UMT4401 / SST4401 / MMST4401 / 2N4401
Transistors
NPN Medium Power Transistor
(Switching)
UMT4401 / SST4401 / MMST4401 / 2N4401
!Features
1) BVCEO>40V (IC=1mA)
2) Complements the UMT4403 / SST4403 / MMST4403
/ PN4403.
!
!!
!Package, marking, and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit (pieces)
UMT4401
UMT3
R2X
T106
3000
SST4401
SST3
R2X
T116
3000
MMST4401
SMT3
R2X
T146
3000
2N4401
TO-92
-
T93
3000
!
!!
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Tj
Tstg
Limits
60
40
6
0.6
0.625
150
-55~+150
Unit
V
V
V
A
Collector power
dissipation P
C
0.2 W
˚C
˚C
2N4401
UMT4401
SST4401
MMST4401
!
!!
!External dimensions (Units : mm)
UMT4401
SST4401
MMST4401
2N4401
0
~
0.1
0.2Min.
2.4
±
0.2
1.3
0.95
0.45
±
0.1
0.15
0.4
2.9
±
0.2
1.9
±
0.2
0.95 0.95
+0.2
−
0.1
−
0.1
+0.2
+0.1
−
0.06
+0.1
−
0.05
(2)
(1)
(3)
0~0.1
2.8
±
0.2
1.6
0.3
~
0.6
1.1
0.8
±
0.1
0.15
0.4
2.9
±
0.2
1.9
±
0.2
0.950.95
+0.2
−
0.1
−
0.1
+0.2
+0.1
−
0.06
+0.1
−
0.05
(2)
(1)
(3)
0
~
0.1
(2)(1)
(3)
0.1~0.4
2.1
±
0.1
1.25
±
0.1
0.9±0.1
0.2 0.7±0.1
0.15±0.05
0.3
2.0±0.2
1.3±0.1
0.65 0.65
+0.1
−0
4.8
±
0.2
(12.7Min.)
2.5Min.
4.8
±
0.2 3.7
±
0.2
50.45
±
0.1 2.3
0.5
±
0.1.
2.5+0.3
−
0.1
(1) (2) (3)
All terminals have the same
dimensions
All terminals have the same
dimensions
All terminals have the same
dimensions
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
(3) Collector
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
ROHM : TO-92
EIAJ : SC-43
(1) Emitter
(2) Base
(3) Collector
!
!!
!Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
BVCBO
BVCEO
BVEBO
ICBO
IEBO
60
40
6
-
-
-
-
-
-
-
-
-
-
0.1
0.1
V
V
V
µA
µA
IC
=
100µA
IC
=
1mA
IE
=
100µA
VCB
=
35V
VEB
=
5V
- - 1.2
Base-emitter saturation voltage VBE(sat) - - 0.95 V
- - 0.75 IC/IB
=
500mA/50mA
Collector-emitter saturation voltage VCE(sat) - - 0.4 VIC/IB
=
150mA/15mA
IC/IB
=
500mA/50mA
IC/IB
=
150mA/15mA
40 - -
100 - 300
DC current transfer ratio hFE 80 - - -
40 - -
20 - - VCE
=
1V, IC
=
0.1mA
VCE
=
1V, IC
=
1mA
VCE
=
1V, IC
=
10mA
VCE
=
1V, IC
=
150mA
VCE
=
2V, IC
=
500mA
Transition frequency
Collector output capacitance fT
Cob 250
--
--
6.5 MHz
pF VCE
=
10V, IE
=-
20mA, f
=
100MHz
VCB
=
10V, f
=
100kHz
Emitter input capacitance Cib - - 30 pF VEB
=
0.5V, f
=
100kHz
Delay time td - - 15 ns VCC
=
30V, VEB(OFF)
=
2V, IC
=
150mA, IB1
=
15mA
VCC
=
30V, VEB(OFF)
=
2V, IC
=
150mA, IB1
=
15mA
Rise time tr - - 20 ns
Storage time tstg - - 225 ns VCC
=
30V, IC
=
150mA, IB1
=-
IB2
=
15mA
VCC
=
30V, IC
=
150mA, IB1
=-
IB2
=
15mA
Fall time tf - - 30 ns
UMT4401 / SST4401 / MMST4401 / 2N4401
Transistors
!
