© 2010 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C 55V
VDGR TJ= 25°C to 175°C, RGS = 1MΩ 55 V
VGSM Transient ±20 V
ID25 TC= 25°C (Chip Capability) 550 A
IDM TC= 25°C, Pulse Width Limited by TJM 2000 A
IATC= 25°C 200 A
EAS TC= 25°C3J
PDTC= 25°C 830 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
VISOL 50/60 Hz, 1 Minute 2500 V~
FCMounting Force 50..200 / 11..45 N/lb.
Weight 8 g
TrenchT2TM GigaMOSTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
MMIX1T550N055T2
DS100281(08/10)
VDSS = 55V
ID25 = 550A
RDS(on) ≤≤
≤≤
≤ 1.3mΩΩ
ΩΩ
Ω
Advance Technical Information
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 55 V
VGS(th) VDS = VGS, ID = 250μA 1.8 3.8 V
IGSS VGS = ±20V, VDS = 0V ±200 nA
IDSS VDS = VDSS, VGS = 0V 10 μA
TJ = 150°C 1.5 mA
RDS(on) VGS = 10V, ID = 100A, Note 1 1.3 mΩ
Features
zSilicon Chip on Direct-Copper Bond
(DCB) Substrate
zIsolated Substrate
- Excellent Thermal Transfer
- Increased Temperature and Power
Cycling Capability
- High Isolation Voltage (2500V~)
z175°C Operating Temperature
zVery High Current Handling
Capability
zFast Intrinsic Diode
zAvalanche Rated
zVery Low RDS(on)
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zDC-DC Converters and Off-Line UPS
zPrimary-Side Switch
zHigh Speed Power Switching
Applications
G
D
S
Isolated Tab
D
S
G
G = Gate D = Drain
S = Source
(Electrically Isolated Tab)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
MMIX1T550N055T2
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 60A, Note 1 90 150 S
Ciss 40 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 4970 pF
Crss 1020 pF
RGI Gate Input Resistance 1.36 Ω
td(on) 45 ns
tr 40 ns
td(off) 90 ns
tf 230 ns
Qg(on) 595 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS 150 nC
Qgd 163 nC
RthJC 0.18 °C/W
RthCS 0.05 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 550 A
ISM Repetitive, Pulse Width Limited by TJM 1700 A
VSD IF = 100A, VGS = 0V, Note 1 1.2 V
trr 100 ns
IRM 5 A
QRM 250 nC
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 200A
RG = 1Ω (External)
IF = 100A, VGS = 0V
-di/dt = 100A/μs
VR = 27.5V
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
© 2010 IXYS CORPORATION, All Rights Reserved IXYS REF: MMIX1T_550N055T2 (V9)
MMIX1T550N055T2
PIN: 1 = Gate
5-12 = Source
13-24 = Drain
Package Outline
