© Semiconductor Components Industries, LLC, 2016
September, 2016 − Rev. 16 1Publication Order Number:
MJD31/D
MJD31 (NPN), MJD32 (PNP)
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
•Lead Formed for Surface Mount Applications in Plastic Sleeves
•Straight Lead Version in Plastic Sleeves (“1” Suffix)
•Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
•Electrically Similar to Popular TIP31 and TIP32 Series
•Epoxy Meets UL 94, V−0 @ 0.125 in
•NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating Symbol Max Unit
Collector−Emitter Voltage
MJD31, MJD32
MJD31C, MJD32C
VCEO 40
100
Vdc
Collector−Base Voltage
MJD31, MJD32
MJD31C, MJD32C
VCB 40
100
Vdc
Emitter−Base Voltage VEB 5.0 Vdc
Collector Current − Continuous IC3.0 Adc
Collector Current − Peak ICM 5.0 Adc
Base Current IB1.0 Adc
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD15
0.12
W
W/°C
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
PD1.56
0.012
W
W/°C
Operating and Storage Junction Temperature
Range TJ, Tstg −65 to
+150 °C
ESD − Human Body Model HBM 3B V
ESD − Machine Model MM C V
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 8.3 °C/W
Thermal Resistance, Junction−to−Ambient* RqJA 80 °C/W
Lead Temperature for Soldering Purposes TL260 °C
*These ratings are applicable when surface mounted on the minimum pad sizes recommended.
SILICON
POWER TRANSISTORS
3 AMPERES
40 AND 100 VOLTS
15 WATTS
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
ORDERING INFORMATION
IPAK
CASE 369D
STYLE 1
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAMS
A = Site Code
Y = Year
WW = Work Week
xx = 1, 1C, 2, or 2C
G = Pb−Free Package
AYWW
J3xxG YWW
J3xxG
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DPAK IPAK
4
123
4
123
1
BASE
3
EMITTER
COLLECTOR
2,4
1
BASE
3
EMITTER
COLLECTOR
2,4
COMPLEMENTARY
MJD31 (NPN), MJD32 (PNP)
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2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0)
MJD31, MJD32
MJD31C, MJD32C
VCEO(sus)
40
100 −
−
Vdc
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
MJD31, MJD32
(VCE = 60 Vdc, IB = 0)
MJD31C, MJD32C
ICEO
−
−
50
50
mAdc
Collector Cutoff Current
(VCE = Rated VCEO, VEB = 0) ICES − 20 mAdc
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0) IEBO − 1 mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1 Adc, VCE = 4 Vdc)
(IC = 3 Adc, VCE = 4 Vdc)
hFE 25
10 −
50
Collector−Emitter Saturation Voltage
(IC = 3 Adc, IB = 375 mAdc) VCE(sat) − 1.2 Vdc
Base−Emitter On Voltage
(IC = 3 Adc, VCE = 4 Vdc) VBE(on) − 1.8 Vdc
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz) fT3 − MHz
Small−Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz) hfe 20 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
2. fT = ⎪hfe⎪• ftest.
MJD31 (NPN), MJD32 (PNP)
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3
25
25
Figure 1. Power Derating
T, TEMPERATURE (°C)
050 75 100 125 150
20
15
10
5
PD, POWER DISSIPATION (WATTS)
Figure 2. Switching Time Test Circuit
3
0.03
IC, COLLECTOR CURRENT (AMPS)
0.03 0.05 0.07 0.1 0.2 0.5 0.7
IB1 = IB2
IC/IB = 10
ts′ = ts - 1/8 tf
TJ = 25°C
t, TIME (s)μ
0.3
2
1
0.7
0.5
0.3
ts′
0.2
0.1
0.07
0.05
12
Figure 3. Turn−On Time
2
IC, COLLECTOR CURRENT (AMPS)
0.02
IC/IB = 10
TJ = 25°C
t, TIME (s)μ
1
0.7
0.5
0.3
0.1
0.07
0.05
0.03
+11 V
25 ms
0
-9 V
RB
-4 V
D1
SCOPE
VCC
+30 V
RC
tr, tf ≤ 10 ns
DUTY CYCLE = 1%
51
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
REVERSE ALL POLARITIES FOR PNP.
