HMC461LP3 / 461LP3E v02.0705 11 InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features A high linearity 1 watt amplifier for: +45 dBm Output IP3 (Balanced Configuration) * Multi-Carrier Systems 12 dB Gain * GSM, GPRS & EDGE 48% PAE @ +30.5 dBm Pout * CDMA & W-CDMA +20 dBm W-CDMA Channel Power @ -45 dBc ACP * PHS 3x3 mm QFN SMT Package * Balanced or Push-Pull Configurable LINEAR & POWER AMPLIFIERS - SMT Functional Diagram General Description The HMC461LP3 & HMC461LP3E are 1.7 - 2.2 GHz high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) dual-channel MMIC amplifiers. The linear performance of two HMC455LP3 high IP3 drivers is offered in this single IC which can be configured in a balanced or push-pull amplifier circuit. The amplifier provides 12 dB of gain and +30.5 dBm of saturated power at 48% PAE from a single +5 Vdc supply while utilizing external baluns in a balanced configuration. The high output IP3 of +45 dBm coupled with the low VSWR of 1.2:1 make the HMC461LP3 & HMC461LP3E ideal driver amplifiers for PCS/3G wireless infrastructures. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the dual MMIC amplifier IC. The LP3 provides an exposed base for excellent RF and thermal performance. Electrical Specifi cations*, TA = +25 C, Vs= +5V Parameter Min. Frequency Range Gain Typ. Max. Min. 1.7 - 1.9 10 Gain Variation Over Temperature 12.5 0.012 Typ. Max. 1.9 - 2.2 9 0.02 GHz 12 0.012 Units dB 0.02 dB / C Input Return Loss 17 18 Output Return Loss 20 25 dB 29.5 dBm 30.5 dBm 45 dBm Output Power for 1dB Compression (P1dB) 26 Saturated Output Power (Psat) Output Third Order Intercept (IP3) 29 26.5 29.5 41 44 42 dB Noise Figure 6.5 6 dB Supply Current (Icq) 300 300 mA * Specifi cations and data refl ect HMC461LP3 measured with external baluns in a balanced amplifi er confi guration optimized for 1.85 - 2.2 GHz per application circuit herein. Contact HMC Applications for 1.7 - 1.85 GHz performance optimization. 11 - 250 For price, delivery, and to placeCorporation: orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343 978-250-3373 781-329-4700Fax: * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. HMC461LP3 / 461LP3E v02.0705 InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz Gain vs. Temperature Broadband Gain & Return Loss 20 +25C +85C -40C 17 5 GAIN (dB) S21 S11 S22 -5 14 11 11 -15 8 5 1.7 -25 1 1.5 2 2.5 3 1.8 Input Return Loss vs. Temperature RETURN LOSS (dB) RETURN LOSS (dB) 2.2 2.3 -5 +25C +85C -40C -10 -15 -20 +25C +85C -40C -10 -15 -20 -25 1.7 1.9 2.1 2.3 -30 1.5 2.5 1.7 FREQUENCY (GHz) 31 31 Psat (dBm) 33 29 27 +25C +85C -40C 1.8 1.9 2 2.1 2.3 2.5 Psat vs. Temperature 33 25 1.9 FREQUENCY (GHz) P1dB vs. Temperature P1dB (dBm) 2.1 0 -5 23 1.7 2 Output Return Loss vs. Temperature 0 -25 1.5 1.9 FREQUENCY (GHz) FREQUENCY (GHz) LINEAR & POWER AMPLIFIERS - SMT GAIN & RETURN LOSS (dB) 15 29 +25C +85C -40C 27 25 2.1 2.2 2.3 FREQUENCY (GHz) 23 1.7 1.8 1.9 2 2.1 2.2 2.3 FREQUENCY (GHz) Specifications and data reflect HMC461LP3 measured with external baluns in a balanced amplifier configuration optimized for 1.85 - 2.2 GHz per application circuit herein. Contact HMC Applications for 1.7 - 1.85 GHz performance optimization. For price, delivery, and to placeCorporation: orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343 978-250-3373 781-329-4700Fax: * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. 