ULTRAFAST PHOTODETECTORS UPD
FEATURES:
- ultra high-speed operation
- risetime below 40 picoseconds
- wide spectral ranges
- built-in biasing
- long-life battery
- coaxial photodiode coupling
- compact design
- high sensitivity
- pulse form measurements
- pulse duration measurements
- precise synchronization
APPLICATIONS:
AN EXAMPLE OF A 10-PS LASER PULSE MEASURED BY UPD-200-SD PHOTODIODE AND 1 GHz
OSCILLOSCOPE. THE MEASURED PULSE DURATION IS LIMITED BY THE OSCILLOSCOPE BANDWIDTH.
--- ORDERING INFORMATION AND A PRACTICAL HINT ON THE NEXT PAGE ---
AVAILABLE TYPES:
PHOTODETECTOR RISE TIME QUANTUM EFFICIENCY SENSITIVE AREA
UPD-200 <
UPD-300
UPD-500
UPD-300 IR1
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Window type: P D
Dimensions: BNC-connector/*SMA-connector
200 ps 45 % 0.1 mm
300 ps 80 % 0.25 mm
500 ps 80 % 1.0 mm
300 ps 75 % 0.008 mm
polished (index ) or diffuse (index )
Housing: 20x20x60 mm +
2
2
2
2
UPD-70 IR2*
UPD-40 IR2* <
70 ps 90 % 0.005 mm
40 ps 90 % 0.003 mm
2
2
Spectral ranges: S, Silicon) U, UV-enhanced Silicon)
IR1, Germanium IR2, InGaAs
320-1100 nm (index , 190-1100 nm (index
700-1800 (index ), 800-1700 (index )
ALPHALAS GmbH
Hannah-Vogt-Str. 1, D-37085 Göttingen, Germany
Tel.: +49-551-7706147, Fax: +49-551-7706146, E-mail: sales@alphalas.com, Web-Site: www.alphalas.com
ALPHALAS GmbH
The ultrafast PIN photodiodes have certain advantages over vacuum
photodiodes. Besides the compact size and low-voltage power supply, they
feature higher sensitivity, which is typically two orders of magnitude
larger in the near infrared as compared to vacuum photodiodes.
Because
of the extremely low dark current, the built-in high-power battery provides
trouble-free operation for UP TO FIVE YEARS*! In combination with our
ultrafast low-noise amplifiers (1 GHz bandwidth) the UPD-type
photodetectors are an inexpensive alternative to the avalanche devices.
Our UV-extended version is the only commercial photodiode that covers the
spectral range from 190 nm to 1100 nm and has risetime below 200 ps.
* UPD-300-IR, UPD-500 and monitoring of lasers with repetition rate >100 Hz require
external power supply!
EXAMPLE: UPD-200-UD-L
ultrafast photodetector with 200 ps rise time,
spectral range extended to UV, with diffusor,
for low rep. rate laser pulses < 100 Hz
ORDERING INFORMATION:
A PRACTICAL HINT!
In order to evaluate the performance of a
high-speed photodetector, you do not need a
short pulse laser source at all. Just take a
small He-Ne laser and focus the light on the
sensitive area of the PIN photodiode. You
will observe a signal modulated with very
high frequency due to the
. In the figure on the right, the
beating frequency f=c/2L (c -speed of light,
L - laser cavity length) is 1.5 Gigahertz!
Since this frequency is well above the
specified 1 GHz oscilloscope bandwidth,
the modulation depth in the figure is 25%
only.
longitudinal mode
beating
LONGITUDINAL MODE
BEATING OF A He-Ne LASER AS
DETECTED BY UPD-200-SP
PHOTODIODE
UPD-XXX-XX-X
Ultrafast photo detector
Rise time (picoseconds) Window type: P=Polished
D=Diffusor
Spectral range: U=Uv
S=visible
IR=Infrared
H=High rep. rate >100 Hz
L=Low rep. rate <100 Hz
ALPHALAS GmbH
Hannah-Vogt-Str. 1, D-37085 Göttingen, Germany
Tel.: +49-551-7706147, Fax: +49-551-7706146, E-mail: sales@alphalas.com, Web-Site: www.alphalas.com
ALPHALAS GmbH
