VS-SD1100C..C Series
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Standard Recovery Diodes
(Hockey PUK Version), 1400 A
FEATURES
• Wide current range
• High voltage ratings up to 3200 V
• High surge current capabilities
• Diffused junction
• Hockey PUK version
• Case style B-43
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Converters
• Power supplies
• Machine tool controls
• High power drives
• Medium traction applications
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
IF(AV) 1400 A
Package B-43
Circuit configuration Single diode
B-43
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS SD1100C..C UNITS
04 to 20 25 to 32
IF(AV)
1400 1100 A
Ths 55 55 °C
IF(RMS)
2500 2000 A
Ths 25 25 °C
IFSM
50 Hz 13 000 10 500 A
60 Hz 13 600 11 000
I2t50 Hz 846 551 kA2s
60 Hz 772 503
VRRM Range 400 to 2000 2500 to 3200 V
TJ- 40 to 180 - 40 to 150 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK REVERSE
VOLTAGE
V
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
VS-SD1100C..C
04 400 500
35
08 800 900
12 1200 1300
16 1600 1700
20 2000 2100
25 2500 2600
30 3000 3100
32 3200 3300
VS-SD1100C..C Series
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Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS
SD1100C..C
UNITS
04 to 20 25 to 32
Maximum average forward current
at heatsink temperature IF(AV)
180° conduction, half sine wave
Double side (single side) cooled
1400 (795) 1100 (550) A
55 (85) 55 (85) °C
Maximum RMS forward current IF(RMS) 25 °C heatsink temperature double side cooled 2500 2000
A
Maximum peak, one-cycle forward,
non-repetitive current IFSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ
maximum
13 000 10 500
t = 8.3 ms 13 600 11 000
t = 10 ms 100 % VRRM
reapplied
10 930 8830
t = 8.3 ms 11 450 9250
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
846 551
kA2s
t = 8.3 ms 772 503
t = 10 ms 100 % VRRM
reapplied
598 390
t = 8.3 ms 546 356
Maximum I2t for fusing I2tt = 0.1 to 10 ms, no voltage reapplied 8460 5510 kA2s
Low level value of threshold voltage VF(TO)1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 0.78 0.84 V
High level value of threshold voltage VF(TO)2 (I > x IF(AV)), TJ = TJ maximum 0.94 0.88
Low level value of forward
slope resistance rf1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 0.35 0.40
m
High level value of forward
slope resistance rf2 (I > x IF(AV)), TJ = TJ maximum 0.26 0.38
Maximum forward voltage drop VFM Ipk = 1500 A, TJ = TJ maximum
tp = 10 ms sinusoidal wave 1.31 1.44 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS
SD1100C..C
UNITS
04 to 20 25 to 32
Maximum junction operating
temperature range TJ- 40 to 180 - 40 to 150 °C
Maximum storage temperature range TStg - 55 to 200
Maximum thermal resistance,
junction to heatsink RthJ-hs
DC operation single side cooled 0.076 K/W
DC operation double side cooled 0.038
Mounting force, ± 10 % 9800 (1000) N (kg)
Approximate weight 83 g
Case style See dimensions - link at the end of datasheet B-43
RthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.007 0.007 0.005 0.005
TJ = TJ maximum K/W
120° 0.008 0.008 0.008 0.008
90° 0.010 0.010 0.011 0.011
60° 0.015 0.015 0.016 0.016
30° 0.026 0.026 0.026 0.026
VS-SD1100C..C Series
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Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - Current Ratings Characteristics
Fig. 6 - Current Ratings Characteristics
40
60
80
100
120
140
160
180
0 200 400 600 800 1000
30° 60° 90°
120°
180°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Angle
(Single Side Cooled)
R (D C ) = 0.0 76 K /W
th J- hs
SD1100C..C Series (400V to 2000V)
20
40
60
80
100
120
140
160
180
040080012001600
30° 60°
90°
180° DC
120°
Cond uction Period
( S in g le Sid e C o o le d )
R ( D C ) = 0 .0 76 K /W
thJ-hs
Maxim um Allowable Heatsink Tem perature (°C)
Average Forward Current (A)
SD 1100C..C Series (400V to 2000 V)
20
40
60
80
100
120
140
160
180
0400800120016002000
30°
60°
90°
120°
180°
Average Forward Current (A)
Maximum Allowable Heatsink Tem perature (°C)
Cond uction Angle
(D ouble Side C ooled)
R (D C ) = 0.038 K/W
th J-hs
SD 1100C ..C Series (400V to 2000V )
0
20
40
60
80
100
120
140
160
180
0 500 1000 1500 2000 2500 3000
30°
60°
90°
180°
DC
120°
Average Forward Current (A)
Maxim um Allowable Heatsink Tem perature (°C)
Cond uction Period
(Double Side Cooled)
R (D C ) = 0 .03 8 K/W
th J- hs
SD 1100C ..C Series (400V to 2000V )
40
50
60
70
80
90
100
110
120
130
140
150
0 200 400 600 800
30° 60° 90° 120° 180°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Angle
SD1100C..C Series (2500V to 3200V )
(Single Side Cooled)
R (DC) = 0.076 K/W
thJ- hs
20
30
40
50
60
70
80
90
100
110
120
130
140
150
0 200 400 600 800 1000 1200 1400
30° 60°
90°
180° DC
120°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Period
