1
FMP10N60E FUJI POWER MOSFET
Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET
Features
Maintains both low power loss and low noise
Lower RDS (on) characteristic
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (3.0±0.5V)
High avalanche durability
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description Symbol Characteristics Unit Remarks
Drain-Source Voltage V
DS
600 V
V
DSX
600 V V
GS
= -30V
Continuous Drain Current I
D
±10 A
Pulsed Drain Current I
DP
±40 A
Gate-Source Voltage V
GS
±30 V
Repetitive and Non-Repetitive Maximum AvalancheCurrent I
AR
10 A Note*1
Non-Repetitive Maximum Avalanche Energy E
AS
416 mJ Note*2
Repetitive Maximum Avalanche Energy E
AR
16.5 mJ Note*3
Peak Diode Recovery dV/dt dV/dt 4.4 kV/µs Note*4
Peak Diode Recovery -di/dt -di/dt 100 A/µs Note*5
Maximum Power Dissipation P
D
2.02 W Ta=25°C
165 Tc=25°C
Operating and Storage Temperature range T
ch
150 °C
T
stg
-55 to + 150 °C
Isolation Voltage V
ISO
2 kVrms t = 60sec, f = 60Hz
Outline Drawings [mm]
Equivalent circuit schematic
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description Symbol Conditions min. typ. max. Unit
Drain-Source Breakdown Voltage BV
DSS
I
D
=250µA, V
GS
=0V 600 - - V
Gate Threshold Voltage V
GS
(th) I
D
=250µA, V
DS
=V
GS
2.5 3.0 3.5 V
Zero Gate Voltage Drain Current I
DSS
V
DS
=600V, V
GS
=0V T
ch
=25°C - - 25 µA
V
DS
=480V, V
GS
=0V T
ch
=125°C - - 250
Gate-Source Leakage Current I
GSS
V
GS
=±30V, V
DS
=0V - 10 100 nA
Drain-Source On-State Resistance R
DS
(on) I
D
=5A, V
GS
=10V - 0.675 0.79 Ω
Forward Transconductance g
fs
I
D
=5A, V
DS
=25V 6 12 - S
Input Capacitance Ciss VDS =25V
VGS=0V
f=1MHz
- 1800 2700
pFOutput Capacitance Coss - 140 210
Reverse Transfer Capacitance Crss - 10.5 16
Turn-On Time td(on) Vcc =300V
V
GS
=10V
I
D
=5A
R
G
=15Ω
- 20 30
ns
tr - 9 13.5
Turn-Off Time td(off) - 100 150
tf - 18 27
Total Gate Charge Q
G
V
cc
=300V
I
D
=10A
V
GS
=10V
- 47 70.5
nCGate-Source Charge Q
GS
- 10.5 16
Gate-Drain Charge Q
GD
- 13.5 20
Avalanche Capability I
AV
L=3.05mH, T
ch
=25°C 10 - - A
Diode Forward On-Voltage V
SD
I
F
=10A, V
GS
=0V, T
ch
=25°C - 0.86 1.30 V
Reverse Recovery Time trr I
F
=10A, V
GS
=0V
-di/dt=100A/µs, Tch=25°C
- 0.51 - µS
Reverse Recovery Charge Qrr - 5.4 - µC
Note *1 : Tch≤150°C
Note *2 : Stating Tch=25°C, I
AS
=4A, L=47.7mH, Vcc=60V, R
G
=50Ω
E
AS
limited by maximum channel temperature and avalanche current.
See to 'Avalanche Energy' graph.
Thermal Characteristics
Description Symbol Test Conditions min. typ. max. Unit
Thermal resistance Rth (ch-c) Channel to Case 0.758 °C/W
Rth (ch-a) Channel to Ambient 62.0 °C/W
Gate(G)
Source(S)
Drain(D)
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Transient Themal impeadance' graph.
Note *4 : I
F
≤-I
D
, -di/dt=100A/μs, Vcc≤BV
DSS
, Tch≤150°C.
Note *5 : I
F
≤-I
D
, dv/dt=4.4kV/μs, Vcc≤BV
DSS
, Tch≤150°C.
TO-220AB
2
FMP10N60E
2
FUJI POWER MOSFET
0 5 10 15 20
0
5
10
15
20 20V
ID [A]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
10V
5.0V
6.0V
4.5V
VGS=4.0V
2 3 4 5 6
10-4
10-3
10-2
10-1
100
101
ID[A]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C
0.01 0.1 1 10 100
0.01
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C
0 5 10 15 20
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
4.5V
RDS(on) [ Ω]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25 °C
10V
6V
20V
5V
VGS=4.0V
0 25 50 75 100 125 150
0
20
40
60
80
100
120
140
160
180
200
Allowable Power Dissipation
PD=f(Tc)
PD[W]
Tc [°C]
10-1 100101102103
10-2
10-1
100
101
102
DC
t
PD
Powe r loss wa veform :
Square waveform
t
PD
t
PD
Powe r loss wa veform :
Square waveform
ID [A]
VDS [V]
Safe Operating Area
ID=f(VDS):Duty=0(Single pulse),Tc=25 °c
t=
1µs
10µs
1ms
100µs
3
3
FUJI POWER MOSFET
FMP10N60E
-50 -25 0 25 50 75 100 125 150
0
1
2
3
4
5
6
typ.
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
VGS(th)[V]
Tch [°C]
0 10 20 30 40 50 60 70 80
0
2
4
6
8
10
12
14
16
18
20
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=10A,Tch=25 °C
VGS [V]
480V
300V
Vcc= 120V
10-2 10-1 100101102
100
101
102
103
104
C [pF]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50
0.01
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25 °C
10-1 100101102
100
101
102
103
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=15 Ω
td(on)
tr
tf
td(off)
t[ns]
ID [A]
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
RDS(on)[Ω]
Tch [°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=5A,VGS=10V
4
FMP10N60E
4
FUJI POWER MOSFET
0 25 50 75 100 125 150
0
100
200
300
400
500
600
IAS=4A
IAS=6A
IAS=10A
EAV [mJ]
starting Tch [°C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=60V,I(AV)<=10A
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zth(ch- c) [°C/ W]
t [sec]
5
5
FUJI POWER MOSFET
FMP10N60E
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either
express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device
Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or
warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.
3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor
products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take
adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products
become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.
4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has
normal reliability requirements.
• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.
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such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's
product incorporated in the equipment becomes faulty.
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• Medical equipment
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No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device
Technology Co., Ltd.
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accordance with instructions set forth herein.
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