DESCRIPTION
The NES1823M-180 is a 180 W push-pul l type GaAs FET desig ne d for high po wer trans mitter applicati ons for IMT-
2000 base station systems. It is capable of delivering 180 W of output power (CW) with high linear gain, high
efficiency and excellent distortion under the condition of 12 V operation. Its primary band is 1.8 to 2.3 GHz. The
device employs 0.7
µ
m Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior
performance, thermal characteristics, and reliability.
FEATURES
• Push-pull type GaAs FET
• VDS = 12.0 V operation
• High output power: Pout = 180 W TYP.
• High linear gain: GL = 12.5 dB TYP.
• High power added efficiency:
η
add = 48% TYP. @ VDS = 12.0 V, IDset = 2.0 A (total), f = 2.17 GHz
• Hollow plastic package
ORDERING INFORMA T I O N
Part Number Package Supplying Form
NES1823M-180 T-92M ESD protective tray
Remark To order evaluation samples, contact your nearby sales office.
DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
GaAs FET
NES1823M-180
180 W L, S-BAND PUSH-PULL POWER GaAs FET
Document No. PG10357EJ01V0DS (1st edition)
Date Published August 2003 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2003
ABSOLUTE MAXIMUM RA TI NGS (TA = +25°C)
Operation in excess of any one of these param eters may result in permanent damage.
Parameter Symbol Ratings Unit
Drain to Source Voltage VDS 19 V
Gate to Source Voltage VGSO −7 V
Gate to Drain Voltage VGDO −26 V
Gate Current IG 900 mA
Total Power Dissipation Ptot 250 W
Channel Temperature Tch 175 °C
Storage Temperature Tstg −65 to +150 °C
Gain Compression (CW) Gcomp 3.0 dB
RECOMMENDED OPERATING LIMITS
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Drain to Source Voltage VDS − 12.0 12.0 V
Channel Temperature Tch − − +150 °C
Set Drain Current IDset VDS = 12.0 V, RF OFF − 3.0 6.0 A
Gate Resistance RgNote − 0.6 1.2 Ω
Note R
g is the series resistance between the gate supply and the FET gate.
R
g =
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Pinch-off Voltage Vp VDS = 2.5 V, ID = 650 mA −0.8 −0.5 −0.2 V
Thermal Resistance Rth Channel to Case − 0.30 0.40 °C/W
Output Power Pout f = 2.17 GHz CW, VDS = 12 V, 51.5 52.5 − dBm
Drain Current ID Pin = 43.0 dBm, Rg = 0.6 Ω, − 32 − A
Power Added Efficiency
η
add IDset = 2.0 A Total (RF OFF) Note − 48 − %
Linear Gain GL (GL : Pin = 31 dBm) 11.5 12.5 − dB
Note IDset = 1.0 A each drain
R
g1
R
g2
G
1
G
2
D
1
D
2
S
V
GS
V
GS
Rg1 × Rg2
Rg1 + Rg2
Data Sheet PG10357EJ01V0DS
2
NES1823M-180
TYPICAL CHARACTERISTICS (TA = +25°C)
14
11
12
13
8
10
2.2 2.42.32.12.01.9
Gain GL (dB)
Frequency f (GHz)
9
GAIN vs. FREQUNCY RESPONSE
VDS= 12 V, IDset = 2.0 A
Rg = 0.6 Ω, CW, Pin = 31 dBm
−20
−50
−30
−25
−60
−55
40 5045353025
3rd/5th Order Inter Modulation Distortion IM3/IM5 (dBc)
Average Output Power Pout (dBm)
−35
−40
−45
VDS= 12 V, IDset = 2 A
Rg = 0.6 Ω,
W-CDMA,
3 GPP test model 1, 64 DPCH,
2 carriers, Clipping 100%
f1 = 2.135 GHz
f2 = 2.145 GHz
( f = 10 MHz)
IM3, IDset = 2 A
IM3, IDset = 3 A
IM5, IDset = 2 A
IM5, IDset = 3 A
IM5@Bandwidth = 3.84 MHz
IM3@Bandwidth = 3.84 MHz
10 MHz 10 MHz
10 MHz 10 MHz
10 MHz
(SET I
DS
DEPENDENCE)
IM
3
/IM
5
vs. AVERAGE OUTPUT POWER
(SET I
DS
DEPENDENCE)
VDS= 12 V, IDset = 2 A
Rg = 0.6 Ω,
W-CDMA,
3 GPP test model 1, 64 DPCH,
2 carriers, Clipping 100%
f1 = 2.135 GHz
f2 = 2.145 GHz
( f = 10 MHz)
IDset = 2 A
IDset = 3 A
40
10
30
35
0
5
40 5045353025
Power Added Efficiency add (%)
Average Output Power Pout (dBm)
25
20
15
η
add
vs. AVERAGE OUTPUT POWER
η
VDS= 12 V, IDset = 2.0 A
Rg = 0.6 Ω, CW-signal,
f = 2.14 GHz
OUTPUT POWER,
add
Pout
55
40
35
50
20
25
100
0
20
40
60
80
35 4540302515
Output Power Pout (dBm)
Input Power Pin (dBm)
Power Added Efficiency
add (%)
η
add
η
η
vs. INPUT POWER
45
30
20
∆
∆
Remark The graphs indicate nominal characteristics.
