Power MOSFETs IXTH11P50 IXTT11P50 VDSS ID25 RDS(on) = = - 500V - 11A 750m P-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C - 500 V VDGR TJ = 25C to 150C, RGS = 1M - 500 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C - 11 A IDM TC = 25C, Pulse Width Limited by TJM - 44 A IA TC = 25C - 11 A EAS TC = 25C 1 J PD TC = 25C 300 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 C C 1.13 / 10 Nm/lb.in. TJ TJM Tstg TL Tsold 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque (TO-247) Weight TO-268 TO-247 4 6 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS Characteristic Values Min. Typ. Max. VGS = 0V, ID = - 250A BVDSS Temperature Coefficient - 500 VGS(th) VDS = VGS, ID = - 250A VGS(th) Temperature Coefficient - 3.0 IGSS IDSS V %/K 0.09 V %/K VGS = 20V, VDS = 0V 100 nA VDS = VDSS, VGS = 0V - 200 A VGS = 10V, ID = - 5.5A, Note 1 RDS(on) Temperature Coefficient (c) 2013 IXYS CORPORATION, All Rights Reserved - 0.25 G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features International Standard Packages Low RDS (on) HDMOSTM Process z Rugged Polysilicon Gate Cell Structure z Avalanche Rated z Low Package Inductance - Easy to Drive and to Protect z z Advantages - 5.0 TJ = 125C RDS(on) g g TO-247 (IXTH) z z z Easy to Mount Space Savings High Power Density -1 mA 750 m 0.92 %/K DS94535L(01/13) IXTH11P50 IXTT11P50 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 6 VDS = -10V, ID = 0.5 * ID25, Note 1 Ciss Coss 11 S 4600 pF 500 pF 187 pF 26 ns 32 ns 80 ns 34 ns 145 nC 30 nC 55 nC VGS = 0V, VDS = - 25V, f = 1MHz Crss td(on) Resistive Switching Times tr VGS = -10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 td(off) RG = 4.7 (External) tf Qg(on) VGS = -10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgs TO-247 Outline Qgd 0.42 C/W RthJC RthCS TO-247 0.21 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V - 11 A ISM Repetitive, Pulse Width Limited by TJM - 44 A VSD IF = IS, VGS = 0V, Note 1 - 3.0 V trr IF = -11A, -di/dt = -100A/s VR = -100V, VGS = 0V 500 1 2 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 1: 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline ns Terminals: 1 - Gate 3 - Source Note P 3 2 - Drain 4 - Drain Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTH11P50 IXTT11P50 Fig. 2. Extended Output Characteristics @ T J = 25C Fig. 1. Output Characteristics @ T J = 25C -12 -40 VGS = -10V - 7V -10 -32 ID - Amperes -6 -4 - 7V -28 - 6V -8 ID - Amperes VGS = -10V - 8V -36 - 5V -24 -20 - 6V -16 -12 -8 -2 - 5V -4 0 0 0 -1 -2 -3 -4 -5 -6 0 -7 -10 -15 -20 -25 -30 VDS - Volts Fig. 3. Output Characteristics @ T J = 125C Fig. 4. RDS(on) Normalized to ID = - 5.5A Value vs. Junction Temperature -12 2.4 VGS = -10V - 7V VGS = -10V -10 2.0 R DS(on) - Normalized - 6V ID - Amperes -5 VDS - Volts -8 -6 - 5V -4 I D = -11A 1.6 I D = - 5.5A 1.2 0.8 -2 - 4V 0 0.4 0 -2 -4 -6 -8 -10 -12 -14 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = - 5.5A Value vs. Drain Current 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature -12 2.4 VGS = -10V 2.2 -10 TJ = 125C 2.0 ID - Amperes R DS(on) - Normalized 25 TJ - Degrees Centigrade 1.8 1.6 1.4 -8 -6 -4 TJ = 25C 1.2 -2 1.0 0 0.8 0 -5 -10 -15 -20 -25 ID - Amperes (c) 2013 IXYS CORPORATION, All Rights Reserved -30 -35 -40 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTH11P50 IXTT11P50 Fig. 8. Transconductance Fig. 7. Input Admittance -20 24 TJ = - 40C -18 20 -16 -14 25C g f s - Siemens ID - Amperes 16 -12 -10 TJ = 125C 25C - 40C -8 -6 125C 12 8 -4 4 -2 0 -3.0 0 -3.4 -3.8 -4.2 -4.6 -5.0 -5.4 -5.8 -6.2 0 -2 -4 -6 -8 -10 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode -14 -16 -18 -20 -22 Fig. 10. Gate Charge -35 -10 VDS = - 250V -9 -30 I D = - 5.5A -8 -25 I G = -1mA -7 VGS - Volts IS - Amperes -12 ID - Amperes -20 -15 TJ = 125C -6 -5 -4 -3 -10 -2 TJ = 25C -5 -1 0 0 0.0 -0.5 -1.0 -1.5 -2.0 0 -2.5 20 40 60 80 100 120 140 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 10,000 1 Ciss Z(th)JC - C / W Capacitance - PicoFarads f = 1 MHz 1,000 Coss 0.1 0.01 Crss 100 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds 0.1 1 10 IXTH11P50 IXTT11P50 Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ T C = 25C @ T C = 75C - 100 - 100 RDS(on) Limit RDS(on) Limit 100s 100s - 10 - 10 ID - Amperes ID - Amperes 1ms 10ms -1 1ms 10ms -1 100ms DC - 0.1 - 10 100ms TJ = 150C TJ = 150C TC = 25C Single Pulse TC = 75C Single Pulse - 100 VDS - Volts (c) 2013 IXYS CORPORATION, All Rights Reserved - 1000 - 0.1 - 10 DC - 100 -1000 VDS - Volts IXYS REF: T_11P50(7X-L64)7-19-12