AO3419 20V P-Channel MOSFET General Description Product Summary The AO3419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications. VDS -20V ID (at VGS=-10V) -3.5A RDS(ON) (at VGS= -10V) < 85m RDS(ON) (at VGS= -4.5V) < 102m RDS(ON) (at VGS= -2.5V) < 140m Typical ESD protection HBM Class 2 SOT23 Top View Bottom View D D D G G S S S G Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25C Continuous Drain Current Pulsed Drain Current C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 5: Nov 2011 Steady-State Steady-State A 1.4 W 0.9 TJ, TSTG Symbol t 10s V -17 PD TA=70C 12 -2.8 IDM TA=25C Units V -3.5 ID TA=70C Maximum -20 RJA RJL www.aosmd.com -55 to 150 Typ 65 85 43 C Max 90 125 60 Units C/W C/W C/W Page 1 of 5 AO3419 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250A, VGS=0V -20 Typ Max Units V VDS=-20V, VGS=0V -1 TJ=55C -5 A 10 A -0.85 -1.2 V 71 85 99 119 VGS=-4.5V, ID=-3A 85 102 VGS=-2.5V, ID=-1A 112 140 VGS=-1.8V, ID=-0.5A 168 m Forward Transconductance VDS=-5V, ID=-3.5A 8.6 S VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current IGSS Gate-Body leakage current VDS=0V, VGS= 12V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250 -0.5 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -17 VGS=-10V, ID=-3.5A TJ=125C RDS(ON) gFS Static Drain-Source On-Resistance DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge VGS=-4.5V, VDS=-10V, ID=-3.5A A -0.76 m m m -1 V -1.5 A 250 325 400 pF 40 63 85 pF 22 37 52 pF 11.2 17 3.1 4.4 nC 0.6 nC Qgd Gate Drain Charge 1.1 nC tD(on) Turn-On DelayTime 11 ns tr Turn-On Rise Time 5.5 ns 22 ns 8 ns ns nC tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=-10V, VDS=-10V, RL=2.8, RGEN=3 trr Body Diode Reverse Recovery Time IF=-3.5A, dI/dt=100A/s 11 Qrr Body Diode Reverse Recovery Charge IF=-3.5A, dI/dt=100A/s 4.3 A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedance from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 5: Nov 2011 www.aosmd.com Page 2 of 5 AO3419 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 12 -10V 25 VDS=-5V -4.5V 9 -3.5V -ID(A) -ID (A) 20 15 6 -2.5V 10 3 VGS=-2.0V 125C 5 25C 0 0 0 1 2 3 4 5 0 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 170 2 3 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 4 Normalized On-Resistance 1.60 140 RDS(ON) (m ) 1 VGS=-2.5V 110 VGS=-4.5V 80 VGS=-10V 50 ID=-3.5A, VGS=-10V 1.40 ID=-3A, VGS=-4.5V 1.20 ID=-1A, VGS=-2.5V 1.00 0.80 20 0 0 2 4 6 8 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 180 1.0E+01 ID=-3.5A 1.0E+00 1.0E-01 120 125C 90 -IS (A) RDS(ON) (m ) 150 125C 25C 1.0E-02 1.0E-03 60 25C 1.0E-04 30 1.0E-05 0.0 4.0 6.0 8.0 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 5: Nov 2011 2.0 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO3419 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 5 VDS=-10V ID=-3.5A 450 Capacitance (pF) -VGS (Volts) 4 3 2 Ciss 300 150 Coss 1 Crss 0 0 0 1 2 3 4 Qg (nC) Figure 7: Gate-Charge Characteristics 0 5 100.0 5 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics 1000 TJ(Max)=150C TA=25C 10s RDS(ON) limited 100s Power (W) 10.0 -ID (Amps) 20 1ms 1.0 10ms DC 0.1 100ms 10s TJ(Max)=150C TA=25C 0.0 0.01 100 10 1 0.1 1 10 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.00001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) 100 0.001 Z JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJA=125C/W 1 0.1 PD Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 5: Nov 2011 www.aosmd.com Page 4 of 5 AO3419 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge R esistive Sw itching Test C ircuit & W aveform s RL V ds t o ff to n Vgs - DUT Vgs V DC td(o n) t d(o ff) tr tf 90% V dd + Rg V gs 10% V ds D iode R e covery Te st C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs Vds Isd V gs Ig Rev 5: Nov 2011 L -Isd + V dd t rr dI/dt -I R M V dd VDC - -I F -Vds www.aosmd.com Page 5 of 5