© Semiconductor Components Industries, LLC, 2013
January, 2013 − Rev. 6
1Publication Order Number:
DAN222M3/D
DAN222M3T5G
Common Cathode Silicon
Dual Switching Diode
This Common Cathode Silicon Epitaxial Planar Dual Diode is
designed for use in ultra high speed switching applications. This
device is housed in the SOT−723 package which is designed for low
power surface mount applications, where board space is at a premium.
Features
•Fast trr
•Low CD
•Available in 4 mm Tape and Reel
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Value Unit
Reverse Voltage VR80 V
Peak Reverse Voltage VRM 80 V
Forward Current IF100 mA
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Power Dissipation PD260 mW
Junction Temperature TJ150 °C
Storage Temperature Range Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. t = 1.0 mS.
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Device Package Shipping†
ORDERING INFORMATION
DAN222M3T5G SOT−723
(Pb−Free)
8000/Tape & Reel
CATHODE
3
12
ANODE
SOT−723
CASE 631AA
STYLE 3
MARKING
DIAGRAM
1
2
3
N9 M
N9 = Specific Device Code
M = Date Code
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
DAN222M3T5G
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Symbol Condition Min Max Unit
Reverse Voltage Leakage Current (Note 2) IRVR = 70 V −0.1 mA
Forward Voltage VFIF = 100 mA −1.2 V
Reverse Breakdown Voltage VRIR = 100 mA80 −V
Diode Capacitance CDVR = 6.0 V, f = 1.0 MHz −3.5 pF
Reverse Recovery Time (Note 3) trr IF = 5.0 mA, VR = 6.0 V,
RL = 100 W, Irr = 0.1 IR
−4.0 ns
2. For each diode while other is not forward biased.
3. trr Test Circuit on following page.
TYPICAL ELECTRICAL CHARACTERISTICS
100
0.2 0.4
VF, FORWARD VOLTAGE (VOLTS)
0.6 0.8 0.9 1.0
10
1.0
0.01
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40 80
Figure 1. Forward Voltage Figure 2. Reverse Current
Figure 3. Diode Capacitance
+150°C
+125°C
+85°C
+55°C
+25°C
TA = 150°C
-40°C
125°C
0.80
0
0.70
0.60
0.50
0.40 5101520
VR, REVERSE VOLTAGE (VOLTS)
0.1
0.1 0.3 0.5 0.7
-55°C
25°C
50 60 70
IR, REVERSE CURRENT (mA)
IF, FORWARD CURRENT (mA)
0.75
0.65
0.55
0.45
CD, DIODE CAPACITANCE (pF)
DAN222M3T5G
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3
Pulse Generator
trtp
t
10%
90%
VRtp = 100 ns
tr = 0.4 ns
f = 5 kHz
VR = 6 V
IF
trr
t
Irr = 0.1 IR
IF = 5.0 mA
VR = 6 V
RL = 100 W
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE OUTPUT PULSE
Figure 4. Reverse Recovery Time Test Circuit
50 W Scope
0.1 mF
510
100
DUT
+
IF
DAN222M3T5G
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4
PACKAGE DIMENSIONS
SOT−723
CASE 631AA
ISSUE D
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
DIM MIN NOM MAX
MILLIMETERS
A0.45 0.50 0.55
b0.15 0.21 0.27
b1 0.25 0.31 0.37
C0.07 0.12 0.17
D1.15 1.20 1.25
E0.75 0.80 0.85
e0.40 BSC
H1.15 1.20 1.25
L
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
D
b1
E
b
e
A
L
C
H
−Y−
−X−
X0.08 Y
2X
E
12
3
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
L2 0.15 0.20 0.25
0.29 REF
3X
L2
3X
1
2X
TOP VIEW
BOTTOM VIEW
SIDE VIEW
RECOMMENDED
DIMENSIONS: MILLIMETERS
0.40
1.50
2X
PACKAGE
OUTLINE
0.27
2X
0.52
3X 0.36
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DAN222M3/D
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