SMAJ530 & SMAJ550 Vishay General Semiconductor Surface Mount TRANSZORB(R) Transient Voltage Suppressors FEATURES * Glass passivated chip junction * Available in uni-directional polarity only * Excellent clamping capability * Very fast response time * Low incremental surge resistance * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * Solder dip 260 C, 40 s DO-214AC (SMA) * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC PRIMARY CHARACTERISTICS VBR 530 V, 550 V PPPM 300 W PD 2.5 W IFSM 40 A TJ max. 150 C TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, high reliability/ automotive grade (AEC Q101 qualified) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end APPLICATION NOTES * Respect thermal resistance (PCB Layout) - as the temperature coefficient also contributes to the clamping voltage * Select minimum breakdown voltage, so you get acceptable power dissipation and PCB tie point temperature * Devices with higher breakdown voltage will have a shorter conduction time and will dissipate less power * Clamping voltage is influenced by internal resistance - design approximation is 7 V per 100 mA slope * Keep temperature of TVS lower than TOPSwitch(R) as a recommendation * Maximum current is determined by the maximum TJ and can be higher than 300 mA * Contact supplier for different clamping voltage/ current arrangements * Minimum breakdown voltage can be customized for other applications. Contact supplier * TOPSwitch is a registered trademark of Power Integrations, Inc. MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Device marking code SMAJ550 HD Power dissipation on infinite heatsink (3) Peak pulse power SMAJ530 dissipation (1)(2)(4) PD (Fig. 1) VWM Operating junction and storage temperature range TJ, TSTG SB 2.5 PPPM Stand-off voltage W 300 477 UNIT W 495 - 55 to + 150 V C Notes: (1) Non repetitive current pulse per Fig. 3 and derated above 25 C per Fig. 2 (2) Mounted on 5.0 mm2 copper pads to each terminal (3) Lead temperature at TL = 75 C (4) Peak pulse power waveform is 10/1000 s Document Number: 88391 Revision: 21-Oct-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 SMAJ530 & SMAJ550 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL SMAJ530 530 Minimum breakdown voltage 100 A VBR Max. clamping voltage 400 mA, 10/1000 s-waveform VC Maximum DC reverse leakage current VWM ID Typical temperature coefficient of VBR Typical capacitance (1) SMAJ550 UNIT 550 V 760 V 1.0 A 650 mV/C 0V CJ 90 pF 200 V CJ 7.5 pF Note: (1) Measured at 1 MHz THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance, junction to lead Typical thermal resistance, junction to ambient (1) SMAJ530 SMAJ550 UNIT RJL 30 C/W RJA 120 C/W Note: (1) Mounted on minimum recommended pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SMAJ530-E3/61 0.064 61 1800 7" diameter plastic tape and reel SMAJ530-E3/5A 0.064 5A 7500 13" diameter plastic tape and reel SMAJ530HE3/61 (1) 0.064 61 1800 7" diameter plastic tape and reel SMAJ530HE3/5A (1) 0.064 5A 7500 13" diameter plastic tape and reel Note: (1) Automotive grade AEC Q101 qualified PPPM - Peak Pulse Power (kW) 100 Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25 C 10 1 0.1 0.1 s 1.0 s 10 s 100 s 1.0 ms 10 ms Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 100 75 50 25 0 0 25 50 75 100 125 150 175 200 td - Pulse Width (s) TJ - Initial Temperature (C) Figure 1. Peak Pulse Power Rating Curve Figure 2. Pulse Power or Current vs. Initial Junction Temperature www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88391 Revision: 21-Oct-08 SMAJ530 & SMAJ550 Vishay General Semiconductor IPPM - Peak Pulse Current, % IRSM 150 TJ = 25 C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 s Peak Value IPPM 100 Half Value - IPP IPPM 2 50 10/1000 s Waveform as defined by R.E.A. td 0 0 1.0 3.0 2.0 4.0 t - Time (ms) Figure 3. Pulse Waveform PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Document Number: 88391 Revision: 21-Oct-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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