NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC2786
TO-92
Plastic Package
For use in FM RF Amplifier
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
Collector Emitter Voltage VCEO V
Collector Base Voltage VCBO V
Emitter Base Voltage VEBO V
Base Current IBmA
Collector Current ICmA
Power Dissipation @ Ta=25ºC PCmW
Junction Temperature TjºC
Storage Temperature Range Tstg ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
Collector Cut Off Current
ICBO
VCB =30V, IE = 0
100 nA
Emitter Cutoff Current IEBO VEB =4V, Ic = 0 100 nA
Collector Emitter Saturation Voltage VCE(sat) IC = 10mA, IB = 1.0mA 0.30 V
Base Emitter On Voltage VBE(on) VCE = 6.0V,Ic = 1.0mA 0.72 V
DC Current Gain *hFE VCE = 6.0V, IC = 1.0 mA 40 180
Transition Frequency fT VCE = 6.0V, Ic = - 1.0mA 400 MHz
Power Gain Gpe VCE = 6.0V, IE = - 1.0mA, RG =50kΩ18 dB
f = 100MHz
Collector to Base Time Constant Cc rb'b VCE = 6.0V, IE = - 1.0mA, f=31.9MHz 15 ps
Output Capacitance Cob VCB = 6V, IE =0, f =1MHz 1.30 pF
Noise Figure NF VCE = 6.0V, IE = - 1.0mA, RG =50kΩ5.00 dB
f = 100MHz
*hFE Classifications
4
- 55 to + 150
20
VALUE
20
30
20
250
+150
MF : 40 - 80 LF : 60 - 120 KF : 90 - 180
C
Continental Device India Limited Data Sheet Page 1 of 3
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company