N-Channel PowerTrench(R) MOSFET 80 V, 42 A, 3.9 m Features General Description Max rDS(on) = 3.9 m at VGS = 10 V, ID = 19 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Max rDS(on) = 5.5 m at VGS = 8 V, ID = 15.5 A Advanced Package and Silicon combination for low rDS(on) and high efficiency Next generation enhanced engineered for soft recovery body diode technology, Applications MSL1 robust package design OringFET / Load Switching 100% UIL tested DC-DC Conversion RoHS Compliant Bottom Top Pin 1 S D D D S S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S D Power 56 MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25 C -Continuous (Silicon limited) TC = 25 C -Continuous TA = 25 C PD TJ, TSTG Units V 20 V 42 122 (Note 1a) 19 (Note 3) 252 -Pulsed A 120 Single Pulse Avalanche Energy EAS Ratings 80 Power Dissipation TC = 25 C Power Dissipation TA = 25 C 104 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W C Thermal Characteristics RJC Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient 1.2 (Note 1a) 50 C/W Package Marking and Ordering Information Device Marking FDMS86300 Device FDMS86300 (c)2011 Fairchild Semiconductor Corporation FDMS86300 Rev.C Package Power 56 1 Reel Size 13 '' Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS86300 N-Channel PowerTrench(R) MOSFET August 2011 FDMS86300 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0 V BVDSS TJ Breakdown Voltage Temperature Coefficient ID = 250 A, referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 1 A IGSS Gate to Source Leakage Current VGS = 20 V, VDS = 0 V 100 nA 4.5 V 80 V 39 mV/C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 A VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 A, referenced to 25 C -11 VGS = 10 V, ID = 19 A 3.2 rDS(on) Static Drain to Source On Resistance VGS = 8 V, ID = 15.5 A 3.8 5.5 VGS = 10 V, ID = 19 A, TJ = 125 C 5.0 5.8 VDS = 10 V, ID = 19 A 60 gFS Forward Transconductance 2.5 3.4 mV/C 3.9 m S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 40 V, VGS = 0 V, f = 1 MHz 5325 7082 pF 957 1272 pF 26 63 pF 1.2 Switching Characteristics td(on) Turn-On Delay Time 31 50 tr Rise Time 43 ns td(off) Turn-Off Delay Time VDD = 40 V, ID = 19 A, VGS = 10 V, RGEN = 6 26 36 58 ns tf Fall Time 9 18 ns Qg Total Gate Charge VGS = 0 V to 10 V 72 86 nC Qg Total Gate Charge VGS = 0 V to 8 V 59 71 Qgs Gate to Source Charge Qgd Gate to Drain "Miller" Charge VDD = 40 V, ID = 19 A ns nC 28.2 nC 14.9 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.1 A VGS = 0 V, IS = 19 A IF = 19 A, di/dt = 100 A/s IF = 19 A, di/dt = 300 A/s (Note 2) (Note 2) 0.71 1.2 0.81 1.3 V 57 90 ns 50 80 nC 48 77 ns 103 165 nC Notes: 1. RJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50 C/W when mounted on a 1 in2 pad of 2 oz copper b) 125 C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. EAS of 252 mJ is based on starting TJ = 25 C, L = 0.3 mH, IAS = 41 A, VDD = 72 V, VGS = 10 V. (c)2011 Fairchild Semiconductor Corporation FDMS86300 Rev.C 2 www.fairchildsemi.com FDMS86300 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25 C unless otherwise noted 5 VGS = 10 V VGS = 8 V VGS = 6.5 V 90 VGS = 6 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 120 60 VGS = 5.5 V 30 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 VGS = 5.5 V 4 VGS = 6 V 3 VGS = 6.5 V 2 VGS = 8 V 1 0 5 0 30 60 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics ID = 19 A VGS = 10 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 120 12 1.6 IS, REVERSE DRAIN CURRENT (A) 90 TJ = 150 oC 60 oC 30 TJ = -55 oC 2 3 4 5 6 TJ = 125 oC 6 3 TJ = 25 oC 6 7 8 9 200 100 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 7 VGS = 0 V 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2011 Fairchild Semiconductor Corporation FDMS86300 Rev.C 10 Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX TJ = 25 9 VGS, GATE TO SOURCE VOLTAGE (V) 120 VDS = 5 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX ID = 19 A 0 5 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature ID, DRAIN CURRENT (A) 90 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 0 VGS = 10 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 3 1.2 www.fairchildsemi.com FDMS86300 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 10000 ID = 19 A Ciss VDD = 40 V 8 VDD = 30 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 50 V 6 4 1000 2 Coss 100 10 Crss f = 1 MHz VGS = 0 V 0 0 10 20 30 40 50 60 70 1 0.1 80 1 Figure 7. Gate Charge Characteristics 150 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) TJ = 25 oC TJ = 100 oC 10 TJ = 125 oC 120 VGS = 10 V 90 VGS = 8 V 60 30 o Limited by Package 1 0.01 0.1 1 10 100 0 25 500 50 RJC = 1.2 C/W 75 100 125 150 o TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 200 100 P(PK), PEAK TRANSIENT POWER (W) 1000 10 1 80 Figure 8. Capacitance vs Drain to Source Voltage 50 ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 1 ms 10 ms THIS AREA IS LIMITED BY rDS(on) 0.1 100 ms SINGLE PULSE TJ = MAX RATED 1s RJA = 125 oC/W 10 s TA = 25 oC 0.01 0.01 0.1 DC 1 10 100 500 TA = 25 oC 100 10 1 0.5 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area (c)2011 Fairchild Semiconductor Corporation FDMS86300 Rev.C SINGLE PULSE RJA = 125 oC/W Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS86300 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZJA 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA SINGLE PULSE o RJA = 125 C/W 0.001 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve (c)2011 Fairchild Semiconductor Corporation FDMS86300 Rev.C 5 www.fairchildsemi.com FDMS86300 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted FDMS86300 N-Channel PowerTrench(R) MOSFET Dimensional Outline and Pad Layout (c)2011 Fairchild Semiconductor Corporation FDMS86300 Rev.C 6 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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