1.9
0.950.951.0
2. 4
1. 3
2.9
0.4
SOT-23 Plastic-Encapsulated Diodes
BAL99LT1 SWITCHING DIODE
FEATURES
Power dissipation
PD: 225 mW (Tamb=25)
Forward Current
IF: 100 m A
Reverse Voltage
VR: 70 V
Operating and storage junction temperature range
TJ, Tstg: -55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Reverse breakdown voltage V(BR) IR= 100µA 70 V
Reverse voltage leakage current IR V
R=70V 2.5
µA
Forward voltage VF
IF=1 mA
IF=10 mA
IF=50 mA
IF=150mA
715
855
1000
1250
mV
Diode capacita nce CD V
R=0V, f=1MHz 1.5 pF
Reverse recovery time t r r 6
nS
Unit: mm
SOT -23
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