DATA SHEET GaAs FET NES1823M-180 180 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-180 is a 180 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It is capable of delivering 180 W of output power (CW) with high linear gain, high efficiency and excellent distortion under the condition of 12 V operation. Its primary band is 1.8 to 2.3 GHz. The device employs 0.7 m Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance, thermal characteristics, and reliability. FEATURES * Push-pull type GaAs FET * VDS = 12.0 V operation * High output power: Pout = 180 W TYP. * High linear gain: GL = 12.5 dB TYP. * High power added efficiency: add = 48% TYP. @ VDS = 12.0 V, IDset = 2.0 A (total), f = 2.17 GHz * Hollow plastic package ORDERING INFORMATION Part Number NES1823M-180 Package T-92M Supplying Form ESD protective tray Remark To order evaluation samples, contact your nearby sales office. Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PG10357EJ01V0DS (1st edition) Date Published August 2003 CP(K) Printed in Japan NEC Compound Semiconductor Devices 2003 NES1823M-180 ABSOLUTE MAXIMUM RATINGS (TA = +25C) Operation in excess of any one of these parameters may result in permanent damage. Parameter Symbol Ratings Unit Drain to Source Voltage VDS 19 V Gate to Source Voltage VGSO -7 V Gate to Drain Voltage VGDO -26 V Gate Current IG 900 mA Total Power Dissipation Ptot 250 W Channel Temperature Tch 175 C Storage Temperature Tstg -65 to +150 C Gcomp 3.0 dB Gain Compression (CW) RECOMMENDED OPERATING LIMITS Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Drain to Source Voltage VDS - 12.0 12.0 V Channel Temperature Tch - - +150 C Set Drain Current IDset - 3.0 6.0 A - 0.6 1.2 MIN. TYP. MAX. Unit -0.8 -0.5 -0.2 V - 0.30 0.40 C/W 51.5 52.5 - dBm - 32 - A - 48 - % 11.5 12.5 - dB Gate Resistance VDS = 12.0 V, RF OFF Note Rg Note Rg is the series resistance between the gate supply and the FET gate. VGS Rg = Rg1 x Rg2 D1 Rg1 Rg1 + Rg2 G1 S G2 Rg2 D2 VGS ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter Symbol Test Conditions Pinch-off Voltage Vp VDS = 2.5 V, ID = 650 mA Thermal Resistance Rth Channel to Case Output Power Pout f = 2.17 GHz CW, VDS = 12 V, Drain Current ID Pin = 43.0 dBm, Rg = 0.6 , Power Added Efficiency add IDset = 2.0 A Total (RF OFF) Linear Gain GL (GL : Pin = 31 dBm) Note Note IDset = 1.0 A each drain 2 Data Sheet PG10357EJ01V0DS NES1823M-180 TYPICAL CHARACTERISTICS (TA = +25C) OUTPUT POWER, add vs. INPUT POWER GAIN vs. FREQUNCY RESPONSE 60 40 Pout 35 40 30 add 20 25 13 Gain GL (dB) 80 45 20 15 14 100 VDS= 12 V, IDset = 2.0 A Rg = 0.6 , CW-signal, 50 f = 2.14 GHz Power Added Efficiency add (%) Output Power Pout (dBm) 55 25 30 35 40 12 11 10 9 0 20 VDS= 12 V, IDset = 2.0 A Rg = 0.6 , CW, Pin = 31 dBm 8 1.9 45 2.0 2.2 2.3 2.4 Frequency f (GHz) Input Power Pin (dBm) 3rd/5th Order Inter Modulation Distortion IM3/IM5 (dBc) 2.1 IM3/IM5 vs. AVERAGE OUTPUT POWER (SET IDS DEPENDENCE) -20 -25 -30 VDS= 12 V, IDset = 2 A Rg = 0.6 , W-CDMA, 3 GPP test model 1, 64 DPCH, 2 carriers, Clipping 100% f1 = 2.135 GHz f2 = 2.145 GHz ( f = 10 MHz) IM3, IDset = 2 A IM3, IDset = 3 A -35 -40 10 MHz -45 -50 10 MHz IM5, IDset = 2 A 10 MHz 10 MHz 10 MHz IM5, IDset = 3 A -55 -60 25 30 35 40 45 50 IM3@Bandwidth = 3.84 MHz IM5@Bandwidth = 3.84 MHz Average Output Power Pout (dBm) add vs. AVERAGE OUTPUT POWER (SET IDS DEPENDENCE) Power Added Efficiency add (%) 40 VDS= 12 V, IDset = 2 A Rg = 0.6 , W-CDMA, 3 GPP test model 1, 64 DPCH, 2 carriers, Clipping 100% f1 = 2.135 GHz f2 = 2.145 GHz (f = 10 MHz) 35 30 25 IDset = 2 A 20 15 10 IDset = 3 A 5 0 25 30 35 40 45 50 Average Output Power Pout (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PG10357EJ01V0DS 3 Adjacent Channel Leakage Power Ratio ACPR (dBc) NES1823M-180 ACPR vs. AVERAGE OUTPUT POWER (SET IDS DEPENDENCE) -25 VDS = 12 V, Rg = 0.6 , W-CDMA, 3 GPP test model 1, 64 DPCH, 1 carriers, Clipping 100% f = 2.14 GHz -30 -35 5 MHz, IDset = 2 A -40 -45 5 MHz, IDset = 3 A 10 MHz -50 -55 5 MHz 10 MHz, IDset = 2 A -60 -65 25 10 MHz, IDset = 3 A 30 35 40 45 50 Average Output Power Pout (dBm) f = 5 MHz, 10 MHz @Bandwidth = 3.84 MHz Remark The graphs indicate nominal characteristics. 