TOSHIBA SF1G53 TOSHIBA THYRISTOR SILICON PLANAR TYPE LOW POWER SWITCHING AND CONTROL APPLICATIONS # Radial Taping SF1G53 Unit in mm 10+ 0.2 ot? he e Repetitive Peak Off-State Voltage : V ee ee + DEM \ =400V Ae Repetitive Peak Reverse Voltage : VRRM Average On-State Current :Ip(ayy=1A | e Plastic Mold Type aa yP +f iat CO.5 MAXIMUM RATINGS (Ta = 25C) 1 3 CHARACTERISTIC SYMBOL | RATING | UNIT | [9428 | | | = re Tey Repetitive Peak Off-State Voltage a5, | 25 4 ae S41 0.5 +f, and Repetitive Peak Reverse yok 400 Vv = eee = on of, on Voltage (RaK =1kQ) 1279 1. CATHODE Non-Repetitive Peak Reverse al 2. ANODE Voltage (Non-Repetitive <5ms, VRSM 500 Vv 3. GATE =1k0, T;=0~125 RGK FE 0~ 125) JEDEC Average On-State Current I 1 (Full Sine Waveform Ta=37C) T(AV) RIAJ R.M.S On-State Current IT (RMS) 1.57 A TOSHIBA 2-10TiA Peak One Cycle Surge On-State I 8 (50Hz) A Weight ; 1.5 Current (Non-Repetitive) TSM 8.8 (60Hz) It Limit Value (t=1~10ms) It 0.32 As_ | (Note)Should be used with gate Peak Gate Power Dissipation PG@M 0.1 WwW resistance as follows, Average Gate Power Dissipation PG (AV) 0.01 Ww Peak Forward Gate Voltage VFGM 5 Vv ANQDE Peak Reverse Gate Voltage VRGM 5 Vv Peak Forward Gate Current Tom 100 mA GATE O Junction Temperature Tj 40~125 C ; RGK =1k0 Storage Temperature Range Tate 40~125 C or Less CATHODE QE1001EAA! due te their inherant electrical sansrtivit gue fo tnir innerent siectricar sensi @ TOSHIBA is continually working, to improve the quality and the reliability of its products. Nevertheless, semiconductor Bw fA is AAA Ars ran Pia ACTA rr aur It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual propert parties which may result from its use. No license is granted by impl property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. y and vulnerability ta oahyvercal stress Yo and vurneracouity fo prysica: stress. ication or otherwise under any intellectual or other rights of the third 1997-12-11 1/3 TOSHIBA SF1G53 ELECTRICAL CHARACTERISTICS (Ta =25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Repetitive Peak Off-State _ _ Current and Repetitive Peak DRM eM A anenies | | 200 | pA Reverse Current RRM GK aT Peak On-State Voltage VIM Ipy=2A 1.7 Vv Gate Trigger Voltage VoT _ _ _ 0.8 V Gate Trigger Current lor Vp=8V, RL =1000, RaK = 1k!) 200 | nA Gate Non-Trigger Voltage VGD Vp=6V, ReK=1kQ, Tce=125C | 0.2 Holding Current Iq RL =1000, Rex =1k0 3 mA Thermal Resistance RihG-a) |Junetion to Ambient 69 [C/W MARKING NUMBER SYMBOL MARK zz sae tt may ama ates amwariea - PRL L1IPrn OP Liga OP blo i ei | Ka Lot Number =o. Lo Example Month (Sterting omy BA : January 1998 KD Alphabet A 8B : February 1998 . _. 8L : December 1998 Year (tat Decimal Digit of the Current Year 1997-12-11 2/3 TOSHIBA SF1G53 ip oy 10 INSTANTANEOUS ON-STATE CURRENT 3 1 & 0.5 0.3 0.1 0 0.4 0.8 12 1.6 2.0 INSTANTANEOUS ON-STAGE VOLTAGE Uy (V) Voer(Te) Vor (Te=25C) (TYPICAL) 5 wD aw ft a & a ze B & a] 6 > 0 40 @ 40 80 120 CASE TEMPERATURE Te (C) Ta MAX. Ip(ay) 140 FULL SINE a WAVEFORM 4 126 a o f f rf J 8 100 o|__| |___|360 a. at oa ao eS a1 ag a As 36 CONDUCTION Ps ANGLE Qf 38 60 240 = & 180 58 40 120 sa xe aE 90 3 a=60" 360 0 0.5 1,0 15 20 2.5 AVERAGE ON-STATE CURRENT Ipay) (A) Igy (Tod /igy (les 25C) MAXIMUM ALLOWABLE AMBIENT TEMPERATURE Ta MAX. (CC) MAXIMUM ALLOWABLE AMBIENT TEMPERATURE Ta MAX. (C} ler (Te) Igy (Te=25C) (TYPICAL) -40 0 40 80 120 CASE TEMPERATURE Te (C) Ta MAX. It (ay) HALF SINE WAVEFORM 140 ee bo co i oF | 180 CONDUCTION ANGLE a e 2 oO oo oa a o 40 20/ a =30 0 0.5 10 16 2.0 2.5 AVERAGE ON-STATE CURRENT Ipcay) (A) Ta MAX. Ip(ay) 140 RECTANGULAR 129 WAVEFORM 100 el] jl at 2 80 CONDUCTION ANGLE a 60 4) 20 g=30 0 0.5 1.0 15 2.0 25 AVERAGE ON-STATE CURRENT Ipyayy) (A) 1997-12-11 3/3