TLP747J TOSHIBA Photocoupler GaAs Ired & Photo-Thyristor TLP747J Office Machine Household Use Equipment Solid State Relay Switching Power Supply Unit in mm The TOSHIBA TLP747J consists of a photo-thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP. * Peak off-state voltage: 600V min. * Trigger LED current: 15mA max. * On-state current: 150mA max. * UL recognized: UL1577, file no. E67349 * BSI approved: BS EN60065: 1994, certificate no. 7364 BS EN60950: 1992, certificate no. 7365 * SEMKO approved: SS4330784, certificate no. 9325163, 9522142 Isoration voltage: 4000Vrms min. * Option (D4) type VDE approved: DIN VDE0884 / 06.92 Certificate no. 74286, 91808 TOSHIBA 11-7A8 Weight: 0.42 g Maximum operating insulation voltage: 630,890VPK Highest permissible over voltage: 6000, 8000VPK (Note) When a VDE0884 approved type is needed, please designate the "option (D4)" 7.62mm pich standard type * Creepage distance: 7.0mm (min.) Clearance: 7.0mm (min.) Isolation thickness: 0.5mm (min.) 10.16mm pich TLPxxxF type 8.0mm (min.) 8.0mm (min.) 0.5mm (min.) Pin Configurations (top view) 1 6 2 5 3 4 1 : Anode 2 : Cathode 3 : NC 4 : Cathode 5 : Anode 6 : Gate 1 2002-09-25 TLP747J Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit IF 60 mA IF / C -0.7 mA / C Peak forward current (100s pulse, 100pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 C Peak forward voltage (RGK = 27k) VDRM 600 V Peak reverse voltage (RGK = 27k) VRRM 600 V On-state current IT(RMS) 150 mA On-state current derating (Ta 25C) IT / C -2.0 mA / C Forward current Detector LED Forward current derating (Ta 39C) Peak on-state current (100s pulse, 120pps) ITP 3 A Peak one cycle surge current ITSM 2 A Peak reverse gate voltage VGM 5 V PD 150 mW PD / C -2.0 mW / C Tj 100 C Storage temperature range Tstg -55~125 C Operating temperature range Topr -40~100 C Lead soldering temperature (10s) Tsol 260 C Total package power dissipation PT 250 mW PT / C -3.3 mW / C BVS 4000 Vrms Power dissipation Power dissipation derating (Ta 25C) Junction temperature Total package power dissipation derating (Ta 25C) Isolation voltage (AC, 1 min., R.H. 60%) (Note) (Note) Device considered a two terminal device: Pins 1, 2 and 3 shorted together, and pins 4, 5 and 6 shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VAC 240 Vac Forward current IF 20 25 mA Operating temperature Topr -25 85 C Gate to cathode resistance RGK 10 27 k Gate to cathode capacity CGK 0.01 0.1 F 2 2002-09-25 TLP747J Individual Electrical Characteristics (Ta = 25C) Detector LED Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10mA 1.0 1.15 1.3 V Reverse current IR VR = 5V 10 A Capacitance CT V = 0, f = 1MHz 30 pF Off-state current IDRM VAK = 400V RGK = 27k Ta = 25C 10 5000 nA Ta = 85C 1 100 A Reverse current IRRM VKA = 400V RGK = 27k Ta = 25C 10 5000 nA Ta = 85C 1 100 A On-state voltage VTM ITM = 100mA 0.9 1.3 V Holding current IH RGK = 27k 0.2 mA Off-state dv / dt dv / dt VAK = 280V, RGK = 27k 5 10 V / s Anode to gate 20 Gate to cathode 350 Min. Typ. Max. Unit Capacitance Cj V = 0, f = 1MHz pF Coupled Characteristics (Ta = 25C) Characteristic Symbol Test Condition Trigger LED current IFT VAK = 6V, RGK = 27k 15 mA Turn-on time tON IF = 30mA, VAA = 50V RGK = 27k 10 s 500 V / s 0.8 pF 10 4000 AC, 1 second, in oil 10000 DC, 1 minute, in oil 10000 Coupled dv / dt Capacitance (input to output) Isolation resistance dv / dt CS RS VS = 500V, RGK = 27k VS = 0, f = 1MHz VS = 500V, R.H. 60% AC, 1 minute Isolation voltage BVS 3 12 1x10 14 Vrms Vdc 2002-09-25 TLP747J IT (RMS) - Ta 250 80 200 R.M.S. on-state current IT (RMS) (mA) Allowable forward current IF (mA) IF - Ta 100 60 40 20 0 -20 150 100 50 0 60 40 20 80 100 0 -20 120 0 Ambient temperature Ta (C) Pulse width 100s 30 (mA) 500 Forward current IF Allowable pulse forward current IFP (mA) Ta = 25C 50 1000 300 100 50 30 10 5 3 1 0.5 0.3 10-3 10-2 3 10-1 3 0.1 0.6 100 3 0.8 1.0 1.2 Forward voltage Duty cycle ratio DR VF / Ta - IF 1.4 VF 1.6 1.8 (V) IFP - VFP 1000 (mA) 300 -2.4 IFP 500 -2.8 100 -2.0 Pulse forward current -3.2 Forward voltage temperature coefficient VF / Ta (mW / C) 120 IF - VF 100 Ta = 25C 10 3 100 80 Ambient temperature Ta (C) IFP - DR 3000 60 40 20 -1.6 -1.2 -0.8 50 30 10 Pulse width 10s 5 Repetitive 3 frequency = 100Hz Ta = 25C -0.4 0.1 0.3 0.5 1 3 Forward current 5 IF 10 30 1 0.6 50 (mA) 1.0 1.4 1.8 2.2 Pulse forward voltage VFP 4 2.6 (V) 2002-09-25 TLP747J ton - IF dv / dt - RGK 30 Ta = 25C (s) VAK = 200V RL = 100 VAA = 50V 20 Critical rate of rise of off-state voltage dv / dt (V / s) ton Turn-on time 200 RGK = 27k 10 0 0 10 20 40 30 Forward current IF (mA) 100 400V 50 30 10 Ta = 25C 5 1 5 10 30 Gate-cathode resistance RGK 50 100 (k) 20 RGK = 10k 10 27k IFT - RGK 20 40 80 60 100 IH - Ta 30 RGK = 10k Holding current IH (mA) 0.7 0.5 50 Trigger LED current Ambient temperature Ta (C) (mA) 5 3 0 200 VAK = 6V RL = 100 IFT Trigger LED current IFT (mA) IFT - Ta 3 0.3 VAK = 6V RL = 100 10 5 2 1 27k Ta = 25C 3 5 10 30 50 Gate-cathode resistance RGK 0.1 0 20 40 80 60 100 200 (k) 100 IH - RGK Ambient temperature Ta (C) 5 Ta = 25C 3 (mA) IH Holding current Critical rate of rise of off-state voltage dv / dt (V / s) dv / dt - CGK Ta = 85C 500 VAK = 400V 300 R GK = 27k 100 50 30 1 0.5 0.3 10 5 0.001 0.003 0.005 Gate-cathode capacitance 0.1 1 0.01 CGK (F) 3 5 10 30 50 Gate-cathode resistance RGK 5 100 200 (k) 2002-09-25 TLP747J RESTRICTIONS ON PRODUCT USE 000707EBC * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. * * * The products described in this document are subject to the foreign exchange and foreign trade laws. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice. 6 2002-09-25