Silicon Limiter Diodes
Rev. V24
MA4L & MADL- Series
1
1
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Features
Low Insertion Loss and Noise Figure
High Peak and Average Operating Power
Various P1dB Compression Powers
Au Doped Devices for Lower Recovery Time
Non-Au doped devices for Lower Flat Leakage
Power
Proven Reliable, Silicon Nitride Passivation
RoHS Compliant
Description
The MA4L and MADL Series are silicon PIN limiter
diodes with small and medium I-region lengths
which are specifically designed for high signal
applications. The devices are designed to provide
low insertion loss, at zero bias, as well as low flat
leakage power with fast signal response/recovery
times. Parts are available as discrete die or
assembled into a variety of surface mount or
ceramic pill packages. See the Available Case Style
table for the specific ceramic package styles and
their availability for individual part numbers.
Applications
The MA4L and MADL Series of PIN limiter diodes
are designed for use in passive limiter control
circuits to protect sensitive receiver components
such as low noise amplifiers (LNA), detectors, and
mixers covering the 10 MHz to 18 GHz frequency
range. Chip Outlines2
2. For the MADL-000301-01340W, MADL-000301-13870G,
MA4L401-134 and MADL-000401-13870G, “B” dimension, is
10 ±1 mils.
ODS Dimension mils mm
134, 1421 ,
1428
A (squared) 15 ±2 0.381 ±0.51
B 7 ±12 0.178 ±0.025
1. Packages not to size, dimensions can be found on the
MACOM website.
31,32
137
1056
30
134
Chip
120
186 1088
1387
1388
Chip with
Flying Leads
1421
1428
Available Packages1
B
Chip
A
ODS134 ODS1421
ODS1428
A
Silicon Limiter Diodes
Rev. V24
MA4L & MADL- Series
2
2
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Gold Doped Die
Part Number
VB3
(10 µA)
CJ
@ 10 V4
( 1 MHz)
CJ
@ 0 V
( 1 MHz)
RS
@ 10 mA5
(500 MHz)
Carrier
Lifetime5
IF = +10 mA
IR = -6 mA
I-Region
Thickness
Contact
Diameter
CW
Thermal
Resistance5
Min./Max. Typ. Max. Typ. Max. Nominal Characteristics
V pF pF pF Ohms ns µm mils °C/W
MA4L011-134 15/35 0.13 0.18 0.18 2.10 10 2 1.2 35
MA4L021-134 20/35 0.11 0.16 0.20 2.10 10 2 1.2 35
MA4L022-134 20/35 0.12 0.17 0.19 2.00 10 2 1.2 35
MA4L031-134 30/50 0.14 0.20 0.21 2.00 20 3 1.4 34
MA4L032-134 30/50 0.12 0.18 0.20 2.50 15 3 1.5 34
MA4L062-134 60/75 0.08 0.11 0.15 2.50 10 4 1.5 33
MADL-011009-01340W 20/35 0.15 0.20 0.23 1.50 10 2 3.0 35
MADL-011010-01340W 30/50 0.15 0.21 0.24 1.50 15 3 3.0 34
MADL-011011-01340W 60/75 0.10 0.13 0.17 2.30 10 4 3.0 33
MADL-011021-14210G 20/35 0.18 0.23 0.24 2.00 10 2 2.6 x 5.8 35
Non Gold Doped Die
Part Number
VB3
(10 µA)
CJ
@ 10 V4
( 1 MHz)
CJ
@ 0 V
( 1 MHz)
RS
@ 10 mA5
(500 MHz)
Carrier
Lifetime5
IF = +10 mA
IR = -6 mA
I-Region
Thickness
Contact
Diameter
CW
Thermal
Resistance5
Min./Max. Typ. Max. Typ. Max. Nominal Characteristics
V pF pF pF Ohms ns µm mils °C/W
MA4L101-134 100/175 0.07 0.11 0.15 2.00 90 13 3.5 25
MA4L401-134 250/300 0.19 0.22 0.25 1.20 800 25 4.5 16
MADL-000301-01340W 200/300 0.11 0.16 0.20 1.50 200 20 3.0 39
MADL-011052-14280W 20/40 0.16 0.19 0.21 2.0 23 2 2.6 x 5.8 36
MADL-011054-01340W 60/80 0.11 0.15 0.16 1.6 74 4 1.1 38
Electrical Specifications: TA = 25°C
3. Maximum breakdown voltage is sample tested and guaranteed by design. Exceeding this maximum VB value may damage the device.
