A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subjec t to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIO NS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 100 mA 36 V
BVCEO IC = 100 mA 18
BVEBO IE = 25 mA 4.0 V
hFE VCE = 5.0 V IC = 1.0 A 10 200 ---
Cc VCB = 15 V f = 1.0 MHz 130 160 pF
fT VCE = 10 V IC = 6.0 A 550 MHz
GP
η
ηη
ηC VCC = 12.5 V POUT = 50 W f = 175 MHz 5.0
75
dB
%
NPN SILICON RF POWER TRANSISTOR
BLY90
DESCRIPTION:
The ASI BLY90 is Designed f or
Class A,B and C, 12.5 V High Band
Applications up to 175 MHz.
FEATURES:
• Common Emitter
• PG = 5.0 dB at 50 W/175 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 8.0 A
VCBO 36 V
VCEO 18 V
VEBO 4.0 V
PDISS 130 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 1.35 °C/W
PACKAGE STYLE .380 4L STUD
MINIMUM
inches / mm
.004 / 0.10
.370 / 9.40
.320 / 8.13
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.330 / 8.38
.130 / 3.30
.007 / 0.18
inches / mm
H.090 / 2.29 .100 / 2.54
DIM
.220 / 5.59 .230 / 5.84
.490 / 12.45.450 / 11.43
I
J
.155 / 3.94 .175 / 4.45
.750 / 19.05
.980 / 24.89
.100 / 2.54
E F
D
ØC
B
.112x45°
G
H
J
I
A
#8-32 UN C -2A
C
B
E E
