MA4L & MADL- Series Silicon Limiter Diodes Rev. V24 Features Low Insertion Loss and Noise Figure High Peak and Average Operating Power Various P1dB Compression Powers Au Doped Devices for Lower Recovery Time Non-Au doped devices for Lower Flat Leakage Power Proven Reliable, Silicon Nitride Passivation RoHS Compliant Available Packages1 30 31,32 120 1056 Description The MA4L and MADL Series are silicon PIN limiter diodes with small and medium I-region lengths which are specifically designed for high signal applications. The devices are designed to provide low insertion loss, at zero bias, as well as low flat leakage power with fast signal response/recovery times. Parts are available as discrete die or assembled into a variety of surface mount or ceramic pill packages. See the Available Case Style table for the specific ceramic package styles and their availability for individual part numbers. 186 137 1088 Chip Chip Chip with Flying Leads 134 1421 1428 1387 1388 Applications The MA4L and MADL Series of PIN limiter diodes are designed for use in passive limiter control circuits to protect sensitive receiver components such as low noise amplifiers (LNA), detectors, and mixers covering the 10 MHz to 18 GHz frequency range. 1. Packages not to size, dimensions can be found on the MACOM website. Chip Outlines2 ODS134 ODS1421 ODS1428 A A B ODS Dimension mils mm 134, 1421 , 1428 A (squared) 15 2 0.381 0.51 B 7 12 0.178 0.025 2. For the MADL-000301-01340W, MADL-000301-13870G, MA4L401-134 and MADL-000401-13870G, "B" dimension, is 10 1 mils. 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0003896 MA4L & MADL- Series Silicon Limiter Diodes Rev. V24 Electrical Specifications: TA = 25C Gold Doped Die VB3 (10 A) Part Number Min./Max. CJ @ 10 V4 ( 1 MHz) Typ. Max. Carrier CJ RS CW Lifetime5 I-Region Contact 5 @ 0 V @ 10 mA Thermal I = +10 mA Thickness Diameter ( 1 MHz) (500 MHz) F Resistance5 IR = -6 mA Typ. Max. Nominal Characteristics V pF pF pF Ohms ns m mils C/W MA4L011-134 15/35 0.13 0.18 0.18 2.10 10 2 1.2 35 MA4L021-134 20/35 0.11 0.16 0.20 2.10 10 2 1.2 35 MA4L022-134 20/35 0.12 0.17 0.19 2.00 10 2 1.2 35 MA4L031-134 30/50 0.14 0.20 0.21 2.00 20 3 1.4 34 MA4L032-134 30/50 0.12 0.18 0.20 2.50 15 3 1.5 34 MA4L062-134 60/75 0.08 0.11 0.15 2.50 10 4 1.5 33 MADL-011009-01340W 20/35 0.15 0.20 0.23 1.50 10 2 3.0 35 MADL-011010-01340W 30/50 0.15 0.21 0.24 1.50 15 3 3.0 34 MADL-011011-01340W 60/75 0.10 0.13 0.17 2.30 10 4 3.0 33 MADL-011021-14210G 20/35 0.18 0.23 0.24 2.00 10 2 2.6 x 5.8 35 Non Gold Doped Die VB3 (10 A) Part Number CJ @ 10 V4 ( 1 MHz) Carrier CJ RS CW Lifetime5 I-Region Contact 5 @ 0 V @ 10 mA Thermal I = +10 mA Thickness Diameter ( 1 MHz) (500 MHz) F Resistance5 IR = -6 mA Min./Max. Typ. Max. Typ. Max. Nominal Characteristics V pF pF pF Ohms ns m mils C/W MA4L101-134 100/175 0.07 0.11 0.15 2.00 90 13 3.5 25 MA4L401-134 250/300 0.19 0.22 0.25 1.20 800 25 4.5 16 MADL-000301-01340W 200/300 0.11 0.16 0.20 1.50 200 20 3.0 39 MADL-011052-14280W 20/40 0.16 0.19 0.21 2.0 23 2 2.6 x 5.8 36 MADL-011054-01340W 60/80 0.11 0.15 0.16 1.6 74 4 1.1 38 3. Maximum breakdown voltage is sample tested and guaranteed by design. Exceeding this maximum V B value may damage the device. 4. Junction capacitance is measured at 1 MHz @ -10 V reverse voltage. CJ10 @ 1 MHz represents the microwave CJ @ frequency >50 MHz at 0 V. 5. Test performed with the chip bonded into a ceramic pill package. For thermal resistance package is mounted to an infinite heatsink. Chip only CW value is approximately 2C/W lower. 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0003896 MA4L & MADL- Series Silicon Limiter Diodes Rev. V24 Nominal High Signal Performance6: Freq. = 9.4 GHz, TA = 25C, Pulse Width = 1 s, Duty Cycle = 0.1% Gold Doped Die Incident Peak Power Part Number 1 dB Limiting 10 dB Limiting 15 dB Limiting Recovery Time Incident Peak Power CW Input Power 3 dB Peak Power = 50 W Maximum Maximum ns Watts Watts MA4L011-134 7 dBm 30 40 10 80 2 MA4L021-134 8 31 41 15 90 3 MA4L022-134 8 31 41 15 90 3 MA4L031-134 10 33 43 25 125 4 MA4L032-134 11 34 44 25 125 4 MA4L062-134 15 38 50 75 200 5 MADL-011009-01340W 8 31 41 10 90 3 MADL-011010-01340W 11 34 44 25 125 4 MADL-011011-01340W 15 38 50 75 200 5 MADL-011021-14210G 8 31 41 10 90 3 Recovery Time Incident Peak Power CW Input Power 3 dB Peak Power = 50 W Maximum Maximum ns dBm dBm Non Gold Doped Die Incident Peak Power Part Number 1 dB Limiting 10 dB Limiting 15 dB Limiting dBm MA4L101-134 20 45 53 100 54 38.0 MA4L401-134 30 52 60 250 60 40.0 MADL-000301-01340W 23 46 57 50 57 38.5 MADL-011052-14280W 7 28 39 50 50 36.0 MADL-011054-01340W 13 37 48 100 53 38.0 6. Measured in a single shunt diode (die) configuration attached directly to the gold plated RF ground of a 50 , SMA connectorized, test fixture using 1 mil thick conductive silver epoxy . Chip anode contact is thermo-compression wire bonded using a 1 mil. diameter gold wire onto a 7.2 mil thick Rogers 5880 Duroid microstrip trace. A shunt coil provides the DC return. 3 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0003896 MA4L & MADL- Series Silicon Limiter Diodes Rev. V24 Absolute Maximum Ratings7 TA = +25C Parameter Absolute Maximum Forward Current 100 mA RF Peak & CW Incident Power Junction Temperature Per Performance Table 8 +175C Operating Temperature -55C to +125C Storage Temperature -55C to +150C Mounting Temperature +320C for 10 sec. 7. Exceeding any one or combination of these limits may cause permanent damage to this device. 8. Maintaining diode junction +175C will ensure MTBF >1 E+6 hrs for silicon devices. Typical High Signal Peak Power Performance for a Single Shunt in a 50 Circuit Frequency = 9.4 GHz, Pulse Width = 1 s, Duty Cycle = 0.1% 45 MA4L011-134, MA4L021-134, MA4L022-134, MADL-011009-01340W, MADL-011021-14210G 40 MA4L031-134, MA4L032-134, MADL-011010-0134W MA4L062-134, MADL-011011-01340W 35 Output Power (dBm) MA4L101-134 30 MA4L401-134 25 20 15 10 0 dB Loss Line 5 10 dB Loss Line 20 dB Loss Line 30 dB Loss Line 0 0 10 20 30 40 50 Input Power (dBm) 4 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0003896 MA4L & MADL- Series Silicon Limiter Diodes Rev. V24 Application Circuits Typical 60 dBm Peak Power, 1 s P.W., 0.1% Duty Cycle, 20 dBm Flat Leakage Limiter Circuit Transmission Line: 90 @ Fo Transmission Line: 90 @ Fo RF Input RF Output MA4L101-134 MA4L401-134 MA4L032-134 Coil: DC Return Typical 50 dBm Peak Power, 1 s P.W., 0.1% Duty Cycle, 20 dBm Flat Leakage Limiter Circuit Transmission Line: 90 @ Fo RF Input RF Output MA4L022-134 MA4L032-134 Coil: DC Return 5 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0003896 MA4L & MADL- Series Silicon Limiter Diodes Rev. V24 Notes for Specification and Nominal High Signal Performance Tables: Maximum Series Resistance: RS is measured at 500 MHz in the ODS-30 package and is equivalent to the total diode resistance: RS = RJ (Chip Junction Resistance) + RO (Package Ohmic Resistance). Maximum High Signal Performance: Test freq.