IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) * Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 14 * Fast Switching Qgs (nC) 3.0 * Ease of Paralleling 7.9 * Simple Drive Requirements Qgd (nC) Configuration Single DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. G D COMPLIANT * Compliant to RoHS Directive 2002/95/EC D G Available * Repetitive Avalanche Rated 0.80 S S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRF620PbF SiHF620-E3 IRF620 SiHF620 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 200 Gate-Source Voltage VGS 20 Continuous Drain Current VGS at 10 V TC = 25 C TC = 100 C Pulsed Drain Currenta ID IDM Linear Derating Factor UNIT V 5.2 3.3 A 18 0.40 W/C Single Pulse Avalanche Energyb EAS 110 mJ Repetitive Avalanche Currenta IAR 5.2 A Repetitive Avalanche Energya EAR 5.0 mJ Maximum Power Dissipation TC = 25 C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw PD 50 W dV/dt 5.0 V/ns TJ, Tstg - 55 to + 150 300d C 10 lbf * in 1.1 N*m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 C, L = 6.1 mH, Rg = 25 , IAS = 5.2 A (see fig. 12). c. ISD 5.2 A, dI/dt 95 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91027 S11-0510-Rev. B, 21-Mar-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF620, SiHF620 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 2.5 UNIT C/W SPECIFICATIONS (TJ = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = 250 A 200 - - V VDS/TJ Reference to 25 C, ID = 1 mA - 0.29 - V/C VGS(th) VDS = VGS, ID = 250 A 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = 20 V - - 100 nA Zero Gate Voltage Drain Current IDSS VDS = 200 V, VGS = 0 V - - 25 VDS = 160 V, VGS = 0 V, TJ = 125 C - - 250 Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs ID = 3.1 Ab VGS = 10 V VDS = 50 V, ID = 3.1 A A - - 0.80 1.5 - - S - 260 - Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 10 V ID = 4.8 A, VDS = 160 V, see fig. 6 and 13b - 100 - - 30 - - - 14 - - 3.0 pF nC Gate-Drain Charge Qgd - - 7.9 Turn-On Delay Time td(on) - 7.2 - - 22 - - 19 - - 13 - - 4.5 - - 7.5 - - - 5.2 - - 18 - - 1.8 - 150 300 ns - 0.91 1.8 C Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Internal Drain Inductance LD Internal Source Inductance LS VDD = 100 V, ID = 4.8 A, Rg = 18 , RD = 20 , see fig. 10b Between lead, 6 mm (0.25") from package and center of die contact D ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 C, IS = 5.2 A, VGS = 0 Vb TJ = 25 C, IF = 4.8 A, dI/dt = 100 A/s V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. www.vishay.com 2 Document Number: 91027 S11-0510-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF620, SiHF620 Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 101 100 4.5 V 10-1 ID, Drain Current (A) ID, Drain Current (A) 101 Top 150 C 100 25 C 10-1 20 s Pulse Width VDS = 50 V 20 s Pulse Width TC = 25 C 10-2 10-2 10-1 100 101 4 VDS, Drain-to-Source Voltage (V) 91027_01 10-1 10-2 91027_02 4.5 V 20 s Pulse Width TC = 150 C 10-1 100 101 7 8 9 10 Fig. 3 - Typical Transfer Characteristics RDS(on), Drain-to-Source On Resistance (Normalized) ID, Drain Current (A) 100 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V Top 6 VGS, Gate-to-Source Voltage (V) 91027_03 Fig. 1 - Typical Output Characteristics, TC = 25 C 101 5 VDS, Drain-to-Source Voltage (V) 91027_04 3.0 2.5 ID = 4.8 A VGS = 10 V 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (C) Fig. 2 - Typical Output Characteristics, TC = 150 C Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91027 S11-0510-Rev. B, 21-Mar-11 www.vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF620, SiHF620 Vishay Siliconix 750 Capacitance (pF) 600 ISD, Reverse Drain Current (A) VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 450 Ciss 300 Coss 150 Crss 101 150 C 25 C 100 VGS = 0 V 0 100 101 0.5 VDS, Drain-to-Source Voltage (V) 91027_05 Operation in this area limited by RDS(on) 5 VDS = 160 V ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) 102 VDS = 100 V VDS = 40 V 12 8 2 10 s 10 100 s 5 1 ms 2 1 10 ms 5 4 0 91027_06 3 6 9 12 Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 0.1 0.1 15 QG, Total Gate Charge (nC) TC = 25 C TJ = 150 C Single Pulse 2 For test circuit see figure 13 0 1.5 1.3 Fig. 7 - Typical Source-Drain Diode Forward Voltage ID = 4.8 A 16 1.0 VSD, Source-to-Drain Voltage (V) 91027_07 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 20 0.8 91027_08 2 5 1 2 5 10 2 5 102 2 5 103 VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91027 S11-0510-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF620, SiHF620 Vishay Siliconix RD VDS VGS 6.0 D.U.T. RG + - VDD ID, Drain Current (A) 5.0 10 V 4.0 Pulse width 1 s Duty factor 0.1 % 3.0 Fig. 10a - Switching Time Test Circuit 2.0 VDS 1.0 90 % 0.0 25 50 75 100 125 150 TC, Case Temperature (C) 91027_09 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 0 - 0.5 0.2 PDM 0.1 0.05 0.1 t1 0.02 0.01 Single Pulse (Thermal Response) t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-2 10-5 10-4 10-3 10-2 0.1 1 10 t1, Rectangular Pulse Duration (s) 91027_11 Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS L Vary tp to obtain required IAS VDS tp VDD D.U.T. RG + - IAS V DD A VDS 10 V tp 0.01 IAS Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91027 S11-0510-Rev. B, 21-Mar-11 Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF620, SiHF620 Vishay Siliconix EAS, Single Pulse Energy (mJ) 300 ID 2.3 A 3.3 A Bottom 5.2 A Top 250 200 150 100 50 0 VDD = 50 V 25 91027_12c 50 75 100 125 150 Starting TJ, Junction Temperature (C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 k QG 10 V 12 V 0.2 F 0.3 F QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91027 S11-0510-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF620, SiHF620 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer + - - Rg * * * * + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91027. Document Number: 91027 S11-0510-Rev. B, 21-Mar-11 www.vishay.com 7 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q OP 3 2 L(1) 1 *M DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 0.055 F 1.14 1.40 0.045 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 0.552 L 13.35 14.02 0.526 L(1) 3.32 3.82 0.131 0.150 OP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X10-0416-Rev. M, 01-Nov-10 DWG: 5471 b(1) L INCHES Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) Document Number: 71195 Revison: 01-Nov-10 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000