&) HARRIS 2N6765 2N6766 N-Channel Enhancement-Mode August 1991 Power Field-Effect Transistors Features Package TO-204AE 25A and 30A, 150V - 200V BOTTOM VIEW * rDS(on) = 9-085 and 0.122 * SOA is Power-Dissipation Limited SOURCE J (FLANGE) * Nanosecond Switching Speeds Linear Transfer Characteristics * High Input Impedance Majority Carrier Device Description The 2N6765 and 2N6766 are n-channel enhancement-mode | Terminal Diagram silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, N-CHANNEL ENHANCEMENT MODE a relay drivers, and drivers for high-power bipolar switching fi : a + al transistors requiring high speed and low gate-drive power. These D w 4 types can be operated directly from integrated circuits. $ oO = These types are supplied in the JEDEC TO-204AE steel package. = oc Ow G zs fo} a Ss Absolute Maximum Ratings (Tc = +259C) Unless Otherwise Specified 2N6765 2N6766 UNITS Drain-Source Voltage ...... 0... cece cece cnet ete ee en eee teeeneee 150* 200* Vv Drain-Gate Voltage (Rgs = 20kN) 150* 200* Vv Continuous Drain Current To FBB9G ccc eee cee eee ener ea nen eas 25* 30* A Oe et a 16* 19% A Pulsed Drain Current 50 60 A Gate~Source Voltage +20 +20 Vv Maximum Power Dissipation To = +259C (See Figure 11) 2.0... eee tee eee ee ees 150* 150* Ww Te = +1009C (See Figure 11)....... eee ceee eee e eens 60* 60* Ww Linear Derating Factor (See Figure 11) ........-.........-- 1,.2* 1,.2* w/9C Inductive Current, Clamped 0... .. 0... c cece een nee e ee ret eee 50 60 A (See Figures 1 and 2, = 100yH) Operating and Storage Junction Temperature Range............ Ty TSTG -55 to +150* -55 to +150* C Maximum Lead Temperature for Soldering ..............cceeeeeeenee TL 300* 300* 9 (0.063" (1.6mm) from case for 10s) *JEDEC registered values CAUTION: These devices are sensitive to electrostatic discharge. Proper i.C. handling procedures should be foliowed File Number 1 59 1.1 Copyright Harris Corporation 1991 4-27 Specifications 2N6765, 2N6766 Electrical Characteristics @ Tc = 25C (Unless Otherside Specified) Parameter Types Min. Typ. Max. Units Test Conditions BVogs Orain Source Breakdown Voltage | 2NG765 150 - - v Vos70 2N6766 |] 200 - - Vo | Ip =1.0ma Vesith) Gate Threshold Voltage ALL | 2.0 - 4.0 Vv | Vps = Ves. tp = mA Igsse Gate ~ Body Leakage Forward ALL - - 100 nA Vag = 20V lossy Gate Body Leakage Reverse ALL - - 100 nA Vos = -20V loss Zero Gate Voltage Drain Current ALL - 0.1 1.0* mA Vos = Max. Rating, Vgg = 0 = 02 | 40 | mA | Vog = Max. Rating, Vgg = 0, Tc = 125C VpSton) Static Drain-Source On-State 2N6765 ~ - 3.0 Vv Ves = 10V, Ip = 25A Voltage @ 2N6766 - ~ 27 v Vg = 10V, Ip = 30A Rosion) Static Drain-Source On-State 2N6765 - 0.09 | 0.12* 2 Vg = 10V, Ip = 164 Revittance 2ne7es | | 0.07 | 0.085*| | Vgg= 10V, Ip -19A R Static Drain-Source On-State 2N6765 - -~ 0.216* a Vgg = 10V, Ip = 16A, Te = 125C DSion) p sist @ S s ene 2N6766 - = 0.183*] 9 | Vgg= 10V, Ip = 19A, Te = 125C %, Forward Transconductance oO ALL 9.0* 15.5 27 $ (3) | Vg = 15. Ip = 19A CG; Input Capacitance ALL 1000 | 2000 | 3000 pF Vas = 0. Vpg = 25V. f= 1.0 MHz Cons Output Capacitance ALL 450 800 1200 pF See Fig. 10 we Fig. Cus Reverse Transfer Capacitance ALL 150 300 500 oF Td fon} Turn-On Delay Time . ALL - - 35 ns Vop = 98V. Ip = 194, 2, = 4.72 t Rise Time ALL ~ - 100 