RRH090P03
Pch -30V -9A Power MOSFET Datasheet
llOutline
VDSS -30V SOP8
RDS(on)(Max.) 15.4mΩ
ID±9A
PD2W
llInner circuit
llFeatures
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
4) Pb-free lead plating ; RoHS compliant
llPackaging specifications
Type
Packing Embossed
Tape
Reel size (mm) 330
llApplication Tape width (mm) 12
DC/DC Converter Basic ordering unit (pcs) 2500
Taping code TB1
Marking RRH090P03
llAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol Value Unit
Drain - Source voltage VDSS -30 V
Continuous drain current ID*1 ±9 A
Pulsed drain current ID,pulse*2 ±36 A
Gate - Source voltage VGSS ±20 V
Avalanche energy, single pulse EAS*3 0.6 mJ
Power dissipation PD*4 2 W
PD*5 0.65 W
Junction temperature Tj150 ℃
Range of storage temperature Tstg -55 to +150 ℃
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© 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150730 - Rev.001
RRH090P03 Datasheet
llThermal resistance
Parameter Symbol Values Unit
Min. Typ. Max.
Thermal resistance, junction - ambient
RthJA
*4 - - 62.5 ℃/W
RthJA
*5 - - 192 ℃/W
llElectrical characteristics (Ta = 25°C)
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Drain - Source breakdown
voltage V(BR)DSS VGS = 0V, ID = -1mA -30 - - V
Breakdown voltage
temperature coefficient
ΔV(BR)DSS
ID = -1mA - -25 - mV/℃
ΔTj referenced to 25℃
Zero gate voltage
drain current IDSS VDS = -30V, VGS = 0V - - -1 μA
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V - - ±10 μA
Gate threshold voltage VGS(th) VDS = -10V, ID = -1mA -1.0 - -2.5 V
Gate threshold voltage
temperature coefficient
ΔVGS(th) ID = -1mA - 3.9 - mV/℃
ΔTj referenced to 25℃
Static drain - source
on - state resistance RDS(on)*6
VGS = -10V, ID = -9A - 11 15.4
mΩ
VGS = -4.5V, ID = -4.5A - 15 21
VGS = -4V, ID = -4.5A - 17 24
VGS = , ID = - - -
Gate input resistance RG f = 1MHz, open drain - 3.0 - Ω
Forward Transfer
Admittance |Yfs|*6 VDS = -10V, ID = -9A 10 20 - S
*1 Limited only by maximum temperature allowed.
*2 Pw ≤ 10μs, Duty cycle ≤ 1%
*3 L ⋍ 10μH, VDD = -15V, RG = 25Ω, starting Tj = 25°C
*4 Mounted on a ceramic board (30×30×0.8mm)
*5 Mounted on a FR4 (20×20×0.8mm)
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© 2015 ROHM Co., Ltd. All rights reserved. 2/11 20150730 - Rev.001
RRH090P03 Datasheet
llElectrical characteristics (Ta = 25°C)
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Input capacitance Ciss VGS = 0V - 3000 -
pFOutput capacitance Coss VDS = -10V - 360 -
Reverse transfer capacitance Crss f = 1MHz - 360 -
Turn - on delay time td(on)*6 VDD ⋍ -15V,VGS = -10V - 20 -
ns
Rise time tr*6 ID = -4.5A - 30 -
Turn - off delay time td(off)*6 RL ⋍ 3.3Ω - 135 -
Fall time tf*6 RG = 10Ω - 80 -
llGate charge characteristics (Ta = 25°C)
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Total gate charge Qg*6
VDD ⋍ -15V
ID = -9A
VGS = -10V - 56 -
nC
VGS = -5V
- 30 -
Gate - Source charge Qgs*6 - 7 -
Gate - Drain charge Qgd*6 - 11 -
llBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Inverse diode continuous,
forward current IS*1 Ta = 25℃- - -1.6 A
Forward voltage VSD*6 VGS = 0V, IS = -9A - - -1.2 V
Reverse recovery time trr*6 IS = -9A, VGS=0V
di/dt = 100A/μs
- 35 70 ns
Reverse recovery charge Qrr*6 - 30 60 μC
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© 2015 ROHM Co., Ltd. All rights reserved. 3/11 20150730 - Rev.001
RRH090P03 Datasheet
llElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power
dissipation
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© 2015 ROHM Co., Ltd. All rights reserved. 4/11 20150730 - Rev.001
RRH090P03 Datasheet
llElectrical characteristic curves
Fig.5 Avalanche Current vs. Inductive Load Fig.6 Avalanche Energy Derating Curve
vs. Junction Temperature
Fig.7 Typical Output Characteristics(I) Fig.8 Typical Output Characteristics(II)
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© 2015 ROHM Co., Ltd. All rights reserved. 5/11 20150730 - Rev.001
RRH090P03 Datasheet
llElectrical characteristic curves
Fig.9 Breakdown Voltage vs. Junction
Temperature
Fig.10 Typical Transfer Characteristics
Fig.11 Gate Threshold Voltage vs.
Junction Temperature
Fig.12 Transconductance vs. Drain Current
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© 2015 ROHM Co., Ltd. All rights reserved. 6/11 20150730 - Rev.001
RRH090P03 Datasheet
llElectrical characteristic curves
Fig.13 Drain Current Derating Curve Fig.14 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Fig.15 Static Drain - Source On - State
Resistance vs. Junction Temperature
Fig.16 Static Drain - Source On - State
Resistance vs. Drain Current(I)
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© 2015 ROHM Co., Ltd. All rights reserved. 7/11 20150730 - Rev.001
RRH090P03 Datasheet
llElectrical characteristic curves
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current(II)
Fig.18 Static Drain - Source On - State
Resistance vs. Drain Current(III)
Fig.19 Static Drain - Source On - State
Resistance vs. Drain Current(IV)
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© 2015 ROHM Co., Ltd. All rights reserved. 8/11 20150730 - Rev.001
RRH090P03 Datasheet
llElectrical characteristic curves
Fig.20 Typical Capacitance vs. Drain -
Source Voltage
Fig.21 Switching Characteristics
Fig.22 Dynamic Input Characteristics Fig.23 Source Current vs. Source Drain
Voltage
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© 2015 ROHM Co., Ltd. All rights reserved. 9/11 20150730 - Rev.001
RRH090P03 Datasheet
llMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform
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© 2015 ROHM Co., Ltd. All rights reserved. 10/11 20150730 - Rev.001
RRH090P03 Datasheet
llDimensions
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© 2015 ROHM Co., Ltd. All rights reserved. 11/11 20150730 - Rev.001