= 9.4 GHz, RF pulse width = 1 s, Duty Cycle = 0.1%. Measured with a single shunt diode (die) attached directly to the gold plated RF housing ground with 1 mil thick conductive silver epoxy in a 50 , SMA, connectorized test fixture. Chip anode contact is thermo-compression wire bonded using a 1 mil. diameter gold wire onto a 7.2 mil thick Rogers 5880 Duroid microstrip trace. A shunt coil provides the DC return and DC blocks are on the RF Input and Output. Maximum CW Incident Power: Measured in a 50 , SMA, connectorized housing @ 4 GHz utilizing a TWT amplifier and the same single diode assembly configuration as stated above. Die Handling and Mounting Information Handling: All semiconductor chips should be handled with care in order to avoid damage or contamination from particulates, salts, and skin oils. For individual die, the use of plastic tipped tweezers or vacuum pick up tools is strongly recommended. Bulk handling should ensure that abrasion and mechanical shock are minimized. Die Attach: The die have Ti-Pt-Au back and anode metal, with a final gold thickness of 1 m. Die can be mounted with a gold-tin, eutectic solder perform or conductive silver epoxy. The metal RF and DC ground plane mounting surface must be free of contamination and should have a surface flatness of < 2 mils. Eutectic Die Attachment Using Hot Gas Die Bonder: An 80/20, gold/tin eutectic solder perform is recommended with a work surface temperature of 255C and a tool tip temperature of 220C. When the hot gas is applied, the temperature at the tool tip should be approximately 290C. The chip should not be exposed to a temperatures in excess of 320C for more than 10 seconds. Eutectic Die Attachment Using Reflow Oven: Refer to Application Note M538, "Surface Mounting Instructions". Epoxy Die Attachment: A thin, controlled amount of electrically conductive silver epoxy should be applied, approximately 1-2 mils thick to minimize ohmic and thermal resistances. A small epoxy fillet should be visible around the outer perimeter of the chip after placement to ensure full area coverage. Cure the conductive silver epoxy per the manufacturer's schedule, typically 150C for 1 hour. Wire Bonding: The chip's top contact (anode) metallization layer is comprised of Ti/Pt/Au with a final gold thickness of 1 m. Thermo-compression wedge bonding using a 0.7 or 1 mil diameter gold wire is recommended. The heat stage temperature should be set to approximately 200C with a tool tip temperature of 125C and a force of 18 to 40 grams. Use of ultrasonic energy is not advised but if necessary should be adjusted to the minimum setting required to achieve a good bond. Excessive energy or force applied to the top contact will cause the metallization to dislodge and lift off. Automatic ball bonding may also be used. See Application Note M541, "Bonding and Handling Procedures for Chip Diode Devices" for more detailed handling and assembly information. 