MMBD1501/A / 1503/A / 1504/A / 1505/A Discrete POWER & Signal Technologies N MMBD1501/A / 1503/A / 1504/A / 1505/A 3 CONNECTION DIAGRAMS 11 3 1 2 SOT-23 MMBD1501 MMBD1503 MMBD1504 MMBD1505 1 3 1501 2 MARKING 11 MMBD1501A 13 MMBD1503A 14 MMBD1504A 15 MMBD1505A 2 NC 1 1 1 2 1503 2 3 3 1504 A11 A13 A14 A15 3 1 1505 2 High Conductance Low Leakage Diode Sourced from Process 1L. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage 180 V IO Average Rectified Current 200 mA IF DC Forward Current 600 mA if Recurrent Peak Forward Current 700 mA if(surge) Tstg Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range 1.0 2.0 -55 to +150 A A C TJ Operating Junction Temperature 150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Max Units MMBD1501/A/ 1503-1505/A* 350 2.8 357 mW mW/C C/W *Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2 (continued) Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions BV Breakdown Voltage I R = 5.0 A IR Reverse Current VF Forward Voltage CO Diode Capacitance VR = 125 V VR = 125 V, TA = 150C VR = 180 V VR = 180 V, TA = 150C I F = 1.0 mA I F = 10 mA I F = 50 mA I F = 100 mA I F = 200 mA I F = 300 mA VR = 0, f = 1.0 MHz Min Max Units 1.0 3.0 10 5.0 720 830 890 930 1.1 1.15 4.0 nA A nA A mV mV mV mV V V pF 200 620 720 800 830 0.87 0.9 V Typical Characteristics 325 Ta= 25C 300 275 5 10 20 30 50 I R - REVERSE CURRENT (uA) Ta= 25C 2 1 0 130 100 150 170 190 VR - REVERSE VOLTAGE (V) 205 GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature FORWARD VOLTAGE vs FORWARD CURRENT VF - 1 to 100 uA FORWARD VOLTAGE vs FORWARD CURRENT VF - 0.1 to 10 mA VFF - FORWARD VOLTAGE (mV) V 3 3 VVFF - FORWARD VOLTAGE (mV) 250 REVERSE CURRENT vs REVERSE VOLTAGE IR - 130 - 205 Volts IR - REVERSE CURRENT (nA) VR - REVERSE VOLTAGE (V) REVERSE VOLTAGE vs REVERSE CURRENT BV - 3.0 to 100 uA 800 Ta= 25C Ta= 25C 550 750 500 700 650 450 600 400 350 550 1 2 3 5 10 20 30 50 IF - FORWARD CURRENT (uA) 100 500 0.1 0.2 0.3 0.5 1 2 3 5 I F - FORWARD CURRENT (mA) 10 MMBD1501/A / 1503/A / 1504/A / 1505/A High Conductance Low Leakage Diode (continued) Typical Characteristics (continued) 1.2 CAPACITANCE vs REVERSE VOLTAGE VR - 0 to 15 V 4 Ta= 25C CAPACITANCE (pF) VF - FORWARD VOLTAGE (V) FORWARD VOLTAGE vs FORWARD CURRENT VF - 10 to 800 mA 1.1 1 0.9 0.8 20 30 50 100 200 300 500 Ta= 25C 3.5 3 2.5 2 1.5 1 10 0 IFIF - FORWARD CURRENT (mA) 500 IR 400 300 OR WA R D CU RR EN T Io - A VE R AGE REC T IFIE 200 100 0 -F ST EA D YS TA TE D CU RRE NT - -m A mA 50 100 150 o TA - AMBIENT TEMPERATURE ( C) 4 6 8 10 REVERSE VOLTAGE (V) 12 14 15 POWER DERATING CURVE 400 DO-35 Pkg 300 SOT-23 Pkg 200 100 0 0 2 500 PD - POWER DISSIPATION (mW) Average Rectified Current (Io) & Forward Current (I F) versus Ambient Temperature (TA) I - CURRENT (mA) MMBD1701/A / 1703/A / 1704/A / 1705/A High Conductance Low Leakage Diode 0 50 100 150 IO - AVERAGE TEMPERATURE ( oC) 200