TOSHIBA $G2000GXH26 TENTATIVE TOSHIBA GATE TURN-OFF THYRISTOR LOW SNUBBER TYPE SG2000GXH26 INVERTER APPLICATION Unit in mm 2- 63.5402 DEPTH 2.1404 e Repetitive Peak Off-State Voltage: Vprmw = 4500 V (Note 1) 20 (1P,) 3045 J @ RMS On-State Current : Ip (RMS) = 1000 A (Tr = 76C) _)- 12 rl e Peak Turn-Off Current : ITGQh = 2000A @ Critical Rate of Rise of On-State Current : di/dt = 500 A/ ys @ Critical Rate of Rise of Off-State Voltage :dv/dt= 1000 V/ us MAXIMUM RATINGS CHARACTERISTIC SYMBOL | RATING | UNIT Repetitive Peak Off-state Voltage (Note 1) VDRM 4500 Vv Repetitive Peak Reverse Voltage VRRM 16 Vv @-(1) CATHODE Peak Turn-Off Current (Note 2) | ItGqm 2000 A @-(2) CATHODE (BLACK) ANODE R.M.S On-State Current (Note 3) | Ipcrms) |__1000 A 5 ON Peak One Cycle Surge On-State JEDEC _ Current (non repetitive, 10 ms ITSM 16000 A width half sine waveform) EIAJ = iti i - TOSHIBA 13-93E1A Critical Rate Of Rise Of On-State di/dt 500 Al us Current (Note 4) Weight : 800g Peak Forward Gate Current IFGM 100 A Average Forward Gate Power Dissipation PRG (AV) 50 w Average Reverse Gate Power Dissipation PRG (AV) 150 w R.M.S Gate Current (Note 5) | Ig (RMS) 42 A Peak Reverse Gate Voltage (at Static) | YRGOM 16 v Operating Junction Temperature T; _40~125 C Range Storage Temperature Range Tste 40~150 C Mounting Force 19.6 + 2.0 kN (Note 1): VaK = -2V (Note 2): Vp = 4000 V, Cg = 2 nF, Rg = 5 0, digg/dt = 35 A/ us, Vpgp = 800V, Lg = 0.2 wH (Note 3): 50Hz Half Sine Waveform at Tp = 76C (Note 4): Vp =1/2 VprM, Iem = 254 (Note 5) : Ambient Temperature of coaxial gate-cathode lead = 90C 961001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to abserve standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 2000-02-17 1/3 TOSHIBA $G2000GXH26 ELECTRICAL CHARACTERISTICS CHARACTERISTIC SYMBOL TEST CONDITION MIN | TYP. | MAX | UNIT Repetitive Peak Off-state VpRM = RATED, Vox = -2V, Current 1DRM Tj = 125C 7 7 100) mA Repetitive Peak Reverse _ _ Current IRRM VRRM = RATED, Tj = 125C 10] mA Repetitive Peak Reverse _ - _ 49RK0 Gate Current IRGM | VRGM = 16V, Tj = 125C 10| mA Peak On-State Voltage VIM IpM = 2000 A, Tj = 125C 3.60] V T; = 40C 1.70] V : J Gate Trigger Voltage VGT Vp = 24 V, Tj = 95C _ _ 1.20 V j Ry, = 0.10 T= 40C | | 9.0| A Gate Trigger Current IgtT 1; = 25C = = 301A : Vp =1/2 VpRM Turn-On Delay T t , __ | _ 3 arnmn Selay ime d di/dt = 500 A/ xs, es . IgM = 25 A, Ip = 2000 A, Turn-On Time tet T; = 25C 10} us sys . VDRM = 2/3 RATED, 1 f f Off- Critical Rate Of Rise Of O dv/dt |T; = 125C, Vox = 2V, 1000] | |v/ps State Voltage : ; Exponential Rise Storage Time tg ITGQ = 2000 A, Vpm = 4000 V, 23] us Gate Turn-Off Time teq Rg = 5 , Vp = 1/2 VDRM, | |] 26] ps ; diGQ/dt = 35A/ us, Tail Time ttail Cs = 2 uF, Vpsp < 800 Vv, _ 100 _ LS Gate Turn-Off Current IgQ Tj = 125C, Lg = 0.2 H 520; A Thermal Resistance (Junction to Fin) Ring |DC 7 | 0-018 C/W 2000-02-17 2/3 TOSHIBA $G2000GXH26 INSTANTANEOUS ON-STATE CURRENT iy {A) Eorr () TURN-OFF ENERGY PER A PULSE PEAK ONE-CYCLE SURGE ON-STATE CURRENT Ipgu (kA) ip vt (max) 8000 6000 3000 1000 300 100 60 1.0 2.0 3.0 4.0 INSTANTANEOUS ON-STATE VOLTAGE U7 (V) EOFF ITGQ (typ.) 8 Vp = 4000 V Vp = 2250 V a digg/dt = 35 A/ ps | 6| Cg =2 eF, RS=50, T; = 125C Ua ra , Zo 0 1000 2000 TURN-OFF CURRENT ITgq (A) ITSM tp 50 30 10 5 3| HALF SINE WAVE FORM C\ fi Ll Ig =3.0A 1 0.1 03 05 1 3.5 10 30 50 100 PULSE WIDTH tp (ms) EON IT (typ.) 5 3 Vp = 2250V z di/dt = 500 A/ ys a Cg = 2 uF, Rg = 50 a Tj = 125C mt 5 2 Oy = _ & | fay __ 6 a g 1 iy B, <3] z 9 z > 0 m 0 1000 2000 ON-STATE CURRENT Ipy (A) ITGQM - Cs (typ.) zs 4 IT || z Lg = 0.20 #H S 5 =| a ' L| 0.30 EB set a LT ky a 2 Lf) | 3 iY fe Kf) Z Y Vp <= 4000 V 1 A Vp = 2250 V 2) 7 digg/dt + 35 A/ ps Mt Vag 216V S Vpsp < 750 + a x Cg WF) IV] 0 0 1 2 3 4 5 6 7 SNUBBER CAPACITANCE Cg (uF) rth (j-f) t (max) 0.06 @ CATHODE SIDE (ns) ANODE SIDE (ms) 0.05 @ DOUBLE SIDE (ms) CATHODE SIDE (s) S oO = ANODE SIDE (s) S o 0.02 DOUBLE SIDE (s) 0.01 TRANSIENT THERMAL IMPEDANCE Tth@f CC/W) 1 38 5 10 30 50 =100 300 500 1000 TIME t (ms AND s) 2000-02-17 3/3