X7R Dielectric General Specifications INV) X7R formulations are called temperature-stable ceramics and fall into EIA Class II materials. X7R is the most popular of these intermediate dielectric-constant materials. Its temperature variation of capacitance is within +15% from -55C to +125C. This capacitance change is non-linear. Capacitance for X7R varies under the influence of electrical operating conditions such as voltage and fre- quency. It also varies with time, approximately 1% A C per decade of time, representing about 5% change in ten years. X7R dielectric chip usage covers the broad spectrum of industrial applications where known changes in capacitance due to applied voltages are acceptable. Part Number (see page 3 for complete information and options) Size Voltage Dielectric Capacitance Capacitance Failure Terminations Packaging Special (L" x W") 16V=Y X?7R=C Tolerance Rate T = Plated Ni 2= 7" Reel Code 25V =3 Preferred and Solder Paper/Unmarked A= Std. 50V =5 M= + 20% Product 100V =1 K=+10% Performance Characteristics Capacitance Range 100 pF to 2.2 uF (1.0 +0.2 Vrms, 1kHz) Capacitance Tolerances Preferred +10%, +20% others available: +5%, +80 -20% Operating Temperature Range -55C to +125C Temperature Characteristic +15% (0 VDC) Voltage Ratings 10, 16, 25, 50, 100 VDC (+125C) Dissipation Factor For 50 volts and 100 volts: 2.5% max. For 25 volts: 3.0% max. For 16 volts: 3.5% max. For 10 volts: 5% max. Insulation Resistance (+25C, RVDC) 100,000 megohms min. or 1000 MQ - pF min., whichever is less Insulation Resistance (+125C, RVDC) 10,000 megohms min. or 100 MQ - pF min., whichever is less Aging Rate 1% per decade hour Dielectric Strength 250% of rated voltage for 5 seconds at 50 mamp max. current Test Voltage 1.0 + 0.2 Vrms Test Frequency 1 KHz X7R Dielectric Typical Characteristic Curves INV) A Temperature Coefficient +12 % A Capacitance -75 -50 -25 0 +25 +50 +75 +100 +125 Temperature C A Capacitance vs. Frequency % A Capacitance {KHz 10 KHz 100 KHz 1 MHz Frequency 10 MHz Insulation Resistance vs Temperature 10,000 1,000 100 0 +20 +25 +40 +60 +80 +100 Temperature C Insulation Resistance (Ohm-Farads) Impedance, 2. Impedance, Impedance, 0 Variation of Impedance with Cap Value Impedance vs. Frequency 1,000 pF vs. 10,000 pF - X7R 0805 1.00 0.10} 10 1000~C~*~<<;CS**N OO Frequency, MHz Variation of Impedance with Chip Size Impedance vs. Frequency 10,000 pF - X7R 0.1 fe 0; ta 1 10 100 4,000 Frequency, MHz Variation of Impedance with Chip Size Impedance vs. Frequency 100,000 pF - X7R 108 0.1 01 tk aan 1 10 100 1,000 Frequency, MHz X7R Dielectric Capacitance Range Preferred Sizes are Shaded a o iam a IW) ro SIZE 0402* 0504* 0603" 0805 1005 0907 1505 (4) Length MM (in.) 1.00 + 10 {.040 + 004) 1.27 + 25 (050 + .010) 1,602.15 (.063 + .006) 2.01 + 20 (079 + 008) 2.41 4.25 (.095 + .010) 2.29% 25 (.090 + .010! 3.20 2.20 (126 + .008) 3.81 + .25 {180 + .010) (W) Width MM (in) 50+ 10 (020 + .004) 4.02 + 25 (040 + .010) Bl 15 (092 + .006) 1.25 + 20 (049 + .008) 1.27 + 25 (050 + .010) 1.78 + 25 (070 + .010; 1,60 4 .20 (063 + .008) 1.27 + 25 [.050 + .010) (7) Max. Thickness MM (in.) 68 (024) 4.02 {.040) 80 (038) 1.30 (051) 1.27 (050) 1.52 (.060) 127 (050) @) Terminal MM {in.) 25 + 16 (010 + 006} 384.13 (015 + ,005) 35 + 15 (014 + .006) 50 + 28 (020 + 070) 50 + 25 (020 + .010) 50 + 25 (.020 + .010: 50 + 25 (.020 + .010) WvDC Cap (pF) 100 120 160 180 220 270 330 390 470 560 680 820 4000 4200 1800 1800 2200 2700 3300 3900 4700 5600 6800 8200 16 | 25 50 50 400 Cap. (uF) 010 012 015 018 022 027 .033 39 047 10 16 | 25 | 50 | 100 10 | 16] 25 | 50 | 100 056 068 082 10 12 AB 25 | 50 | 100 25 50 | 100 100 109 50 Vv. a >) yi at I 18 22 27 33 AT 56 68 82 1.0 1.2 1.5 18 *IR and vapor phase soldering only recommended. NOTES: For higher voltage chips, see pages 20 and 21. 10 INVA X7/R Dielectric Capacitance Range Preferred Sizes are Shaded {L) Length (W) Width (1) Max. Thickness (t) Terminal Cap (pF) r 1805* 457 + 25 (180 + .010) 1.27 #25 (050 + .010) 1.27 (.050) 644.39 (.025 + .015) 50 100 a 1210 3.20 + .20 (126 + .008) 2.50 + .20 (098 + .008) 4.70 (067) 50 + 25 (020 + .010) 16 | 25 50 | 100 *IR and vapor phase soldering only recommended. NOTES: For higher voltage chips, see pages 20 and 21. C1 1808* 457 + 25 (180 + .010) 2.03 + .25 (080 + .010) 1.52 (060) 64 + 39 (.025 + .015) 25 50 100 am oO 1812* 4.50 + .30 (.177 + .012) 3.20 + .20 (126 + .008) 1.70 (067) 61% 36 (024 + .014) 50 100 LI 1825* 4.50 + 30 (177 012) 6.40 + .40 (.252 + .016) 1.70 (.067} 61 + 36 (024 + 014) 50 100 L S 2225" 5.72 + .25 (.225 + .010) 6.35 + 25 (.250 + .010) 1.70 (.067} 644 39 (025 + 015) 50 100