0.03 0.07 0.3 30.1 0.7
0.05 0.5 1
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VBE(off) = 2 V
tf @ VCC = 30 V
tf @ VCC = 10 V
2.5
0
2
1.5
1
0.5
TATC
Figure 4. Turn−Off Time
TA (SURFACE MOUNT)
TC
TYPICAL CHARACTERISTICS
Figure 5. Thermal Response
0.000001 0.0010.0001 0.1
100
1
0.01 0.01
t, PULSE TIME (sec)
R
qJA
(
°
C/W)
110100 1000
0.1
10
0.00001
0.2
Single Pulse
0.1
0.05
0.02
0.01
Duty Cycle = 0.5
MJD31 (NPN), MJD32 (PNP)
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4
TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)
1
10
100
1000
0.01 0.1 1 10
IC, COLLECTOR CURRENT (A)
Figure 6. DC Current Gain at VCE = 4 V
hFE, DC CURRENT GAIN
VCE = 4 V
25°C
150°C
−55°C
1
10
100
1000
0.01 0.1 1 10
IC, COLLECTOR CURRENT (A)
Figure 7. DC Current Gain at VCE = 2 V
hFE, DC CURRENT GAIN
VCE = 2 V
25°C
150°C
−55°C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A)
Figure 8. Collector−Emitter Saturation Voltage
VCE(sat), COLL−EMITT SATURATION
VOLTAGE (V)
IC/IB = 10
25°C
150°C
−55°C
VBE(sat), BASE−EMITT SATURATION VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
Figure 9. Base−Emitter Saturation Voltage
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0.001 0.01 0.1 1 10
VCE = 5 V
VBE(on), BASE−EMITTER ON VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
Figure 10. Base-Emitter “On” Voltage
−55°C
25°C
150°C
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0.001 0.01 0.1 1 10
IC/IB = 10
−55°C
25°C
150°C
0
0.4
0.8
1.2
1.6
2
0.01 0.1 1 10 100 1000
IB, BASE CURRENT (mA)
Figure 11. Collector Saturation Region
VCE, COLLECTOR−EMITTER VOLTAGE (V)
10 mA
100 mA 500 mA
1 A
IC = 3 A
TA =
25°C
MJD31 (NPN), MJD32 (PNP)
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5
TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)
1
10
100
1000
0.1 1 10 100
VR, REVERSE VOLTAGE (V)
Figure 12. Capacitance
C, CAPACITANCE (pF)
Cib
Cob
TA = 25°C
1
10
100
0.001 0.01 0.1 1 10
VCE = 5 V
TA = 25°C
IC, COLLECTOR CURRENT (A)
Figure 13. Current−Gain−Bandwidth Product
fT, CURRENT−GAIN − BANDWIDTH
PRODUCT (MHz)
0.01
0.1
1
10
1 10 100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Safe Operating Area
IC, COLLECTOR CURRENT (A)
MJD31 (NPN), MJD32 (PNP)
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TYPICAL CHARACTERISTICS − MJD32, MJD32C (PNP)
1
10
100
1000
0.01 0.1 1 10
IC, COLLECTOR CURRENT (A)
Figure 15. DC Current Gain at VCE = 4 V
h
FE
, DC CURRENT GAIN
VCE = 4 V
25°C
150°C
−55°C
1
10
100
1000
0.01 0.1 1 1
0
IC, COLLECTOR CURRENT (A)
Figure 16. DC Current Gain at VCE = 2 V
hFE, DC CURRENT GAIN
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0.001 0.01 0.1 1 10
VCE = 2 V
25°C
150°C
−55°C
25°C
150°C
−55°C
IC, COLLECTOR CURRENT (A)
Figure 17. Collector−Emitter Saturation
Voltage
V
CE(sat)
, COLL−EMITT SATURATION
VOLTAGE (V)
IC/IB = 10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.001 0.01 0.1 1 1
0
25°C
150°C
−55°C
IC, COLLECTOR CURRENT (A)
Figure 18. Base−Emitter Saturation Voltage
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0.001 0.01 0.1 1 10
VCE = 5 V
25°C
150°C
−55°C
IC, COLLECTOR CURRENT (A)
Figure 19. Base−Emitter “On” Voltage
V
BE(on)
, BASE−EMITTER ON
VOLTAGE (V)
0
0.4
0.8
1.2
1.6
2
0.01 0.1 1 10 100 100
0
IB, BASE CURRENT (mA)
Figure 20. Collector Saturation Region