4 10 MHz 5 MHz Data Sheet PG10357EJ01V0DS NES1823M-180 S-PARAMETERS S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] [Device Parameters] URL http://www.ncsd.necel.com/ Data Sheet PG10357EJ01V0DS 5 NES1823M-180 EVALUATION PWB CIRCUIT R3 C11 C15 C17 C21 L7 VGS C29 R1 C4 STB in L1 BALUN in (gnd) C7 C8 L5 L3 C12 C10 L2 C2 + C24 C26 C5 R2 STB in (L) BALUN in (sig) L4 OUTPUT (50 ) C14 G1 INPUT (50 ) BALUN out (sig) C18 Device in G2 D2 C9 D1 Device out C19 BALUN out (gnd) L6 C30 R5 L8 VGS C32 C28 VDS (12 V) C6 6 C31 STB out C1 R4 STB out (R) C25 STB out (L) + STB in (R) C23 VDS (12 V) + C27 + C3 R6 C13 C16 Data Sheet PG10357EJ01V0DS C20 C22 NES1823M-180 EVALUATION PWB PARTS LAYOUT Drain Bias (12 V) Gate Bias C27 C23 C29Note C31Note C25Note C15 C17 C11 C1 C3 R3 R4 R1 C7 C18 C9 C19 C10 R5 R6 C16 C20 C13 C5 C22 C6 R2 OUTPUT (50 ) B2 C14 C8 B1 C12 INPUT (50 ) C2 60 mm C4 C21 C24 C26Note C28 C30Note C32Note Gate Bias Drain Bias (12V) 69 mm 69 mm Note Feed-through capacitor Parts Value C12, C14 1 pF chip capacitor C4, C5, C11, C13 4 pF chip capacitor C18, C19 10 pF chip capacitor C7, C8, C9, C10 12 pF chip capacitor C15, C16 22 pF chip capacitor BALUN (An example of Assembly) 7 mm Parts Name 7 mm C1, C2, C3, C6 1 000 pF chip capacitor C25, C26, C29, C30, C31, C32 1 000 pF feed-through capacitor C17, C20 0.1 F chip capacitor C21, C22 10 F chip capacitor (25 V) C23, C24, C27, C28 100 F Electrolytic capacitor (25 V) R3, R4, R5, R6 2.2 chip resistor (1/4 W) R1, R2 10 chip resistor (1/4 W) B1, B2 BALUN Circuit Board 24.5 mm Material ; Teflon, Er = 2.6, PWB Thickness : 0.8 mm, Cu-Pattern Thickness : 18 m Data Sheet PG10357EJ01V0DS 7 NES1823M-180 PACKAGE DIMENSIONS 2.7 MIN. T-92M (UNIT: mm) 35.20.25 23.90.3 9.70.2 D1 8.00.2 D2 4.00.3 1.40.3 PIN CONNECTIONS G1, G2 : Gate D1, D2 : Drain S : Source Data Sheet PG10357EJ01V0DS 2.10.3 2.40.2 30.40.25 8 17.40.15 S S 2.7 MIN. 4-R1.3 G2 0.60.3 2.60.3 G1 5.7 MAX. 45 4-C1.5 NES1823M-180 RECOMMENDED MOUNTING CONDITIONS FOR CORRECT USE (1) Fix to a heat sink or mount surface completely with screws at the four holes of the flange. (2) The recommended torque strength of the screws is 29.4 Ncm typical using M2.3 type screws. (3) The recommended flatness of the mount surface is less than 10 m (roughness of surface is ). RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Partial Heating Soldering Conditions Condition Symbol Peak temperature (pin temperature) : 350C or below Soldering time (per pin of device) Maximum chlorine content of rosin flux (% mass) : 3 seconds or less : 0.2%(Wt.) or below HS350-P3 Caution Do not use different soldering methods together (except for partial heating). DEFINIITON OF THERMAL RESISTANCE This thermal resistance (Rth : channel to case) guaranteed in the electrical characteristics shows the value between chip surface and the backside surface of the package. The thermal resistance between chip surface and mount surface is 0.2 (MAX.) C/W larger than the thermal resistance value guaranteed in the electrical characteristics, when the package is under the above-mentioned recommendation mounting condition screwed down. Data Sheet PG10357EJ01V0DS 9 NES1823M-180 * The information in this document is current as of August, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 10 Data Sheet PG10357EJ01V0DS NES1823M-180 Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. * Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. * Do not burn, destroy, cut, crush, or chemically dissolve the product. * Do not lick the product or in any way allow it to enter the mouth. For further information, please contact NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/ E-mail: salesinfo@csd-nec.com (sales and general) techinfo@csd-nec.com (technical) 5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 NEC Compound Semiconductor Devices Hong Kong Limited E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) FAX: +852-3107-7309 TEL: +852-3107-7303 Hong Kong Head Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Taipei Branch Office FAX: +82-2-558-5209 TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-01 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0307