C106B2
C106D2
C106M2
SENSITIVE GATE
SILICON CONTROLLED RECTIFIER
4 AMP, 200 THRU 600 VOLTS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR C106B2 series
types are 4.0A, PNPN sensitive gate triggering silicon
controlled rectifiers with voltages ranging from 200V
to 600V. These devices are designed for applications
such as temperature, light and speed control, and
remote warning and triggering applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL C106B2 C106D2 C106M2 UNITS
Peak Repetitive Off-State Voltage VDRM, VRRM 200 400 600 V
RMS On-State Current (TC=85°C) IT(RMS) 4.0 A
Peak One Cycle Surge Current, t=8.3ms ITSM 20 A
I2t Value for Fusing I2t 1.65 A2s
Peak Gate Power Dissipation (TC=80°C) PGM 0.5 W
Average Gate Power Dissipation (TC=80°C) PG(AV) 0.1 W
Peak Forward Gate Current (TC=80°C) IGFM 0.2 A
Operating Junction Temperature TJ -40 to +110 °C
Storage Temperature Tstg -40 to +150 °C
Thermal Resistance ΘJC 7.5 °C/W
Thermal Resistance ΘJA 80 °C/W
ELECTRICAL CHARACTERISTICS: (TJ=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ 10 μA
IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ, TJ=110°C 100 μA
VTM I
T=4.0A 2.2 V
IGT V
D=6.0V, RL=100Ω 200 μA
IGT V
D=6.0V, RL=100Ω, TJ=–40°C 500 μA
VGT V
D=6.0V, RL=100Ω 0.4 0.8 V
VGT V
D=6.0V, RL=100Ω, TJ=–40°C 0.5 1.0 V
IH V
D=12V 3.0 mA
IH V
D=12V, TJ=–40°C 6.0 mA
IH V
D=12V, TJ=110°C 2.0 mA
IL V
D=12V 5.0 mA
IL V
D=12V, TJ=–40°C 7.0 mA
dv/dt VD=Rated VDRM, RGK=1.0KΩ, TJ=110°C 8.0 V/μs
TO-202-2 CASE
R1 (23-April 2012)
www.centralsemi.com
C106B2
C106D2
C106M2
SENSITIVE GATE
SILICON CONTROLLED RECTIFIER
4 AMP, 200 THRU 600 VOLTS
LEAD CODE:
1) Cathode
2) Anode
3) Gate
Tab is common to pin 2
MARKING:
FULL PART NUMBER
TO-202-2 CASE - MECHANICAL OUTLINE
www.centralsemi.com
R1 (23-April 2012)
