MDMA200P1600SA
Phase leg
Standard Rectifier Module
23/4 1
Part number
MDMA200P1600SA
Backside: isolated
FAV
F
VV1.06
RRM
200
1600
=
V= V
I= A
2x
Features / Ad vantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
● Diode for main rectification
● For single and three phase
bridge configurations
SimBus A
● Industry standard outline
● RoHS compliant
● Gate: Spring contacts
for solder-free PCB-mounting
● Height: 17 mm
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
● Isolation Voltage: V~
4800
IXYS reserves the right to change limits, conditions and dimensions. 20140318aData according to IEC 60747and per semiconductor unless otherwise specified
© 2014 IXYS all rights reserved
MDMA200P1600SA
V = V
kA²s
kA²s
kA²s
kA²s
Symbol Definition
Ratings
typ. max.
I
R
V
IA
V
F
1.13
R0.15 K/W
R
min.
200
V
RSM
V
200T = 25°C
VJ
T = °C
VJ
mA15V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
110
P
tot
830 WT = 25°C
C
RK/W
200
1600
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Conditions Unit
1.33
T = 25°C
VJ
150
V
F0
V0.76T = °C
VJ
150
r
F
1.4 mΩ
V1.06T = °C
VJ
I = A
F
V
200
1.32
I = A
F
400
I = A
F
400
threshold voltage
slope resistance for power loss calculation only
µA
125
V
RRM
V1600
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
273
j
unction capacitance V = V;400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
150
6.00
6.48
130.1
126.3
kA
kA
kA
kA
5.10
5.51
180.0
174.7
1600
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1700
0.08
IXYS reserves the right to change limits, conditions and dimensions. 20140318aData according to IEC 60747and per semiconductor unless otherwise specified
© 2014 IXYS all rights reserved
MDMA200P1600SA
Ratings
XXXXXXXXX
yywwA add
Part Name Date Code Data Matrix
D
M
M
A
200
P
1600
SA
Part number
Diode
Standard Rectifier
(up to 1800V)
Phase leg
SimBus A
Module
=
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm5
mounting torque 3
T
VJ
°C150
virt ua l j un ctio n temp eratu re -40
Weight g152
Symbol Definition typ. max.min.Conditions
operation temperature
Unit
M
T
Nm5
terminal torque 2.5
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
14.0 10.0
14.0 10.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 300 A
per terminal
125-40
terminal to terminal
SimBus A
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
MDMA200P1600SA 510373Blister 9MDMA200P1600SAStandard
4800
ISOL
T
stg
°C125
storage temperature -40
4000
threshold voltage V0.76
mΩ
V
0 max
R
0 max
slope resistance * 0.8
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Rectifier
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20140318aData according to IEC 60747and per semiconductor unless otherwise specified
© 2014 IXYS all rights reserved
MDMA200P1600SA
23/4 1
Outlines SimBus A
IXYS reserves the right to change limits, conditions and dimensions. 20140318aData according to IEC 60747and per semiconductor unless otherwise specified
© 2014 IXYS all rights reserved
MDMA200P1600SA
0.001 0.01 0.1 1
2000
3000
4000
5000
6000
23456789011
10
4
10
5
10
6
0.5 1.0 1.5
0
100
200
300
400
0 50 100 150 200 250
0
50
100
150
200
250
300
350
1 10 100 1000 10000
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0 50 100 150
0
50
100
150
200
250
300
350
I
F
[A]
V
F
[V]
I
FSM
[A]
t[s]
I
2
t
[A
2
s]
t[ms]
P
tot
[W]
I
F(AV)M
[A] T
amb
[°C]
I
F(AV)M
[A]
T
C
[°C]
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
Fig. 3 I
2
t versus time per diode
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
Fig. 5 Max. forward current vs.
case temperature per diode
Fig. 6 Transient thermal impedance junction to case vs. time per diode
t[ms]
0 50 100 150
50 Hz, 80%V
RRM
T
VJ
=45°C T
VJ
=45°C
V
R
=0 V
T
VJ
= 150°C T
VJ
=150°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
=150°C
DC =
1
0.5
0.4
0.33
0.17
0.08
DC =
1
0.5
0.4
0.33
0.17
0.08
R
thHA
=
0.08 K/W
0.10 K/W
0.20 K/W
0.40 K/W
0.60 K/W
0.80 K/W
Z
thJC
[K/W]
Constants for Z
thJC
calculation:
iR
thi
(K/W) t
i
(s)
1 0.006 0.0005
2 0.035 0.0400
3 0.079 0.5500
4 0.030 1.5000
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20140318aData according to IEC 60747and per semiconductor unless otherwise specified
© 2014 IXYS all rights reserved
