AO3419
20V P-Channel MOSFET
General Description Product Summary
V
DS
-20V
I
D
(at V
GS
=-10V) -3.5A
R
DS(ON)
(at V
GS
= -10V) < 85mΩ
R
DS(ON)
(at V
GS
= -4.5V) < 102mΩ
R
DS(ON)
(at V
GS
= -2.5V) < 140mΩ
Typical ESD protection
HBM Class 2
Symbol
V
DS
The AO3419 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as
a load switch applications.
V
Maximum UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
-20
S
G
D
SOT23
Top View Bottom View
D
G
S
G
S
D
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJL
°C/W
°C/W
Maximum Junction-to-Ambient
A D
43 125
60
-17
T
A
=25°C
T
A
=70°C
Pulsed Drain Current
C
Continuous Drain
Current
Maximum Junction-to-Lead
Junction and Storage Temperature Range
Parameter Typ Max
V
Units
V±12Gate-Source Voltage
-20
A
I
D
-3.5
-2.8
°C/W
R
θJA
65
85 90
Maximum Junction-to-Ambient
A
-55 to 150 °C
Thermal Characteristics
Power Dissipation
B
P
D
T
A
=25°C W
1.4
0.9
T
A
=70°C
Rev 5: Nov 2011
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AO3419
Symbol Min Typ Max Units
BV
DSS
-20 V
V
DS
=-20V, V
GS
=0V -1
T
J
=55°C -5
I
GSS
±10 µA
V
GS(th)
Gate Threshold Voltage -0.5 -0.85 -1.2 V
I
D(ON)
-17 A
71 85
T
J
=125°C 99 119
85 102 mΩ
112 140 mΩ
168 mΩ
g
FS
8.6 S
V
SD
-0.76 -1 V
I
S
-1.5 A
C
iss
250 325 400 pF
C
oss
40 63 85 pF
C
rss
22 37 52 pF
R
g
11.2 17 Ω
Q
g
3.1 4.4 nC
Q
gs
0.6 nC
Q
gd
1.1 nC
t
11
ns
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Diode Forward Voltage
Forward Transconductance
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-10V, I
D
=-3.5A
V
GS
=-4.5V, I
D
=-3A
Drain-Source Breakdown Voltage
On state drain current
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-3.5A
V
GS
=-1.8V, I
D
=-0.5A
V
GS
=-2.5V, I
D
=-1A
I
D
=-250µA, V
GS
=0V
I
DSS
µA
V
DS
=V
GS
, I
D
=-250µΑ
V
DS
=0V, V
GS
= ±12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
mΩ
Static Drain-Source On-Resistance
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
R
DS(ON)
Total Gate Charge V
GS
=-4.5V, V
DS
=-10V, I
D
=-3.5A
Gate Source Charge
Reverse Transfer Capacitance V
GS
=0V, V
DS
=-10V, f=1MHz
SWITCHING PARAMETERS
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Gate Drain Charge
Turn-On DelayTime
t
D(on)
11
ns
t
r
5.5 ns
t
D(off)
22 ns
t
f
8ns
t
rr
11 ns
Q
rr
4.3 nC
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
V
GS
=-10V, V
DS
=-10V, R
L
=2.8Ω,
R
GEN
=3Ω
Body Diode Reverse Recovery Charge I
F
=-3.5A, dI/dt=100A/µs
Turn-On Rise Time
Turn-Off DelayTime
I
F
=-3.5A, dI/dt=100A/µs
Turn-On DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using ≤10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to am bient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev 5: Nov 2011 www.aosmd.com Page 2 of 5
AO3419
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
01234
-ID(A)
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
20
50
80
110
140
170
02468
RDS(ON) (mΩ
Ω
Ω
Ω)
-ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.80
1.00
1.20
1.40
1.60
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
25°C
125°C
V
DS
=-5V
VGS=-2.5V
VGS=-10V
0
5
10
15
20
25
30
012345
-ID(A)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=-2.0V
-
4.5V
-
10V
-2.5V
-3.5V
VGS=-4.5V
ID=-3.5A, VGS=-10V
ID=-3A, VGS=-4.5V
ID=-1A, VGS=-2.5V
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-IS(A)
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25
°
C
125
°
C
(Note E)
30
60
90
120
150
180
0.0 2.0 4.0 6.0 8.0
RDS(ON) (mΩ
Ω
Ω
Ω)
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=-3.5A
25°C
125°C
Rev 5: Nov 2011 www.aosmd.com Page 3 of 5
AO3419
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
012345
-VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
150
300
450
600
0 5 10 15 20
Capacitance (pF)
-VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
VDS=-10V
ID=-3.5A
1
10
100
1000
0.00001 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to
-
Ambient (Note F)
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
-ID(Amps)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
10s
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
T
A
=25°C
100
µ
s
10ms
100ms
TJ(Max)=150°C
TA=25°C
Operating Area (Note F)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=125°C/W
T
on
T
P
D
Rev 5: Nov 2011 www.aosmd.com Page 4 of 5
AO3419
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
DUT
L
Vgs
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
dI/dt
rr
Q = - Idt
t
rr
-Isd
F
-I
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
t t
t
tt
t
90%
10%
r
on
d(off)
f
off
d(on)
Ig
Vgs
-
+
VDC
Isd
dI/dt
RM
Vdd
Vdd
-Vds
-I
Rev 5: Nov 2011
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