August 2011
©2011 Fairchild Semiconductor Corporation
FDMS86300 Rev.C www.fairchildsemi.com
1
FDMS86300 N-Channel PowerTrench® MOSFET
FDMS86300
N-Channel PowerTrench® MOSFET
80 V, 42 A, 3.9 mΩ
Features
Max rDS(on) = 3.9 mΩ at VGS = 10 V, ID = 19 A
Max rDS(on) = 5.5 mΩ at VGS = 8 V, ID = 15.5 A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Next generation enhanced body diode technology,
engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
OringFET / Load Switching
DC-DC Conversion
Power 56 D
DDD
G
SSS
Pin 1
Bottom
Top
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage 80 V
VGS Gate to Source Voltage ±20 V
ID
Drain Current -Continuous (Package limited) TC = 25 °C 42
A
-Continuous (Silicon limited) TC = 25 °C 122
-Continuous TA = 25 °C (Note 1a) 19
-Pulsed 120
EAS Single Pulse Avalanche Energy (Note 3) 252 mJ
PDPower Dissipation TC = 25 °C 104 W
Power Dissipation TA = 25 °C (Note 1a) 2.5
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
RθJC Thermal Resistance, Junction to Case 1.2 °C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
FDMS86300 FDMS86300 Power 56 13 ’’ 12 mm 3000 units
FDMS86300 N-Channel PowerTrench® MOSFET
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©2011 Fairchild Semiconductor Cor poration
FDMS86300 Rev.C
Electrical Characteristics TJ = 25 °C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 80 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 250 μA, referenced to 25 °C 39 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 1 μA
IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2.5 3.4 4.5 V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = 250 μA, referenced to 25 °C -11 mV/°C
rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 19 A 3.2 3.9 mΩVGS = 8 V, ID = 15.5 A 3.8 5.5
VGS = 10 V, ID = 19 A, TJ = 125 °C 5.0 5.8
gFS Forward Transconductance VDS = 10 V, ID = 19 A 60 S
Ciss Input Capacitance VDS = 40 V, VGS = 0 V,
f = 1 MHz
5325 7082 pF
Coss Output Capacitance 957 1272 pF
Crss Reverse Transfer Capacitance 26 63 pF
RgGate Resistance 1.2 Ω
td(on) Turn-On Delay Time VDD = 40 V, ID = 19 A,
VGS = 10 V, RGEN = 6 Ω
31 50 ns
trRise Time 26 43 ns
td(off) Turn-Off Delay Time 36 58 ns
tfFall Time 918ns
QgTotal Gate Charge VGS = 0 V to 10 V VDD = 40 V,
ID = 19 A
72 86 nC
QgTotal Gate Charge VGS = 0 V to 8 V 59 71 nC
Qgs Gate to Source Charge 28.2 nC
Qgd Gate to Drain “Miller” Charge 14.9 nC
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.71 1.2 V
VGS = 0 V, IS = 19 A (Note 2) 0.81 1.3
trr Reverse Recovery Time IF = 19 A, di/dt = 100 A/μs 57 90 ns
Qrr Reverse Recovery Charge 50 80 nC
trr Reverse Recovery Time IF = 19 A, di/dt = 300 A/μs 48 77 ns
Qrr Reverse Recovery Charge 103 165 nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 i n. board of FR-4 material . RθJC is guaranteed by design while RθCA is determine d by
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 252 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 41 A, VDD = 72 V, VGS = 10 V.
a) 50 °C/W wh en mounted o n a
1 in2 pad of 2 oz copper 125 °C/W when mounted on a
minimum pad of 2 oz copper.
b)
FDMS86300 N-Channel PowerTrench® MOSFET
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©2011 Fairchild Semiconductor Corporation
FDMS86300 Rev.C
Typical Characteristics TJ = 25 °C unless otherwise noted
Figure 1.
