Philips Semiconductors Product specification
Rectifier diodes BYV32E, BYV32EB series
ultrafast, rugged
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop VR = 100/ 150 V/ 200 V
• Fast switching
• Soft recovery characteristic VF ≤ 0.85 V
• Reverse surge capability
• High thermal cycling performance IO(AV) = 20 A
• Low thermal resistance IRRM = 0.2 A
trr ≤ 25 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYV32E series is supplied in the SOT78 conventional leaded package.
The BYV32EB series is supplied in the SOT404 surface mounting package.
PINNING SOT78 (TO220AB) SOT404
PIN DESCRIPTION
1 anode 1 (a)
2 cathode (k) 1
3 anode 2 (a)
tab cathode (k)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYV32E / BYV32EB -100 -150 -200
VRRM Peaqk repetitive reverse - 100 150 200 V
voltage
VRWM Crest working reverse voltage - 100 150 200 V
VRContinuous reverse voltage - 100 150 200 V
IO(AV) Average rectified output current square wave; δ = 0.5; - 20 A
(both diodes conducting) Tmb ≤ 115 ˚C
IFRM Repetitive peak forward current t = 25 µs; δ = 0.5; - 20 A
per diode Tmb ≤ 115 ˚C
IFSM Non-repetitive peak forward t = 10 ms - 125 A
current per diode t = 8.3 ms - 137 A
sinusoidal; with reapplied
VRWM(max)
IRRM Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 0.2 A
per diode
IRSM Non-repetitive peak reverse tp = 100 µs - 0.2 A
current per diode
Tstg Storage temperature -40 150 ˚C
TjOperating junction temperature - 150 ˚C
1 It is not possible to make connection to pin 2 of the SOT404 package
k
a1 a2
13
2
13
tab
2
123
tab
August 2001 1 Rev 1.300