IRG4PC50FPbF
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Parameter Min. Typ. Max. Units Conditions
QgTotal Gate Charge (turn-on) 190 290 IC = 39A
Qge Gate - Emitter Charge (turn-on) 28 42 nC VCC = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) 65 97 VGE = 15V
td(on) Turn-On Delay Time 31
trRise Time 25 TJ = 25°C
td(off) Turn-Off Delay Time 240 350 IC = 39A, VCC = 480V
tfFall Time 130 190 VGE = 15V, RG = 5.0Ω
Eon Turn-On Switching Loss 0.37 Energy losses include "tail"
Eoff Turn-Off Switching Loss 2.1 mJ See Fig. 10, 11, 13, 14
Ets Total Switching Loss 2.47 3.0
td(on) Turn-On Delay Time 28 TJ = 150°C,
trRise Time 24 IC = 39A, VCC = 480V
td(off) Turn-Off Delay Time 390 VGE = 15V, RG = 5.0Ω
tfFall Time 230 Energy losses include "tail"
Ets Total Switching Loss 5.0 mJ See Fig. 13, 14
LEInternal Emitter Inductance 13 nH Measured 5mm from package
Cies Input Capacitance 4100 VGE = 0V
Coes Output Capacitance 250 pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance 49 = 1.0MHz
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 V VGE = 0V, IC = 250µA
V(BR)ECS Emitter-to-Collector Breakdown Voltage 18 V VGE = 0V, IC = 1.0A
∆V(BR)CES/∆TJTemperature Coeff. of Breakdown Voltage 0.62 V/°C VGE = 0V, IC = 1.0mA
1.45 1.6 IC = 39A VGE = 15V
VCE(ON) Collector-to-Emitter Saturation Voltage 1.79 IC = 70A See Fig.2, 5
1.53 IC = 39A , TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 6.0 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJTemperature Coeff. of Threshold Voltage -14 mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance 21 30 S VCE = 100V, IC = 39A
250 VGE = 0V, VCE = 600V
2.0 VGE = 0V, VCE = 10V, TJ = 25°C
2000 VGE = 0V, VCE = 600V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current ±100 n A VGE = ±20V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
ICES Zero Gate Voltage Collector Current
V
µA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
ns
ns
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω,
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.