4. Junction capacitance is measured at 1 MHz @ -10 V reverse voltage. CJ10 @ 1 MHz represents the microwave CJ @ frequency >50 MHz
at 0 V.
5. Test performed with the chip bonded into a ceramic pill package. For thermal resistance package is mounted to an infinite heatsink. Chip
only CW value is approximately 2°C/W lower.
Silicon Limiter Diodes
Rev. V24
MA4L & MADL- Series
3
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Nominal High Signal Performance6:
Freq. = 9.4 GHz, TA = 25°C, Pulse Width = 1 µs, Duty Cycle = 0.1%
Part Number
Incident Peak Power Recovery Time Incident
Peak Power
CW
Input Power
1 dB
Limiting
10 dB
Limiting
15 dB
Limiting
3 dB
Peak Power = 50 W Maximum Maximum
dBm ns Watts Watts
MA4L011-134 7 30 40 10 80 2
MA4L021-134 8 31 41 15 90 3
MA4L022-134 8 31 41 15 90 3
MA4L031-134 10 33 43 25 125 4
MA4L032-134 11 34 44 25 125 4
MA4L062-134 15 38 50 75 200 5
MADL-011009-01340W 8 31 41 10 90 3
MADL-011010-01340W 11 34 44 25 125 4
MADL-011011-01340W 15 38 50 75 200 5
MADL-011021-14210G 8 31 41 10 90 3
6. Measured in a single shunt diode (die) configuration attached directly to the gold plated RF ground of a 50 Ω, SMA connectorized, test
fixture using 1 mil thick conductive silver epoxy . Chip anode contact is thermo-compression wire bonded using a 1 mil. diameter gold wire
onto a 7.2 mil thick Rogers 5880 Duroid microstrip trace. A shunt coil provides the DC return.
Part Number
Incident Peak Power Recovery Time Incident
Peak Power
CW
Input Power
1 dB
Limiting
10 dB
Limiting
15 dB
Limiting
3 dB
Peak Power = 50 W Maximum Maximum
dBm ns dBm dBm
MA4L101-134 20 45 53 100 54 38.0
MA4L401-134 30 52 60 250 60 40.0
MADL-000301-01340W 23 46 57 50 57 38.5
MADL-011052-14280W 7 28 39 50 50 36.0
MADL-011054-01340W 13 37 48 100 53 38.0
Gold Doped Die
Non Gold Doped Die
Silicon Limiter Diodes
Rev. V24
MA4L & MADL- Series
4
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Typical High Signal Peak Power Performance for a Single Shunt in a 50 Ω Circuit
Frequency = 9.4 GHz, Pulse Width = 1 µs, Duty Cycle = 0.1%
Parameter Absolute Maximum
Forward Current 100 mA
RF Peak & CW Incident Power Per Performance Table
Junction Temperature8 +175°C
Operating Temperature -55°C to +125°C
Storage Temperature -55°C to +150°C
Mounting Temperature +320°C for 10 sec.