Data Sheet PG10357EJ01V0DS 3
NES1823M-180
−25
−55
−35
−30
−65
−60
40 5045353025
Adjacent Channel Leakage Power Ratio ACPR (dBc)
Average Output Power P
out
(dBm)
−40
−45
−50
V
DS
= 12 V,
R
g
= 0.6 Ω,
W-CDMA,
3 GPP test model 1, 64 DPCH,
1 carriers, Clipping 100%
f = 2.14 GHz
5 MHz, I
Dset
= 2 A
(SET IDS DEPENDENCE)
A CPR
vs. AVERA GE OUTPUT POWER
5 MHz, I
Dset
= 3 A
10 MHz, I
Dset
= 2 A
10 MHz, I
Dset
= 3 A
5 MHz
10 MHz
5 MHz
10 MHz
f = 5 MHz, 10 MHz
@Bandwidth = 3.84 MHz
∆
Remark The graphs indicate nominal characteristics.
Data Sheet PG10357EJ01V0DS
4
NES1823M-180
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.ncsd.necel.com/
Data Sheet PG10357EJ01V0DS 5
NES1823M-180
EVALUATION PWB CIRCUIT
OUTPUT
(50 Ω)
STB out
C25
C23 +
C3 C11
R3
R4
C1 C4
R1
L1 L3
BALUN in (gnd)
INPUT
(50 Ω)
STB in
C7
C8 C9
C10
C12
STB in (R)
C26
C24
+
C6 C13
R6
R5
C2 C5
R2
L2 L4
BALUN in (sig)
STB in (L)
Device in
VGS
VGS
C29 C27
+
C21
C17
C15
BALUN out (sig)
C18
C19
C14
STB out (R)
C32 C28
+
C16
L6
BALUN out (gnd)
STB out (L)
Device out
VDS (12 V)
VDS (12 V)
L5
L7
C31
C20
L8
C22
C30
G1D1
G2D2
Data Sheet PG10357EJ01V0DS
6
NES1823M-180
EVALUATION PWB PARTS LAYOUT
B1 B2
Gate Bias
Gate Bias Drain Bias (12 V)
Drain Bias (12V)
INPUT
(50 Ω)
C26Note
C25Note C29Note C31Note
C32Note
C30Note
C6
C24
C2
R2
C5
R5
R6
C13
C23
C1
R1
C4
C3
R3
R4
C11
C7
C8
C9
C10
C12
C14
C15
C17
C21
C27
C18
C19
OUTPUT
(50 Ω)
C20
C16
C22
C28
60 mm
69 mm 69 mm
Note Feed-through capacitor
Parts Name Parts Value
C12, C14 1 pF chip capacitor
C4, C5, C11, C13 4 pF chip capacitor
C18, C19 10 pF chip capacitor
C7, C8, C9, C10 12 pF chip capacitor
C15, C16 22 pF chip capacitor
C1, C2, C3, C6 1 000 pF chip capacitor
C25, C26, C29, C30, C31, C32 1 000 pF feed-through capacitor
C17, C20 0.1
µ
F chip capacitor
C21, C22 10
µ
F chip capacitor (25 V)
C23, C24, C27, C28 100
µ
F Electrolytic capacitor (25 V)
R3, R4, R5, R6 2.2 Ω chip resistor (1/4 W)
R1, R2 10 Ω chip resistor (1/4 W)
B1, B2 BALUN
Circuit Board Material ; Teflon, Er = 2.6,
PWB Thickness : 0.8 mm,
Cu-Pattern Thickness : 18
µ
m
BALUN
(An example of Assembly)
24.5 mm
7 mm
7 mm
Data Sheet PG10357EJ01V0DS 7
NES1823M-180
PACKAGE DIMENSIONS
T-92M (UNIT: mm)
PIN CONNECTIONS
G1, G2
D1, D2
S
: Gate
: Drain
: Source
4.0±0.3 1.4±0.3
30.4±0.25
S
8.0±0.20.6±0.3 17.4±0.15
9.7±0.2
35.2±0.25
23.9±0.3
2.6±0.3
S
4–R1.3
4–C1.5
D1 D2
G1 G2
45˚
2.4±0.2
5.7 MAX.
2.1±0.3
2.7 MIN.2.7 MIN.
Data Sheet PG10357EJ01V0DS
8
NES1823M-180
RECOMMENDED MOUNTING CONDITIONS FOR CORRECT USE
(1) Fix to a heat sink or mount surface completely with screws at the four holes of the flange.
(2) The recommended torque stre ngth of the screws is 29.4 N⋅cm typical using M2.3 type screws.
(3) The recommended flatness of the mount surf ace is less than ±10
µ
m (roughness of surface is ∇∇∇).
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method Soldering Conditions Condition Symbol
Partial Heating Peak temperature (pin temperature) : 350°C or below
Soldering time (per pin of device) : 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
HS350-P3
Caution Do not use different soldering methods together (except for partial heating).
DEFINIITON OF THERMAL RESISTANCE
This thermal resistance (Rth : channel to case) guarante ed i n the electrical characteristics shows the v alue betwe e n
chip surface and the backside surface of the package.
The thermal resistance between chip surface and mount surface is 0.2 (MAX.) °C/W larger than the thermal
resistance value guaranteed in the electrical characteristics, when the package is under the above-mentioned
recommendation mounting condition screwed down.
Data Sheet PG10357EJ01V0DS 9
NES1823M-180
M8E 00. 4 - 0110
The information in this document is current as of August, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
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Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
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semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
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(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
•
•
•
•
•
•
Data Sheet PG10357EJ01V0DS
10
NES1823M-180
Caution GaAs Products This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general)
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
TEL: +852-3107-7303
TEL: +886-2-8712-0478
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FAX: +852-3107-7309
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FAX: +82-2-558-5209
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TEL: +49-211-6503-01 FAX: +49-211-6503-487
California Eastern Laboratories, Inc. http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
0307
NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/
E-mail: salesinfo@csd-nec.com (sales and general)
techinfo@csd-nec.com (technical)
5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579
For further information, please contact
NES1823M-180
