SMAJ550-E3/61 - VISHAY SEMICONDUCTOR

SMAJ530 & SMAJ550

Vishay General Semiconductor

Document Number: 88391

Revision: 21-Oct-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

Surface Mount TRANSZORB® Transient Voltage Suppressors

FEATURES

• Glass passivated chip junction

• Available in uni-directional polarity only

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

APPLICATION NOTES

• Respect thermal resistance (PCB Layout) - as the

temperature coefficient also contributes to the

clamping voltage

• Select minimum breakdown voltage, so you get

acceptable power dissipation and PCB tie point

temperature

• Devices with higher breakdown voltage will have a

shorter conduction time and will dissipate less

power

• Clamping voltage is influenced by internal resistance

- design approximation is 7 V per 100 mA slope

• Keep temperature of TVS lower than TOPSwitch®

as a recommendation

• Maximum current is determined by the maximum

TJ and can be higher than 300 mA

• Contact supplier for different clamping voltage/

current arrangements

• Minimum breakdown voltage can be customized for

other applications. Contact supplier

• TOPSwitch is a registered trademark of Power

Integrations, Inc.

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and

lighting on ICs, MOSFET, signal lines of sensor units

for consumer, computer, industrial, automotive and

telecommunication.

MECHANICAL DATA

Case: DO-214AC (SMA)

Molding compound meets UL 94 V-0 flammability

rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, high reliability/

automotive grade (AEC Q101 qualified)

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3

suffix meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

PRIMARY CHARACTERISTICS

VBR 530 V, 550 V

PPPM 300 W

PD2.5 W

IFSM 40 A

TJ max. 150 °C

DO-214AC (SMA)

Notes:

(1) Non repetitive current pulse per Fig. 3 and derated above 25 °C per Fig. 2

(2) Mounted on 5.0 mm2 copper pads to each terminal

(3) Lead temperature at TL = 75 °C

(4) Peak pulse power waveform is 10/1000 µs

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL SMAJ530 SMAJ550 UNIT

Device marking code HD SB

Power dissipation on infinite heatsink (3) PD2.5 W

Peak pulse power dissipation (1)(2)(4) (Fig. 1) PPPM 300 W

Stand-off voltage VWM 477 495 V

Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C

SMAJ530 & SMAJ550

Vishay General Semiconductor

www.vishay.com For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Document Number: 88391

Revision: 21-Oct-08

Note:

(1) Measured at 1 MHz

Note:

(1) Mounted on minimum recommended pad layout

Note:

(1) Automotive grade AEC Q101 qualified

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL SMAJ530 SMAJ550 UNIT

Minimum breakdown voltage 100 µA VBR 530 550 V

Max. clamping voltage 400 mA, 10/1000 µs-waveform VC 760 V

Maximum DC reverse leakage current VWM ID 1.0 µA

Typical temperature coefficient of VBR 650 mV/°C

Typical capacitance (1) 0 V CJ 90 pF

200 V CJ 7.5 pF

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL SMAJ530 SMAJ550 UNIT

Typical thermal resistance, junction to lead RθJL 30 °C/W

Typical thermal resistance, junction to ambient (1) RθJA 120 °C/W

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

SMAJ530-E3/61 0.064 61 1800 7" diameter plastic tape and reel

SMAJ530-E3/5A 0.064 5A 7500 13" diameter plastic tape and reel

SMAJ530HE3/61 (1) 0.064 61 1800 7" diameter plastic tape and reel

SMAJ530HE3/5A (1) 0.064 5A 7500 13" diameter plastic tape and reel

Figure 1. Peak Pulse Power Rating Curve

0.1

100

PPM

- Peak Pulse Power (kW)

td - Pulse Width (s)

Non-Repetitive Pulse

Waveform shown in Fig. 3

TA = 25 °C

0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms

Figure 2. Pulse Power or Current vs. Initial Junction Temperature

0 255075100

100

125 150 175 200

TJ - Initial Temperature (°C)

Peak Pulse Power (P

) or Current (I

)

Derating in Percentage, %

SMAJ530 & SMAJ550

Vishay General Semiconductor

Document Number: 88391

Revision: 21-Oct-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Figure 3. Pulse Waveform

100

150

= 10 µs

Peak Value

IPPM

Half Value -

IPPM

10/1000 µs Waveform

as defined by R.E.A.

01.0 2.0 3.0 4.0

t - Time (ms)

PPM

- Peak Pulse Current, % I

RSM

= 25 °C

Pulse Width (t

)

is defined as the Point

where the Peak Current

decays to 50 % of I

PPM

0.030 (0.76)

0.060 (1.52)

0.008 (0.203)

0.194 (4.93)

0.208 (5.28)

0.157 (3.99)

0.177 (4.50)

0.100 (2.54)

0.110 (2.79)

0.078 (1.98)

0.090 (2.29)

0.006 (0.152)

0.012 (0.305)

0.049 (1.25)

0.065 (1.65)

Cathode Band

0 (0)

DO-214AC (SMA)

Mounting Pad Layout

0.074 (1.88)

MAX.

0.208 (5.28)

REF.

0.066 (1.68)

MIN.

0.060 (1.52)

MIN.

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Revision: 12-Mar-12 1Document Number: 91000

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