Absolute Maximum Ratings7 TA = +25°C
7. Exceeding any one or combination of these limits may cause permanent damage to this device.
8. Maintaining diode junction ≤ +175°C will ensure MTBF >1 E+6 hrs for silicon devices.
0
5
10
15
20
25
30
35
40
45
010 20 30 40 50
Output Power (dBm)
Input Power (dBm)
0 dB
Loss Line
10 dB
Loss Line
20 dB
Loss Line
30 dB
Loss Line
MA4L011-134, MA4L021-134, MA4L022-134,
MADL-011009-01340W, MADL-011021-14210G
MA4L031-134, MA4L032-134, MADL-011010-0134W
MA4L062-134, MADL-011011-01340W
MA4L101-134
MA4L401-134
Silicon Limiter Diodes
Rev. V24
MA4L & MADL- Series
5
5
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Application Circuits
Typical 60 dBm Peak Power, 1 µs P.W., 0.1% Duty Cycle, 20 dBm Flat Leakage Limiter Circuit
Typical 50 dBm Peak Power, 1 µs P.W., 0.1% Duty Cycle, 20 dBm Flat Leakage Limiter Circuit
RF Output
RF Input
MA4L101-134 MA4L032-134
Coil: DC Return
Transmission Line: 90º @ Fo Transmission Line: 90º @ Fo
MA4L401-134
RF Output
MA4L032-134
RF Input
MA4L022-134
Coil: DC Return
Transmission Line: 90º @ Fo
Silicon Limiter Diodes
Rev. V24
MA4L & MADL- Series
6
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Notes for Specification and Nominal High Signal Performance Tables:
Maximum Series Resistance: RS is measured at 500 MHz in the ODS-30 package and is equivalent to the
total diode resistance: RS = RJ (Chip Junction Resistance) + RO (Package Ohmic Resistance).
Maximum High Signal Performance: Test freq.= 9.4 GHz, RF pulse width = 1 µs, Duty Cycle = 0.1%.
Measured with a single shunt diode (die) attached directly to the gold plated RF housing ground with 1 mil thick
conductive silver epoxy in a 50 Ω, SMA, connectorized test fixture. Chip anode contact is thermo-compression
wire bonded using a 1 mil. diameter gold wire onto a 7.2 mil thick Rogers 5880 Duroid microstrip trace. A shunt
coil provides the DC return and DC blocks are on the RF Input and Output.
Maximum CW Incident Power: Measured in a 50 Ω, SMA, connectorized housing @ 4 GHz utilizing a TWT
amplifier and the same single diode assembly configuration as stated above.
Die Handling and Mounting Information
Handling: All semiconductor chips should be handled with care in order to avoid damage or contamination from
particulates, salts, and skin oils. For individual die, the use of plastic tipped tweezers or vacuum pick up tools is
strongly recommended. Bulk handling should ensure that abrasion and mechanical shock are minimized.
Die Attach: The die have Ti-Pt-Au back and anode metal, with a final gold thickness of 1 µm. Die can be
mounted with a gold-tin, eutectic solder perform or conductive silver epoxy. The metal RF and DC ground plane
mounting surface must be free of contamination and should have a surface flatness of < ± 2 mils.
Eutectic Die Attachment Using Hot Gas Die Bonder: An 80/20, gold/tin eutectic solder perform is
recommended with a work surface temperature of 255°C and a tool tip temperature of 220°C. When the hot
gas is applied, the temperature at the tool tip should be approximately 290°C. The chip should not be
exposed to a temperatures in excess of 320°C for more than 10 seconds.
Eutectic Die Attachment Using Reflow Oven: Refer to Application Note M538, “Surface Mounting
Instructions”.
Epoxy Die Attachment: A thin, controlled amount of electrically conductive silver epoxy should be applied,
approximately 1-2 mils thick to minimize ohmic and thermal resistances. A small epoxy fillet should be visible
around the outer perimeter of the chip after placement to ensure full area coverage. Cure the conductive
silver epoxy per the manufacturer’s schedule, typically 150˚C for 1 hour.