11 - 251 HMC461LP3 / 461LP3E v02.0705 InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz Noise Figure vs. Temperature 50 10 47 8 NOISE FIGURE (dB) 11 IP3 (dBm) Output IP3 vs. Temperature 44 +25C +85C -40C 41 35 1.7 4 +25C +85C -40C 2 1.8 1.9 2 2.1 2.2 0 1.7 2.3 1.8 1.9 FREQUENCY (GHz) 48 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 54 48 Pout Gain PAE 36 30 24 18 12 6 0 -10 -4 2 8 14 20 42 24 18 12 6 -4 2 G ain (dB ), P 1dB (dB m), P s at (dBm) +25C +85C -40C -15 -20 -25 1.8 1.9 2 14 20 26 Gain & Power vs. Supply Voltage @ 2.15 GHz -5 1.7 8 INPUT POWER (dBm) 0 1.6 2.3 30 0 -10 26 Reverse Isolation vs. Temperature -30 1.5 2.2 Pout Gain PAE 36 INPUT POWER (dBm) -10 2.1 Power Compression @ 2.15 GHz 54 42 2 FREQUENCY (GHz) Power Compression @ 1.95 GHz ISOLATION (dB) LINEAR & POWER AMPLIFIERS - SMT 38 6 2.1 2.2 2.3 FREQUENCY (GHz) 32 30 28 26 24 22 G ain 20 P 1dB P s at 18 16 14 12 10 8 4. 5 4.75 5 5. 25 5.5 S UP P LY VOL T AG E (Vdc) Specifications and data reflect HMC461LP3 measured with external baluns in a balanced amplifier configuration optimized for 1.85 - 2.2 GHz per application circuit herein. Contact HMC Applications for 1.7 - 1.85 GHz performance optimization. 11 - 252 For price, delivery, and to placeCorporation: orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343 978-250-3373 781-329-4700Fax: * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. HMC461LP3 / 461LP3E v02.0705 InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz ACPR vs. Supply Voltage @ 1.96 GHz CDMA2000, 9 Channels Forward ACPR vs. Supply Voltage @ 2.14 GHz W-CDMA, 64 DCPH -40 -35 -40 -50 WCDMA Frequency : 2.14 GHz Integration BW: 3.84 MHz 64 DPCH 4.5V 5V 5.5V -55 -45 -50 11 -55 -60 -60 Source ACPR Source ACPR 4.5V -65 5V 5.5V -65 8 10 12 14 16 18 20 22 24 8 Channel Output Power (dBm) 10 12 14 16 18 20 22 24 Channel Output Power (dBm) * Source ACPR: All data is RSS corrected for source ACPR. Dashed lines are shown where corrected data is below source ACPR. Absolute Maximum Ratings Output IP2 vs. Temperature 80 75 IP2 (dBm) 70 65 60 +25C +85C -40C 55 50 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) Collector Bias Voltage (Vcc1, Vcc2) +6 Vdc RF Input Power (RFIN)(Vs = +5Vdc) +30 dBm Junction Temperature 150 C Continuous Pdiss (T = 85 C) (derate 32 mW/C above 85 C) 2.08 W Thermal Resistance (junction to ground paddle) 31 C/W Storage Temperature -65 to +150 C Operating Temperature -40 to +85 C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS LINEAR & POWER AMPLIFIERS - SMT CDMA2000 Rev. 8 Frequency: 1.96 GHz Integration BW: 1.228 MHz Forward Link, SR1, 9 Channels ACPR (dBc) ACPR (dBc) -45 Specifications and data reflect HMC461LP3 measured with external baluns in a balanced amplifier configuration optimized for 1.85 - 2.2 GHz per application circuit herein. Contact HMC Applications for 1.7 - 1.85 GHz performance optimization. For price, delivery, and to placeCorporation: orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343 978-250-3373 781-329-4700Fax: * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. 