!!
!Electrical characteristic curves
0
50
100
100 5
I
B
=0µA
100
200
400
500
600
300
Ta=25°C
COLLECTOR CURRENT : Ic(mA)
COLLECTOR-EMITTER VOLTAGE : V
CE
(V)
Fig.1 Grounded emitter output
characteristics
0.1 101.0 100 1000
100
1000
10
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : Ic(mA)
Ta
=25°C
V
CE
=
10V
1V
Fig.3 DC current gain vs. collector current(Ι)
1.0 10 100 1000
0.2
0.3
0.1
0
COLLECTOR EMITTER SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : Ic(mA)
Ta=25°C
IC / IB=10
Fig.2 Collector-emitter saturation
voltage vs. collector current
0.1 101.0 100 1000
100
1000
10
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : Ic(mA)
Ta
=125°C
V
CE
=
10V
25
°C
−55
°C
Fig.4 DC current gain vs. collector current(ΙΙ)
0.1 101.0 100 1000
100
1000
10
AC CURRENT GAIN : h
FE
COLLECTOR CURRENT : Ic(mA)
Ta
=25°C
V
CE
=
10V
f
=
1kHz
Fig.5 AC current gain vs. collector current
1.0 10 100 1000
0.8
1.2
1.8
1.6
0.4
0
BASE EMITTER SATURATION VOLTAGE : VBE(sat)
(V)
COLLECTOR CURRENT : Ic(mA)
Ta=25°C
I
C
/ I
B
=10
Fig.6 Base-emitter saturation
voltage vs. collector current
UMT4401 / SST4401 / MMST4401 / 2N4401
Transistors
1 10 100 1000
0.8
1.2
1.8
1.6
0.4
0
BASE EMITTER VOLTAGE : V
BE(ON)
(V)
COLLECTOR CURRENT : Ic(mA)
Ta
=25°C
VCE
=
10V
Fig.7 Grounded emitter propagation
characteristics
1.0 10 100 1000
100
1000
10
TURN ON TIME : ton(ns)
COLLECTOR CURRENT : Ic(mA)
Ta
=25°C
I
C
/ I
B
=
10
V
CC
=
30V
10V
Fig.8 Turn-on time vs. collector
current
1.0 10 100 1000
100
500
5
10
RISE TIME : tr(ns)
COLLECTOR CURRENT : Ic(mA)
Ta
=25°C
V
CC
=
30V
I
C
/ I
B
=
10
Fig.9 Rise time vs. collector
current
1.0 10 100 1000
100
1000
10
STORAGE TIME : ts(ns)
COLLECTOR CURRENT : Ic(mA)
Ta
=25°C
V
CC
=
30V
I
C
=
10I
B1
=
10I
B2
Fig.10 Storage time vs. collector
current
1.0 10 100 1000
100
1000
10
FALL TIME : tf(ns)
COLLECTOR CURRENT : Ic(mA)
Ta
=25°C
V
CC
=
30V
I
C
=
10I
B1
=
10I
B2
Fig.11 Fall time vs. collector
current
0.1 1.0 10 100
10
100
1
CAPACITANCE(pF)
REVERSE BIAS VOLTAGE(V)
Ta
=25°C
f
=
1MHz
Cib
Cob
Fig.12 Input / output capacitance
vs. voltage
110 100 1000
10
1
100
0.1
COLLECTOR-EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : Ic(mA)
Ta
=
25
°
C
100MHz
200MHz
250MHz 300MHz
250MHz
Fig.13 Gain bandwidth product
1.0 10 100 1000
100
1000
10
CURRENT GAIN-BANDWIDTH PRODUCT
(MHz)
COLLECTOR CURRENT : Ic(mA)
Ta
=25°C
V
CE
=
10V
Fig.14 Gain bandwidth product
vs. collector current