SD1100C..C Series (2500V to 3200V)
(Single Side Cooled)
R (DC) = 0.076 K/W
th J-hs
VS-SD1100C..C Series
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Fig. 7 - Current Ratings Characteristics
Fig. 8 - Current Ratings Characteristics
Fig. 9 - Forward Power Loss Characteristics
Fig. 10 - Forward Power Loss Characteristics
Fig. 11 - Forward Power Loss Characteristics
Fig. 12 - Forward Power Loss Characteristics
20
30
40
50
60
70
80
90
100
110
120
130
140
150
0 200 400 600 800 1000 1200 1400
30° 60° 90° 120° 180°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Angle
SD1100C..C Series (2500V to 3200V)
(Double Side Cooled )
R (DC) = 0.038 K/W
thJ-h s
20
30
40
50
60
70
80
90
100
110
120
130
140
150
0 400 800 1200 1600 2000 2400
30°
60°
90°
180°
DC
120°
Avera ge Forward Curren t (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Period
SD1100C..C Series (2500V to 3200V)
(Double Side Cooled)
R (DC) = 0.038 K/W
thJ-h s
0
500
1000
1500
2000
2500
3000
3500
040080012001600
180°
120°
90°
60°
30° RMS Limit
Maximum Average Forward Power Loss (W)
Average Forward Current (A)
Conduction Angle
SD1100C..C Series
(400V to 2000V)
T = 180°C
J
0
500
1000
1500
2000
2500
3000
3500
4000
4500
0 500 1000 1500 2000 2500 3000
DC
180°
120°
90°
60°
30°
RMS Lim it
Conduction Period
Maximum Average Forward Power Loss (W )
Average Forward Current (A)
SD1100C..C Series
(400V to 2000V)
T = 180°C
J
0
500
1000
1500
2000
2500
3000
0 200 400 600 800 1000 1200 1400
180°
120°
90°
60°
30° RMS Limit
Conduction Angle
Maximum A verage Forward Power Loss (W)
Average Forw ard Current (A)
SD1100C..C Series
(2500V to 3200V)
T = 150°C
J
0
500
1000
1500
2000
2500
3000
3500
0 400 800 1200160020002400
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Maximum Average Forward Power Loss (W)
Average Forward Current (A)
SD1100C..C Series
(2500V to 3200V)
T = 150°C
J
VS-SD1100C..C Series
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Fig. 13 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 14 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 15 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 16 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 17 - Forward Voltage Drop Characteristics
Fig. 18 - Forward Voltage Drop Characteristics
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
001011
N um b er O f E q u a l A m p l itud e H a lf C y cl e C u rre nt Pulse s (N )
Peak Half Sine Wave Forward Current (A)
In it ia l T = 1 8 0 ° C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Ra ted V A p p lied Fo llow in g Surg e .
RRM
SD1 100C..C Serie s
(400V to 200 0V)
3000
4000
5000
6000
7000
8000
9000
10000
001011
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave Forward Current (A)
Initial T = 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
SD 1100 C..C Ser ies
(2500V to 3200V)
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
3000
4000
5000
6000
7000
8000
9000
10000
11000
0.01 0.1 1
Pulse Train Duration (s)
Peak Half Sine Wave Forward Current (A)
Initial T = 150 °C
No Voltage Reapplied
Rated V Reapplied
J
RRM
Versus Pulse Train Duration.
SD1100C..C Series
(2500V to 3200V)
M aximum Non Repet itive Surge Current
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5 4
T = 25°C
J
Instan ta neous Forward Voltage (V)
Instantaneous Forw ard Current (A)
T = 180°C
J
SD1100C..C Series
(400V to 2000V)
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
T = 25°C
J
In stantan eous Forward Voltage (V)
In stantaneous Forw ard Current (A)
T = 150°C
J
SD 1100 C..C Series
(2500V to 3200V )
VS-SD1100C..C Series
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Fig. 19 - Thermal Impedance ZthJ-hs Characteristics
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95249
0.001
0.01
0.1
0111.010.0100.0
Sq u a re W ave Pulse D uration (s)
th J - h s
Transien t Therm al Im pedance Z (K/W )
Stea dy State V a lue
R = 0 .076 K/W
(Single Side C ooled)
R = 0 .038 K/W
(Double Side C ooled)
(D C O peration)
thJ-hs
thJ-hs
SD1 100C..C Series
1
- Diode
- Vishay Semiconductors product
2
- Essential part number
3
- 0 = Standard recovery
4
- C = Ceramic PUK
5
- Voltage code x 100 = V
RRM
(see Voltage Ratings table)
6
7
- C = PUK case B-43
Device code
51 32 4 6 7
SDVS- 110 0 C 32 C
Document Number: 95249 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 26-Nov-07 1
B-43
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
42 (1.65) DIA. MAX.
40.5 (1.59) DIA. MAX.
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see Thermal and Mechanical Specifications)
3.5 (0.14) DIA. NOM. x
1.8 (0.07) deep MIN. both ends
0.8 (0.03) MIN.
both ends
25.3 (1) DIA. MAX.
2 places
14.4 (0.57)
15.4 (0.61)
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Revision: 13-Jun-16 1Document Number: 91000
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