RBV5000 - RBV5010 SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 50 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 V
DC
* Ideal for printed circuit board
* Very good heat dissipation
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 8.17 grams ( Approximaly )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
RBV
5000
RBV
5001
RBV
5002
RBV
5004
RBV
5006
RBV
5008
RBV
5010
UNIT
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 7
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V
Maximum Average Forward Current Tc = 55°CIF(AV) 50 A
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms. I2t660 A2S
Maximum Forward Voltage per Diode at IF = 25 A VF1.1 V
Maximum DC Reverse Current Ta = 25 °CIR10 µA
at Rated DC Blocking Voltage Ta = 100 °CIR(H) 200 µA
Typical Thermal Resistance (Note 1) RθJC 1.5 °C/W
Operating Junction Temperature Range TJ10 °C
Storage Temperature Range TSTG - 40 to + 150 °C
Note :
1. Thermal Resistance from junction to case with units mounted on heatsink.
Page 1 of 2 Rev. 03 : September 9, 2005
RATING
IFSM 400 A
RBV25
Dimensions in millimeters
C3 4.9 ± 0.
2
3.9 ± 0.
2
~
∅ 3.2 ± 0.1
~
11 ± 0.2
17.5 ± 0.5
±
0.7 ± 0.1
1.0 ± 0.1
2.0 ± 0.2
30 ± 0.3
7.5
±0.2
10
±0.2
+
7.5
±0.2
13.5 ± 0.3
RATING AND CHARACTERISTIC CURVES ( RBV5000 - RBV5010 )
FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT FORWARD SURGE CURRENT
025 50 75 100 125 150 175
CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE PER DIODE
FORWARD VOLTAGE, VOLTS
Page 2 of 2 Rev. 03 : September 9, 2005
P.C. Board Mounted with
SINE WAVE R-Load
30
20
10
60
50
100 10
1.0
400
0
600
0
300
200
100
0.1
10
80
0.01
0.01
1.0 0.1
100 1400 20 40 60 12
0
PERCENT OF RATED REVERSE
VOLTAGE, (%)
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD OUTPUT
CURRENT AMPERES
FORWARD CURRENT, AMPERES
REVERSE CURRENT,
MICROAMPERES
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
TJ = 50 °C
TJ = 100 °C
T
J
=
25
°
C
40
500
10 20 601 2 4 6 40 10
1.2
1.4
1.8
0.4
0.6
0.8
1.0
1.6