6 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0003896 MA4L & MADL- Series Silicon Limiter Diodes Rev. V24 Part Numbering and Ordering Information When ordering : Use the base part number followed by a dash plus the desired package style suffix or base part only as defined in Table I "Available Case Styles" below. For example: The MA4L011 in the 186 style package becomes MA4L011-186 or for just the chip MA4L011-134. Table I Available Case Styles Available Package Styles9 Base Part MA4L011 30, 31, 32, 134 (chip), 137,186, 1056, 1088 MA4L021 31, 120, 134 (chip), 1056 MA4L022 30, 32, 120, 134 (chip), 137, 186, 1056 MA4L031 31, 134 (chip), 186, 1056 MA4L032 31, 32, 134 (chip), 186, 1056 MA4L062-134 Base part (134 chip) MA4L101 30, 134 (chip), 186 MA4L301 Base Part (MADL-000301-01340W) 31, 1056 MA4L401 30, 31, 120,134 (chip), 1056, MADL-000401-01320G for die in Gel-pack MADL-000011-13880G Base part (MA4L011-134 chip with flying leads) MADL-000031-13880G Base part (MA4L031-134 chip with flying leads) MADL-000032-003000 Base part (MA4L032 chip in 30 package) MADL-000062-105600 Base part (MA4L062 chip in 1056 package) MADL-000062-13880G Base part (MA4L062-134 chip with flying leads) MADL-000101-13880G Base part (MA4L101-134 chip with flying leads) MADL-000301-01340W Base part (134 chip) MADL-000301-13870G Base part (MADL-000301-01340W chip with flying leads) MADL-000401-13870G Base part (MA4L401-134 chip with flying leads) MADL-011009-01340W Base part (134 chip) MADL-011010-01340W Base part (134 chip), In Waffle pack, MADL-011010-01340G for Gel pack MADL-011011-01340W Base part (134 chip) In Waffle pack, MADL-011011-01340G for Gel pack MADL-011021-14210G Chip with rectangular contact (MADL-011021-1421WR wafer on ring frame) MADL-011052-14280W Chip with rectangular contact MADL-011054-01340W Base part (134 chip) 9. See Table 2 Associated Package Parasitics. 7 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0003896 MA4L & MADL- Series Silicon Limiter Diodes Rev. V24 Table 2 Associated Package Parasitics Nominal 30 Package Style Package Description 30 CPKG pF LS nH Ceramic Pill 0.18 0.60 31 Ceramic Pill 0.18 0.60 32 Ceramic Pill 0.30 0.40 120 Ceramic Pill 0.13 0.40 134 Chip -- -- 137 Epoxy Encapsulated Ceramic Surface Mount with Leads 0.14 0.70 186 Ceramic Surface Mount with Leads 0.15 0.70 1056 Ceramic Surface Mount with Wrap Around Contacts 0.20 0.70 1088 Epoxy Encapsulated Ceramic Surface Mount with Leads 0.12 0.70 1387 Chip with Flying Leads -- -- 1388 Chip with Flying Leads -- -- 1421 Chip with Rectangular Contact -- -- 1428 Chip with Rectangular Contact and BCB overlay -- -- 120 31,32 1056 137 186 1088 Chip Chip Chip with Flying Leads 134 1421 1428 1387 1388 8 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0003896 MA4L & MADL- Series Silicon Limiter Diodes Rev. V24 MACOM Technology Solutions Inc. All rights reserved. Information in this document is provided in connection with MACOM Technology Solutions Inc ("MACOM") products. These materials are provided by MACOM as a service to its customers and may be used for informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM assumes no responsibility for errors or omissions in these materials. MACOM may make changes to specifications and product descriptions at any time, without notice. MACOM makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions. 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MACOM customers using or selling MACOM products for use in such applications do so at their own risk and agree to fully indemnify MACOM for any damages resulting from such improper use or sale. 9 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0003896