Semiconductor Group 307/96
BUZ 330
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
VDS
≥
2 * ID * RDS(on)max, ID = 6 A
gfs 5 9.3 -
S
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Ciss - 1700 2300
pF
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Coss - 220 330
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss - 95 140
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Ω
td(on)
- 23 45
ns
Rise time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Ω
tr
- 95 145
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Ω
td(off)
- 340 450
Fall time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Ω
tf
- 110 150