f 2, MOTOROLA SC IDIODES/OPTO} MOTOROLA m= SEMICONDUCTOR yyy TECHNICAL DATA 12cE D 5 6367255 0079843 Tg 1N5518A, B thru 1N5546A, B Tll-07 LOW VOLTAGE AVALANCHE SILICON OXIDE PASSIVATED ZENER REGULATOR DIODES Highly reliable silicon regulators utilizing an oxide-passivated junction for long-term voltage stability. Double stug construction provides a rugged, glass-enclosed, hermetically sealed structure. Low Zener Noise Specified Low Maximum Regulation Factor Low Zener impedance Low Leakage Current Controlted Forward Characteristics Temperature Range: -65 to + 200C LOW VOLTAGE AVALANCHE ZENER DIODES 400 MILLIWATTS 3.3 THRU 33 VOLTS MAXIMUM RATINGS Rating Symbol Value Unit DC Power Dissipation @ Ta = 50C Pp 400 mw Oerate above 50C 3.2 mw/ec DC Power Dissipation @ TL = 50C Pp 600 mw Lead Length = 1/8 Derate above 50C (Figure 1) 3.3 mw/c Operating and Storage Junction Ty.Tstg -65 to +200 % Temperature Range MECHANICAL CHARACTERISTICS CASE: Hermetically sealed, all-glass DIMENSIONS: See outline drawing. FINISH: All external surfaces are corrosion resistant and leads are readily solderable and weldable. POLARITY: Cathode indicated by polarity band. WEIGHT: 0.2 Gram (approx) MOUNTING POSITION: Any FIGURE 1 POWER-TEMPERATURE DERATING CURVE 08 HEATSINK Pp, MAXIMUM POWER DISSIPATION (WATTS) 2 2 Se nn ~ a o 8 & 60 4680) 6100 120 140160 188-200 Tr, LEAD TEMPERATURE (C) t rey Lo NOTES: 1, PACKAGE CONTOUR OPTIONAL WITHIN A AND 8. HEAT SLUGS, IF ANY, SHALL BE INCLUDED WITHIN THIS CYLINDER, BUT NOT SUBJECT TO THE MINIMUM LIMIT OF B. LEAD DIAMETER NOT CONTAOLLED IN ZONE F TO ALLOW FOR FLASH, LEAD FINISH BUILDUP ANG MINOR IAREGU- LARITIES OTHER THAN HEAT SLUGS. POLARITY DENOTED BY CATHODE BAND, . DIMENSIONING ANO TOLERANCING PER ANSI 14.5, 1973, n =P CASE 293-02 DO-204AH GLASS 4-55 AS S/0PTO}. abs MOTOROLA SC {DIODES/ T -1t-OG BE ? pbs? 0079864 1 + .. 4N5518A, B thru 1N5546A, B (Ta = 25C unless otherwise noted. Based on de measurements at thermal equilibrium; ELECTRICAL CHARACTERISTICS Ve = 1.1 Max @ If = 200 mA for all types) B-C-D Suffix B-C-D Suffix Max Noise Density} Nominal Max Zener Impedance | Max Reverse Leakage Current Maximum atlz = 250uA | Regulation | Low Zener Voltage Test B-C-D Suffix OC Zener Current Np Factor Vz JEDEC Vz@lzzp | Current 2z7 @ lzy Ir VR Volts tz (Figure 1) AVz Current! Type No. Volts lzr Ohms BAde | Non& A- | BC-D mAde (micro-volts per Volts tzu (Note 1) {Note 2} mAde {Note 3) (Nota 4) Suffix | Suffix (Note 5) square rootcycie)}| (Note6) | mAdc INSS18A 3.3 20 28 5.0 0.90 1.0 415 0.5 0.90 2.0 1N55194 3.6 20 24 3.0 0.90 1.0 105 0.5 0.90 2.0 1N5520A 3.9 20 2 1.0 0.90 1.0 98 0.5 0.85 2.0 INS5521A 43 20 18 3.0 1.0 15 88 0.5 0.75 2.0 1N55224, 47 10 2 2.0 1.6 2.0 81 0.5 0,60 1.9 INS5523A 5.1 5.0 2 2.0 2.0 2.5 75 0.5 0.65 0.25 IN5524A, 6.6 3.0 x2 2.0 3.0 3.5 68 1.0 0.30 0.25 1N5S25A, 6.2 1.0 30 1.0 45 5.0 61 1.0 0.20 0.01 iN5528A 6.8 4.0 x0 1.0 5.6 62 56 1.0 0.10 0.01 1IN5527A 76 4.0 & 0.5 6.0 6.8 $1 2.0 0.05 0.01 1N5528A 8.2 1.0 40 05 6.5 7S 46 4.0 0.05 0.01 INE529A 9.1 1.0 45 0.4 7.0 8.2 42 4.0 0.05 0.01 1N5530A, 10.0 1.0 60 0.06 8.0 9.1 38 4.0 0.40 0.01 1NSS3I1A 11.0 1.0 80 0.05 9.0 9.9 35 5.0 0.20 0.01 1N5532A 12.0 1.0 90 0.06 9.5 10.8 32 10 0.20 0.01 1N5533A 13.0 1.0 90 0.0 10.5 11.7 29 15 0.20 0.01 INS5534A 14.0 1.0 100 0.01 415 12.6 27 20 0.20 0.01 1N5535A 15.0 1.0 100 0.01 12.5 13.5 25 20 0.20 0.01 INSGISA 16.0 1.0 100 0.01 13.0 14.4 24 20 0.20 0.01 1NS537A, 17.0 1.0 100 0.01 14.0 15.3 22 20 0.20 0.01 1N55384 18.0 1.0 100 0.01 15.0 16.2 21 20 0.20 0.01 1N5539A 19.0 1.0 100 0.01 16.0 17.4 20 20 0.20 0.01 1N5540A 20.0 1.0 100 0.01 17.0 18.0 19 20 0.20 0.01 1INS541A 22.0 1.0 100 0.01 18.0 19.8 17 20 0.25 0.01 1N55424 24.0 1.0 100 0.01 20.0 21.6 16 20 0.30 0.01 TN5S43A, 25.0 1.0 100 0.01 21.0 