012345
0
30
60
90
120
VGS = 6.5 V
VGS = 10 V
VGS = 5.5 V
VGS = 6 V
VGS = 8 V
PULSE DU RATION = 80 μs
DUTY CYCLE = 0.5% MA X
ID, DRAIN CURRENT (A)
VDS, DRAIN TO S OURC E VOLTAGE (V)
On-Region Characteristics Figure 2.
0306090120
0
1
2
3
4
5
VGS = 6.5 V
VGS = 5.5 V
PULSE D U RATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS = 8 V
VGS = 6 V
VGS = 10 V
Normalized On-Resistance
vs Drain Current and Gate Voltage
Figure 3. Normalized On- Resistance
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID = 19 A
VGS = 10 V
NORMALIZED
DRAIN TO SO UR CE ON-RESI ST A NCE
TJ, JUNCTION TEMPERATURE (oC)
vs Junction Te mperature Figure 4.
5678910
0
3
6
9
12
TJ = 125 oC
ID = 19 A
TJ = 25 oC
VGS, G ATE TO SOURCE VO LTA G E (V)
rDS(on), DRAIN T O
SOURCE ON-RESISTANCE (mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MA X
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
234567
0
30
60
90
120
TJ = 25 oC
TJ = 150 oC
VDS = 5 V
PULSE DU R ATION = 80 μs
DUTY CYCLE = 0.5% MA X
TJ = -55 oC
ID, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
200
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
VGS = 0 V
IS, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
Forward Voltage vs Source Current
FDMS86300 N-Channel PowerTrench® MOSFET
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©2011 Fairchild Semiconductor Corporation
FDMS86300 Rev.C
Figure 7.
0 1020304050607080
0
2
4
6
8
10
ID = 19 A
VDD = 30 V
VDD = 40 V
VGS, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 50 V
Gate Charge Characteristics Figure 8.
0.1 1 10 80
1
10
100
1000
10000
f = 1 M H z
VGS = 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
Capacitance vs Drain
to Source Voltage
Figure 9.
0.01 0.1 1 10 100 500
1
10
50
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
IAS, AVALANCHE CURRENT (A)
Uncl a mped I nduc t ive
Switching Capability Figure 10.
25 50 75 100 125 150
0
30
60
90
120
150
Limited by Package
VGS = 8 V
RθJC = 1.2 oC/W
VGS = 10 V
ID, DRAIN CURRENT (A)
TC, CASE TEMPERA TURE (oC)
Maximum Continuous Drain
Current vs Case Temperature
Figure 11.
0.01 0.1 1 10 100 500
0.01
0.1
1
10
100
200
10 s
10 m s
DC
1 s
100 ms
1 ms
ID, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJA = 12 5 o C/W
TA = 25 oC
Forward Bias Safe
Operating Area Figure 12. Single Pulse Maximum
Power Dissipation
10-3 10-2 10-1 110
100 1000
0.5
1
10
100
1000 SINGLE PULSE
RθJA = 12 5 oC/W
TA = 25 oC
P(PK), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMS86300 N-Channel PowerTrench® MOSFET
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©2011 Fairchild Semiconductor Corporation
FDMS86300 Rev.C
Figure 13. Junction-to-Ambient Transient Thermal Respon se Curve
10-3 10-2 10-1 110
100 1000
0.001
0.01
0.1
1
2
SINGLE PULSE
RθJA = 125 oC/W
DUTY CYC L E-D ESCENDING O RDER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.0 5
0.0 2
0.0 1
PDM
t1t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMS86300 N-Channel PowerTrench® MOSFET
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©2011 Fairchild Semiconductor Cor poration
FDMS86300 Rev.C
Dimensional Outline and Pad Layout
7www.fairchildsemi.com
FDMS86300 N-Channel PowerTrench® MOSFET
©2011 Fairchild Semiconductor Corporation
FDMS86300 Rev.C
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tm
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tm
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Rev. I55
