SOT223 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTORS
ISSUE 2 FEBRUARY 1995
FEATURES
* 60 Volt VCEO
* 3 Amp continuous current
* Low saturation voltage
COMPLEMENTARY TYPE FZT751
PARTMARKING DETAIL FZT651
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 6A
Continuous Collector Current IC3A
Power Dissipation at Tamb
=25°C Ptot 2W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 80 V IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 60 V IC=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO 5V
IE=100µA
Collector Cut-Off Current ICBO 0.1
10 µA
µA
VCB
=60V
VCB
=60V,T
amb
=100°C
Emitter Cut-Off Current IEBO 0.1 µAVEB
=4V
Collector-Emitter
Saturation Voltage
VCE(sat) 0.12
0.43
0.3
0.6
V
V
IC=1A, IB
=100mA*
IC=3A, IB
=300mA*
Base-Emitter
Saturation Voltage
VBE(sat) 0.9 1.25 V IC=1A, IB
=100mA*
Base-Emitter
Turn-On Voltage
VBE(on) 0.8 1 V IC=1A, VCE
=2V*
Static Forward Current
Transfer Ratio
hFE 70
100
80
40
200
200
170
80
300
IC=50mA, VCE =2V*
IC=500mA, VCE
=2V*
IC=1A, VCE
=2V*
IC=2A, VCE
=2V*
Transition Frequency fT140 175 MHz IC=100mA, VCE =5V
f=100MHz
Switching Times t on 45 ns IC=500mA, VCC =10V
IB1=IB2=50mA
t off 800 ns
Output Capacitance Cobo 30 pF VCB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
FZT651
FZT651
C
C
E
B
3 - 208 3 - 207
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I
C
- Collector Current (Amps)
V - (Volts)
Single Pulse Test at T
amb
=25°C
0.01 0.1 101
I
C
- Collector Current (Amps)
VBE(sat) v IC
V - (Volts)
I
C
- Collector Current (Amps)
hFE v IC
h- Gain
0.01 100.1 1
V
CE
=2V
0.6
0.8
1.0
1.2
I
C
- Collector Current (Amps)
VBE(on) v IC
V- (Volts)
Switching Speeds
I
C
- Collector Current (Amps)
Switching time
0.1 1
I
B1
=I
B2
=I
C
/10
0.01
ts
tf
td
tr
ts
ns
125
175
225
75
0
0.6
0.8
1.0
1.2
0.4
0
0.1
0.2
0.4
0.5
0.3
0.6
0.0010.0001
I
C
/I
B
=10
1.4
0.01 100.1 1
0.0001 0.001
I
C
/I
B
=10
0.01 100.1 1
0.0001 0.001
V
CE
=2V
0
td
tr
tf
ns
100
120
40
20
60
80
140
0
1000
1200
400
200
600
800
1400
0.1 100
1s
100ms
10
DC
0.01
VCE - Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100
µ
s
110
0.1
1
SOT223 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTORS
ISSUE 2 FEBRUARY 1995
FEATURES
* 60 Volt VCEO
* 3 Amp continuous current
* Low saturation voltage
COMPLEMENTARY TYPE FZT751
PARTMARKING DETAIL FZT651
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 6A
Continuous Collector Current IC3A
Power Dissipation at Tamb
=25°C Ptot 2W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 80 V IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 60 V IC=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO 5V
IE=100µA
Collector Cut-Off Current ICBO 0.1
10 µA
µA
VCB
=60V
VCB
=60V,T
amb
=100°C
Emitter Cut-Off Current IEBO 0.1 µAVEB
=4V
Collector-Emitter
Saturation Voltage
VCE(sat) 0.12
0.43
0.3
0.6
V
V
IC=1A, IB
=100mA*
IC=3A, IB
=300mA*
Base-Emitter
Saturation Voltage
VBE(sat) 0.9 1.25 V IC=1A, IB
=100mA*
Base-Emitter
Turn-On Voltage
VBE(on) 0.8 1 V IC=1A, VCE
=2V*
Static Forward Current
Transfer Ratio
hFE 70
100
80
40
200
200
170
80
300
IC=50mA, VCE =2V*
IC=500mA, VCE
=2V*
IC=1A, VCE
=2V*
IC=2A, VCE
=2V*
Transition Frequency fT140 175 MHz IC=100mA, VCE =5V
f=100MHz
Switching Times t on 45 ns IC=500mA, VCC =10V
IB1=IB2=50mA
t off 800 ns
Output Capacitance Cobo 30 pF VCB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
FZT651
FZT651
C
C
E
B
3 - 208 3 - 207
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I
C
- Collector Current (Amps)
V - (Volts)
Single Pulse Test at T
amb
=25°C
0.01 0.1 101
I
C
- Collector Current (Amps)
VBE(sat) v IC
V - (Volts)
I
C
- Collector Current (Amps)
hFE v IC
h- Gain
0.01 100.1 1
V
CE
=2V
0.6
0.8
1.0
1.2
I
C
- Collector Current (Amps)
VBE(on) v IC
V- (Volts)
Switching Speeds
I
C
- Collector Current (Amps)
Switching time
0.1 1
I
B1
=I
B2
=I
C
/10
0.01
ts
tf
td
tr
ts
ns
125
175
225
75
0
0.6
0.8
1.0
1.2
0.4
0
0.1
0.2
0.4
0.5
0.3
0.6
0.0010.0001
I
C
/I
B
=10
1.4
0.01 100.1 1
0.0001 0.001
I
C
/I
B
=10
0.01 100.1 1
0.0001 0.001
V
CE
=2V
0
td
tr
tf
ns
100
120
40
20
60
80
140
0
1000
1200
400
200
600
800
1400
0.1 100
1s
100ms
10
DC
0.01
VCE - Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100
µ
s
110
0.1
1