Wire Bonding: The chip’s top contact (anode) metallization layer is comprised of Ti/Pt/Au with a final gold
thickness of 1 µm. Thermo-compression wedge bonding using a 0.7 or 1 mil diameter gold wire is
recommended. The heat stage temperature should be set to approximately 200°C with a tool tip temperature of
125˚C and a force of 18 to 40 grams. Use of ultrasonic energy is not advised but if necessary should be adjusted
to the minimum setting required to achieve a good bond. Excessive energy or force applied to the top contact
will cause the metallization to dislodge and lift off. Automatic ball bonding may also be used.
See Application Note M541, “Bonding and Handling Procedures for Chip Diode Devices” for more detailed
handling and assembly information.
Silicon Limiter Diodes
Rev. V24
MA4L & MADL- Series
7
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Part Numbering and Ordering Information
When ordering : Use the base part number followed by a dash plus the desired package style suffix or base part
only as defined in Table I “Available Case Styles” below.
For example: The MA4L011 in the 186 style package becomes MA4L011-186 or for just the chip MA4L011-134.
Table I Available Case Styles
9. See Table 2 Associated Package Parasitics.
Base Part Available Package Styles9
MA4L011 30, 31, 32, 134 (chip), 137,186, 1056, 1088
MA4L021 31, 120, 134 (chip), 1056
MA4L022 30, 32, 120, 134 (chip), 137, 186, 1056
MA4L031 31, 134 (chip), 186, 1056
MA4L032 31, 32, 134 (chip), 186, 1056
MA4L062-134 Base part (134 chip)
MA4L101 30, 134 (chip), 186
MA4L301 Base Part (MADL-000301-01340W) 31, 1056
MA4L401 30, 31, 120,134 (chip), 1056, MADL-000401-01320G for die in Gel-pack
MADL-000011-13880G Base part (MA4L011-134 chip with flying leads)
MADL-000031-13880G Base part (MA4L031-134 chip with flying leads)
MADL-000032-003000 Base part (MA4L032 chip in 30 package)
MADL-000062-105600 Base part (MA4L062 chip in 1056 package)
MADL-000062-13880G Base part (MA4L062-134 chip with flying leads)
MADL-000101-13880G Base part (MA4L101-134 chip with flying leads)
MADL-000301-01340W Base part (134 chip)
MADL-000301-13870G Base part (MADL-000301-01340W chip with flying leads)
MADL-000401-13870G Base part (MA4L401-134 chip with flying leads)
MADL-011009-01340W Base part (134 chip)
MADL-011010-01340W Base part (134 chip), In Waffle pack, MADL-011010-01340G for Gel pack
MADL-011011-01340W Base part (134 chip) In Waffle pack, MADL-011011-01340G for Gel pack
MADL-011021-14210G Chip with rectangular contact (MADL-011021-1421WR wafer on ring frame)
MADL-011052-14280W Chip with rectangular contact
MADL-011054-01340W Base part (134 chip)
Silicon Limiter Diodes
Rev. V24
MA4L & MADL- Series
8
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Package Style Package Description
Nominal
CPKG
pF
LS
nH
30 Ceramic Pill 0.18 0.60
31 Ceramic Pill 0.18 0.60
32 Ceramic Pill 0.30 0.40
120 Ceramic Pill 0.13 0.40
134 Chip
137 Epoxy Encapsulated Ceramic Surface Mount with Leads 0.14 0.70
186 Ceramic Surface Mount with Leads 0.15 0.70
1056 Ceramic Surface Mount with Wrap Around Contacts 0.20 0.70
1088 Epoxy Encapsulated Ceramic Surface Mount with Leads 0.12 0.70
1387 Chip with Flying Leads
1388 Chip with Flying Leads
1421 Chip with Rectangular Contact
1428 Chip with Rectangular Contact and BCB overlay
Table 2 Associated Package Parasitics
31,32 137
1056 30 134
Chip
120 186 1088 1387
1388
Chip with
Flying Leads
1421
1428
Chip
Silicon Limiter Diodes
Rev. V24
MA4L & MADL- Series
9
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DC-0003896
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the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future
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