
iss
C
oss
C
rss
0.01 0.1 1 1
0
DRAIN CURRENT : I
D
(A)
1
10
SWITCHING TIME : t
(ns)
1000
10000
100
Ta=25°C
V
DD
=15V
V
GS
=10V
R
G
=10Ω
Pulsed
Fig.2 Switching Characteristics
t
r
t
f
t
d (off)
t
d (on)
0 5 10 15 20 25 3
0
TOTAL GATE CHARGE : Qg (nC)
0
1
2
3
4
5
6
7
8
9
10
GATE-SOURCE VOLTAGE : V
GS
(V)
Ta=25°C
V
DD
=15V
I
D
=9A
R
G
=10Ω
Pulsed
Fig.3
Dynamic Input Characteristic
s
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4
.0
0.001
0.01
0.1
1
10
GATE-SOURCE VOLTAGE : V
GS
(V)
DRAIN CURRENT : I
D
(A)
Fig.4
Typical Transfer Characteristics
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
V
DS
=10V
Pulsed
024681012141
6
GATE-SOURCE VOLTAGE : V
GS
(V)
0
50
100
150
200
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ
)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Ta=25°C
Pulsed
I
D
=9A
I
D
=4.5A
0.01
0.1
1
10
0.0 0.5 1.0 1
.5
SOURCE-DRAIN VOLTAGE : V
SD
(V)
SOURCE CURRENT : I
s
(A)
Fig.6 Source Current vs.
Source-Drain Voltage
V
GS
=0V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1 1 1
0
DRAIN CURRENT : I
D
(A)
1
10
100
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ
)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
V
GS
=10V
Pulsed
0.1 1 1
0
1
10
100
1000
DRAIN CURRENT : I
D
(A)
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
V
GS
=4.5V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ
)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
0.1 1 1
0
1
10
100
1000
V
GS
=4V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ
)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
R0039
A
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