ns {See Figs. 13 and 14) tg (ott) Turn-Off Delay Time ALL = _ 125 ns (MOSFET switching times are essentially t Fall Time ALL = - 100 ns independent of aperating temperature.) Thermal Resistance Rinyc Junction-to-Case ALL - - 0.83* | c/w Rincs _Case-to-Sink ALL - 0.1 - C/W | Mounting surface flat, smooth, and greased. Ringa Junction-to-Ambient ALL - - 3 C/W | Typical socket mount Body-Drain Diode Ratings and Characteristics Ig, Continuous Source Current 2N6765 = = 25 A Modified MOSFET symboi (8 Diode) = = . showing the integral ody 2N6766 30 reverse P-N junction rectifier. Ina Pulsad Source Current 2N6765 = - 50 A (Body Diode! 2N6766 = = 60 Vso Diode Forward Voltage (7) 2N6765 | 0.85* ~ 17 v To = 28C, Ig = 25A, Vag = 0 2N6766 | 0.9 - 18 V | Te = 259C, Ig = 30A, Vag = 0 ter Reverse Recovery Time ALL ~ $00 - ns Ty = 150C, Ie = Iggg. dig/dt = 100 A/us Ona Reverse Recovered Charge ALL ~ 10 - uc Ty = 180C, Ip = long, dg/dt = 100 A/us *JEDEC registered values. (1) Pulse Test: Pulse Width < 300 usec, Duty Cycle < 2% VARY ty TO OBTAIN REQUIRED PEAK |, a Ey = 0.58Vpsg Ve = 0.788v, Vgg = 10V & DSS U _ Fig. 1 Clamped Inductive Test Circuit Fig. 2 Clamped Inductive Waveforms 4-28 2N6765, 2N6766 30 80 us PULSE TEST Vgs=?V 25 80 ys PULSE TEST | 2 18V a g Vos 7 15 2 = 20 = < - - = i & = 5 4 oc 2 = wo o z z < = 15 Ty = 12500 3 2 | 2 2? Ty = 25C l 5 Ty = -500C 35V 0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 Vos, DRAIN-TO-SQURCE-VOLTAGE (VOLTS) Vg, GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Output Characteristics Fig. 4 Typical Transfer Characteristics 20 lov 10V gv 80 us PULSE TEST 8Vv 80 us PULSE TEST 16 tf al % a uw ye 6 wl =< Oo o w =z = = < = < z= 12 =e E 2 = 9 uw # z zs = = 3 6 a z = 8 = < = a S 2 4 a 04 08 12 16 20 0 04 08 12 1.6 2.0 Vos, ORAIN.TO-SOQUACE VOLTAGE (VOLTS) Vos, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 5 Typical Saturation Characteristics Fig. 6 Typical Saturation Characteristics (2N6765) (2N6766) OPERA THIS AREA IS LIMITED 8Y Rosion) a = a # = wi a Ty = 1259C = ws < o z z e oc ey o a 2 8 Vos = z 3 ibs NY z 2 80 ys PULSE TEST a = 5 Te= < Ty = 1509C MAX. Rinse = 9.83 SINGLE PULSE 0 10 20 30 40 50 402 5 0 20 50 100 200 S00 Ip, ORAIN CURRENT (AMPERES) Vpg. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 7 Typical Transconductance Vs. Drain Current Fig. 8 Maximum Safe Operating Area 4-29 2N6765, 2N6766 4000 3200 2400 (NORMALIZED) Rpsion). DRAIN-TO-SQURCE ON RESISTANCE C, CAPACITANCE (aF) 800 -40 0 40 80 Ty, JUNCTION TEMPERATURE (C) Fig.9Normalized Typical On-Resistance Vs. Temperature 120 160 \ XJ 140 420 ey 100 o a Pp, POWER DISSIPATION (WATTS} ig, SOURCE CURRENT (AMPERES) = o \ N 20 20 40 60 80 100 Tc CASE TEMPERATURE (C) Fig. 11 Power Vs. Temperature Derating Curve 120 140 Vop =98V VGs (on) Q INPUT, V; PRE = 1 kHz Vo 10% tpi las TO SCOPE VGs (off) mt td (on) Vos (of) OUTPUT, Vy Ty= 1500 10 20 Ig, 2NG766 Ty = 25C 1 PULSE WIDTH 90% 90% INPUT PULSE RISE TIME Eve 10% 90% > 1d (off) >] 40 50 Vpg, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage 2 Vgp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Fig. 12 Typical Body-Drain Diode Forward Voltage 50% (NPUT PULSE FALL TIME y>| 10% 90% Vos (on) a Fig. 13 Switching Time Test Circuit 4-30 -- on __ loff Fig. 14 Switching Time Waveforms