11 - 253 HMC461LP3 / 461LP3E v02.0705 InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz Outline Drawing LINEAR & POWER AMPLIFIERS - SMT 11 NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC461LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC461LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] 461 XXXX [2] 461 XXXX [1] Max peak reflow temperature of 235 C [2] Max peak reflow temperature of 260 C [3] 4-Digit lot number XXXX Specifications and data reflect HMC461LP3 measured with external baluns in a balanced amplifier configuration optimized for 1.85 - 2.2 GHz per application circuit herein. Contact HMC Applications for 1.7 - 1.85 GHz performance optimization. 11 - 254 For price, delivery, and to placeCorporation: orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343 978-250-3373 781-329-4700Fax: * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. HMC461LP3 / 461LP3E v02.0705 InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz Pin Descriptions Function Description Interface Schematic 2, 3, 5 - 8, 10, 11, 13 - 16 N/C This pin may be connected to RF ground. 1, 4 IN1, IN2 RF Input. This pin is AC coupled. An off chip series matching capacitor is required. 9, 12 OUT1, OUT2 RF output and DC Bias for the output stage. GND Package bottom must be connected to RF/DC ground. 11 LINEAR & POWER AMPLIFIERS - SMT Pin Number Recommended Application Circuit for Balanced Amplifi er Confi guration Recommended Component Values L1, L2 8.2 nH C1, C2 2.2 F C5, C6 5.0 pF C7, C8 0.9 pF C3, C4 100 pF Impedance C7, C8 0.8 pF C9, C10 4.0 pF R1, R2 130 Ohm TL1 TL2 50 Ohm 50 Ohm Physical Length 0.09" 0.18" Electrical Length 9.5 19 PCB Material: 10 mil Rogers 4350, Er = 3.48 Specifications and data reflect HMC461LP3 measured with external baluns in a balanced amplifier configuration optimized for 1.85 - 2.2 GHz per application circuit herein. Contact HMC Applications for 1.7 - 1.85 GHz performance optimization. For price, delivery, and to placeCorporation: orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343 978-250-3373 781-329-4700Fax: * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. 11 - 255 HMC461LP3 / 461LP3E v02.0705 InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz Evaluation PCB LINEAR & POWER AMPLIFIERS - SMT 11 J3, J4 Pin Number Description 1, 2, 3 GND 4, 5, 6 Vs List of Materials for Evaluation PCB 106485 [1] Item Description J1, J2 PCB Mount SMA Connector J3, J4 2 mm DC Header C1, C2 2.2 F Capacitor, Tantalum C3, C4 100 pF Capacitor, 0402 Pkg. C5, C6 5 pF Capacitor, 0402 Pkg. C7, C8 0.8 pF Capacitor, 0402 Pkg. C9, C10 4 pF Capacitor, 0402 Pkg. L1, L2 8.2 nH Inductor, 0402 Pkg. U1 HMC461LP3 / HMC461LP3E Power Amplifier U2, U3 Panasonic Balun, P/N EHFFD - 1619 PCB [2] 106483 Evaluation PCB, 10 mils The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 Specifications and data reflect HMC461LP3 measured with external baluns in a balanced amplifier configuration optimized for 1.85 - 2.2 GHz per application circuit herein. Contact HMC Applications for 1.7 - 1.85 GHz performance optimization. 11 - 256 For price, delivery, and to placeCorporation: orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343 978-250-3373 781-329-4700Fax: * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. HMC461LP3 / 461LP3E v02.0705 InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz Notes: LINEAR & POWER AMPLIFIERS - SMT 11 For price, delivery, and to placeCorporation: orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343 978-250-3373 781-329-4700Fax: * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. 11 - 257