22.4 15 20 0.35 0.01 1N5544A 28.0 1.0 100 0.01 23.0 28.2 14 20 0.40 0.01 INSS45A 30.0 1.0 100 0.0t 24.0 27.0 13 20 0.45 0.01 1N5548A 33.0 1.0 100 0.017 28.0 29.7 12 20 0.50 0.01 NOTE 1 TOLERANCE AND VOLTAGE DESIGNATION NOTE 4 REVERSE LEAKAGE CURRENT (Ip) The JEDEC type numbers shown are + 10% with guaranteed limits Reverse leakage currents are guaranteed and are measured at VR for Vz, IR, and Vg. Units with guaranteed limits for alt six parameters as shown on the table. are Indicated by a B" suffix for +6.0% units, C suffix for +2.0% and D suffix for + 1.0%. NOTE 5 MAXIMUM REGULATOR CURRENT (Iz) NOTE 2 ZENER VOLTAGE (Vz) MEASUREMENT The maximum current shown is based on the maximum voltage . . . wo: wo of a 5.0% type unit, therefore, it applies only to the 'B suffix Nominal zener voltage is measured with the device junction in device. The actual |z14 for any device may not exceed the value thermal equilibrium with ambiant temperature of 25C. of 400 milliwatts divided by the actual Vz of the davice. NOTE 3 ZENER IMPEDANCE (Zz) DERIVATION NOTE 6 - MAXIMUM REGULATION FACTOR (AVz) The zener impedance is derived from the 60 Hz ac voltage, which AVz is the maximum difference between Vz at Iz7 and Vz results when an ac current having an rms value equal to 10% of at 12, measured with the device junction in thermal equilibrium. the de zener currant (Iz7) is superimposed on Izy. 4-56 1N5518A, B thru 1N5546A, B MOTOROLA SC TDIODES/OPTOT IE N-OF LeE D Bf b3e7e5s OO?9445 3 i a ZENER NOISE DENSITY A zener diode generates noise whan it is biased in the zener direc- tion. A small part of this noise is due to the internal resistance asso- ciated with the device. A larger part of zener noise is a result of the zener breakdown phenomenon and is called microplasma noise. To eliminate the higher frequency components of noise a small shunting capacitor can be used. The lower frequency noise generally must be tolerated since a capacitor required to eliminate the lower frequencies would degrade the regulation properties of the zener in many applications. Motorola is rating this series with a maximum noise density at 250 microamperes, a bandwidth of 2.0 kHz and a center frequency of 2.0 kHz. Noise density decreases as zener current increases. The junction temperature will also change the zener noise levels, thus the noise rating must indicate frequency, bandwidth, current level and temperature. The block diagram shown In Figure 2 represents the method used to measure noise density. The input voltage and load resistance is high so that the zener is drivan from a constant current sources. The amplifier must be low noise so that the amplifier noise is negligible compared to the test zener. The filter frequency and bandpass Is known so that the noise density In volts RMS per square root cycle can be calculated. FIGURE 2 NOISE DENSITY MEASUREMENT METHOD AMMETER LOAD AMPLIFIER RESISTOR + DC POWER SUPPLY NOISE DENSITY (VOLTS PER SQUARE ROOT BANDWIOTH) = FILTER fo = 2.0 kHz t TRUE fr=LOw | Vou | your f)=3.0 ki ee ee Yost OVERALL GAIN BW WHERE: BW = FILTER BANDWIDTH (Hz) Vout = OUTPUT NOISE (VOLTS RMS) FIGURE 3 TYPICAL CAPACITANCE tp, FORWARD CURRENT (mA) o O4 0.5 06 07 0.8 09 1.0 if Vg, FORWARD VOLTAGE (VOLTS) FIGURE 4 TYPICAL FORWARD CHARACTERISTICS 1000 500 Ta = 25C 200 S Ss OV BIAS oy o ny oS C, CAPACITANCE (pF} S 5.0 10 2.0 5.0 10 20 50 100 Vz, ZENER VOLTAGE (VQLTS) 4-57 MOTOROLA SC {DIODES/OPTO} Jrpgguae Dd i 6367255 0798bb fj 1N5518A, B thru 1N5546A, B af FIGURE & ZENER DIODE CHARACTERISTICS AND SYMBOL IDENTIFICATION ORWARD CHARACTERISTIC _ ig (mA) ee Vz [ AEVERSE VOLTAGE Vz | (VOLTS) VA } A T I Wow LE i Ve (VOLTS! ! r Ff ) In@VR L -rioucqdia z fg _m _ REVERSE CHARACTERISTIC | (See table for | | 4 + 4 Iam specific values) 4-58