BC846 ... BC850 BC846 ... BC850 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren fur die Oberflachenmontage NPN NPN Version 2012-01-02 Power dissipation - Verlustleistung 1.1 2.9 0.1 0.4 Plastic case Kunststoffgehause 1 1.30.1 2.5 max 3 Type Code 250 mW 2 1.9 Dimensions - Mae [mm] 1=B 2=E 3=C SOT-23 (TO-236) Weight approx. - Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) BC846 BC847 BC850 BC848 BC849 Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open VCEO 65 V 45 V 45 V 30 V Collector-Base-voltage - Kollektor-Basis-Spannung E open VCBO 80 V 50 V 50 V 30 V Emitter-Base-voltage - Emitter-Basis-Spannung C open VEBO 6V 5V 1 Power dissipation - Verlustleistung Ptot 250 mW ) Collector current - Kollektorstrom (dc) IC 100 mA Peak Collector current - Kollektor-Spitzenstrom ICM 200 mA Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Tj TS -55...+150C -55...+150C Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. DC current gain - Kollektor-Basis-Stromverhaltnis VCE = 5 V, IC = 10 A Group A Group B Group C hFE hFE hFE - - - 90 150 270 - - - VCE = 5 V, IC = 2 mA Group A Group B Group C hFE hFE hFE 110 200 420 180 290 520 220 450 800 VCEsat VCEsat - - 90 mV 200 mV 250 mV 600 mV VBEsat VBEsat - - 700 mV 900 mV - - Collector-Emitter saturation voltage - Kollektor-Sattigungsspannung 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-Emitter saturation voltage - Basis-Sattigungsspannung 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% (c) Diotec Semiconductor AG http://www.diotec.com/ 1 BC846 ... BC850 Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. VBE VBE 580 mV - 660 mV - 700 mV 720 mV ICBO ICBO - - - - 15 nA 5 A IEBO - - 100 nA fT - 300 MHz - CCBO - 3.5 pF 6 pF CEBO - 9 pF - Base-Emitter-voltage - Basis-Emitter-Spannung 2) VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 10 mA Collector-Base cutoff current - Kollektor-Basis-Reststrom VCB = 30 V, (E open) VCE = 30 V, Tj = 125C, (E open) Emitter-Base cutoff current VEB = 5 V, (C open) Gain-Bandwidth Product - Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 10 V, IE =ie = 0, f = 1 MHz Emitter-Base Capacitance - Emitter-Basis-Kapazitat VEB = 0.5 V, IC = ic = 0, f = 1 MHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft RthA Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Marking of available current gain groups Stempelung der lieferbaren Stromverstarkungsgruppen 2 1 2 < 420 K/W 1) BC856 ... BC860 BC846A = 1A BC846B = 1B BC847A = 1E BC847B = 1F BC847C = 1G BC848A = 1E BC848B = 1F BC848C = 1G BC850B = 1F BC850C = 1G BC849B = 1F BC849C = 1G Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG