BAT54/A/C/S
BAT54, Rev. C
2001 Fairchild Semiconductor Corporation
Schottky Diodes
BAT54/A/C/S
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
Parameter
Value
Units
VRRM Maximum Repe titive Reverse Volta ge 30 V
IF(AV) Average Rectified Forw ard Current 200 mA
IFSM Non-repetitive Peak Forward Surge Curren t
Pulse width = 1.0 second 600 mA
Tstg Storage Temperature Range -55 to +150 °C
TJ Operating Junctio n Temperature 150 °C
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
PD Power Dissipation 290 mW
RθJA Thermal Resistance, Junction to Ambient 430 °C/W
Symbol
Parameter
Test Conditions
Min
Max
Units
VR Breakdown Voltage IR = 10 µA 30 V
VF Forward Voltage IF = 0.1 mA
IF = 1 mA
IF = 10 mA
IF = 30 mA
IF = 100 mA
240
320
400
500
1.0
mV
mV
mV
mV
V
IR Reverse Current VR =25 V 2 µA
CT Total Capacitance VR = 1V, f = 1.0 MHz 10 pf
trr Reverse Recovery Time IF = IR = 10 mA, IRR = 1.0 mA,
RL = 100Ω 5.0 ns
MARKING
BAT54 = L4P BAT54A = L42
BAT54C = L43 BAT54S = L44
12
3
L4P
3
1
2
SOT-23
Connection DiagramS
BAT54
BAT54C 1
3
21 3
3BAT54A
BAT54S
22
3
11
2NC
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This datasheet contains the design specifications for
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supplementary data will be published at a later date.
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