VCE, COLLECTOR−EMITTER VOLTAGE (V)
10 mA
100 mA
500 mA
1 A IC = 3 A
TA =
25°C
MJD31 (NPN), MJD32 (PNP)
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TYPICAL CHARACTERISTICS
1
10
100
1000
0.1 1 10 100
VR, REVERSE VOLTAGE (V)
Figure 21. Capacitance
C, CAPACITANCE (pF)
Cib
Cob
TA = 25°C
1
10
100
0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A)
Figure 22. Current−Gain−Bandwidth Product
fT, CURRENT−GAIN − BANDWIDTH
PRODUCT (MHz)
VCE = 5 V
TA = 25°C
0.01
0.1
1
10
1 10 100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 23. Safe Operating Area
IC, COLLECTOR CURRENT (A)
1 ms
1 s
MJD31 (NPN), MJD32 (PNP)
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8
ORDERING INFORMATION
Device Package Type Package Shipping†
MJD31CG DPAK
(Pb−Free) 369C 75 Units / Rail
NJVMJD31CG* DPAK
(Pb−Free) 369C 75 Units / Rail
MJD31C1G IPAK
(Pb−Free) 369D 75 Units / Rail
MJD31CRLG DPAK
(Pb−Free) 369C 1,800 / Tape & Reel
NJVMJD31CRLG* DPAK
(Pb−Free) 369C 1,800 / Tape & Reel
MJD31CT4G DPAK
(Pb−Free) 369C 2,500 / Tape & Reel
NJVMJD31CT4G* DPAK
(Pb−Free) 369C 2,500 / Tape & Reel
MJD31T4G DPAK
(Pb−Free) 369C 2,500 / Tape & Reel
NJVMJD31T4G* DPAK
(Pb−Free) 369C 2,500 / Tape & Reel
MJD32CG DPAK
(Pb−Free) 369C 75 Units / Rail
NJVMJD32CG* DPAK
(Pb−Free) 369C 75 Units / Rail
MJD32CRLG DPAK
(Pb−Free) 369C 1,800 / Tape & Reel
MJD32CT4G DPAK
(Pb−Free) 369C 2,500 / Tape & Reel
NJVMJD32CT4G* DPAK
(Pb−Free) 369C 2,500 / Tape & Reel
MJD32RLG DPAK
(Pb−Free) 369C 1,800 / Tape & Reel
MJD32T4G DPAK
(Pb−Free) 369C 2,500 / Tape & Reel
NJVMJD32T4G* DPAK
(Pb−Free) 369C 2,500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
MJD31 (NPN), MJD32 (PNP)
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9
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
b
D
E
b3
L3
L4b2
M
0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D0.235 0.245 5.97 6.22
E0.250 0.265 6.35 6.73
A0.086 0.094 2.18 2.38
b0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.028 0.045 0.72 1.14
c0.018 0.024 0.46 0.61
e0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 −−− 0.040 −−− 1.01
L0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
12 3
4
5.80
0.228
2.58
0.102
1.60
0.063
6.20
0.244
3.00
0.118
6.17
0.243
ǒmm
inchesǓ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.114 REF 2.90 REF
L2 0.020 BSC 0.51 BSC
A1
H
DET AIL A
SEATING
PLANE
A
B
C
L1
L
H
L2 GAUGE
PLANE
DETAIL A
ROTATED 90 CW5
eBOTTOM VIEW
Z
BOTTOM VIEW
SIDE VIEW
TOP VIEW
ALTERNATE
CONSTRUCTIONS
NOTE 7
Z
MJD31 (NPN), MJD32 (PNP)
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10
PACKAGE DIMENSIONS
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
123
4
V
SA
K
−T−
SEATING
PLANE
R
B
F
GD3 PL
M
0.13 (0.005) T
C
E
JH
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.235 0.245 5.97 6.35
B0.250 0.265 6.35 6.73
C0.086 0.094 2.19 2.38
D0.027 0.035 0.69 0.88
E0.018 0.023 0.46 0.58
F0.037 0.045 0.94 1.14
G0.090 BSC 2.29 BSC
H0.034 0.040 0.87 1.01
J0.018 0.023 0.46 0.58
K0.350 0.380 8.89 9.65
R0.180 0.215 4.45 5.45
S0.025 0.040 0.63 1.01
V0.035 0.050 0.89 1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Z
Z0.155 −−− 3.93 −−−
IPAK
CASE 369D
ISSUE C
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MJD31/D
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