IN1IN2
D1D2
S1S2
V– V+
GND VL
S4S3
D4D3
IN4IN3
Dual-In-Line
and SOIC
DG611
S1S2
V– V+
NC NC
GND VL
S4S3
DG611
DG611/612/613
Siliconix
S-52880—Rev. E, 28-Apr-97 1
High-Speed, Low-Glitch D/CMOS Analog Switches
Features Benefits Applications
Fast Switching— tON: 12 ns
Low Charge Injection: 2 pC
Wide Bandwidth: 500 MHz
5-V CMOS Logic Compatible
Low rDS(on): 18
Low Quiescent Power : 1.2 nW
Single Supply Operation
Improved Data Throughput
Minimal Switching Transients
Improved System Performance
Easily Interfaced
Low Insertion Loss
Minimal Power Consumption
Fast Sample-and-Holds
Synchronous Demodulators
Pixel-Rate Video Switching
Disk/Tape Drives
DAC Deglitching
Switched Capacitor Filters
GaAs FET Drivers
Satellite Receivers
Description
The DG611/612/613 feature high-speed low-capacitance
lateral DMOS switches. Charge injection has been
minimized to optimize performance in fast sample-and-hold
applications.
Each switch conducts equally well in both directions
when on and blocks up to 16 Vp-p when off. Capacitances
have been minimized to ensure fast switching and
low-glitch energy. To achieve such fast and clean
switching performance, the DG611/612/613 are built on
the Siliconix proprietary D/CMOS process. This process
combines n-channel DMOS switching FETs with
low-power CMOS control logic and drivers. An epitaxial
layer prevents latchup.
The DG611 and DG612 differ only in that they respond
to opposite logic levels. The versatile DG613 has two
normally open and two normally closed switches. It can
be given various configurations, including four SPST,
two SPDT, one DPDT.
For additional information see Applications Note
AN207.
Functional Block Diagram and Pin Configuration
Four SPST Switches per Package
Truth Table
Logic DG611 DG612
0 ON OFF
1 OFF ON
Logic “0” 1 V
Logic “1” 4 V
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70057.
Applications information may be obtained via FaxBack, request document #70605.
IN1IN2
D1D2
S1S2
V– V+
GND VL
S4S3
D4D3
IN4IN3
Dual-In-Line
and SOIC
DG613
S3
NC
VL
S2
S4
V–
NC
V+
GND
S1
DG613
DG611/612/613
2 Siliconix
S-52880—Rev. E, 28-Apr-97
Functional Block Diagram and Pin Configuration (Cont’d)
Four SPST Switches per Package
Truth Table
Logic SW1, SW4SW2, SW3
0 OFF ON
1 ON OFF
Logic “0” 1 V
Logic “1” 4 V
Ordering Information
Temp Range Package Part Number
DG611/612
16
-
Pin Plastic DIP
DG611DJ
–
40 to 85
_
C
16
-
Pin
Plastic
DIP
DG612DJ
–
40
to
85 C
16 Pin Narrow SOIC
DG611DY
16
-
Pin
Narrow
SOIC
DG612DY
16 Pin CerDIP
DG611AK/883
55 to 125
_
C
16
-
Pin
CerDIP
DG612AK/883
–
55
to
125_C
LCC 20
DG611AZ/883
LCC
-
20
DG612AZ/883
DG613
Temp Range Package Part Number
–
40 to 85
_
C
16-Pin Plastic DIP DG613DJ
–
40
to
85 C
16-Pin Narrow SOIC DG613DY
55 to 125
_
C
16-Pin CerDIP DG613AK/883
–
55
to
125_C
LCC-20 DG613AZ/883
Absolute Maximum Ratings
V+ to V– –0.3 V to 21 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V+ to GND –0.3 V to 21 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V– to GND –19 V to 0.3 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VL to GND –1 V to (V+) + 1 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
or 20 mA, whichever occurs first
VINa(V–) –1 V to (V+) + 1 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
or 20 mA, whichever occurs first
VS, VDa(V–) –0.3 V to (V–) + 16 V. . . . . . . . . . . . . . . . . . . . . . . . . .
or 20 mA, whichever occurs first
Continuous Current (Any Terminal) 30 mA. . . . . . . . . . . . . . . . . . .
Current, S or D (Pulsed at 1 ms, 10% Duty Cycle) 100 mA. . . . . . . .
Storage Temperature: CerDIP –65 to 150_C. . . . . . . . . . . . . . . .
Plastic –65 to 125_C. . . . . . . . . . . . . . . .
Power Dissipation (Package)b
16-Pin Plastic DIPc470 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16-Pin Narrow SOICd600 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16-Pin CerDIPe900 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20-Pin LCCe900 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped
by internal diodes. Limit forward diode current to maximum
current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/_C above 75_C
d. Derate 7.6 mW/_C above 75_C
e. Derate 12 mW/_C above 75_C
DG611/612/613
Siliconix
S-52880—Rev. E, 28-Apr-97 3
Recommended Operating Range
V+ 5 V to 21 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V– –10 V to 0 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VL4 V to V+. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VIN 0 V to VL
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VANALOG V– to (V+) – 5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Specificationsa
Test Conditions
Unless Otherwise Specified
b
A Suffix
–55 to 125_CD Suffix
–40 to 85_C
Parameter Symbol V+ = 15 V, V– = –3 V
VL = 5 V, VIN = 4 V, 1 VfTemp
b
TypcMindMaxdMindMaxdUnit
Analog Switch
Analog Signal RangeeVANALOG V– = –5 V, V+ = 12 V Full –5 7 –5 7 V
Switch OnĆResistance rDS(on)
IS=-1mA V
D=0V
Room
Full
18 45
60
45
60
W
Resistance
Match Bet Ch. DrDS(on)
I
S
=
-
1mA
,
V
D
=0V
Room 2
W
Source Off Leakage IS(off) VS=0V,V
D=10V Room
Hot
0.001 -0.25
-20
0.25
20
-0.25
-20
0.25
20
Drain Off
Leakage Current ID(off) VS=10V,V
D=0V Room
Hot
0.001 -0.25
-20
0.25
20
-0.25
-20
0.25
20 nA
Switch On
Leakage Current ID(on) VS=V
D=0V Room
Hot
0.001 -0.4
-40
0.4
40
-0.4
-40
0.4
40
Digital Control
Input Voltage High VIH Full 4 4
V
Input Voltage Low VIL Full 1 1
V
Input Current IIN Room
Hot
0.005 -1
-20
1
20
-1
-20
1
20 mA
Input Capacitance CIN Room 5 pF
Dynamic Characteristics
Off State
Input Capacitance CS(off) VS=0V Room 3
Off State
Output Capacitance CD(off) VD=0V Room 2 pF
On State
Input Capacitance CS(on) VS=V
D=0V Room 10
Bandwidth BW RL=50WRoom 500 MHz
TurnĆOn TimeetON RL= 300 W,C
L=3pF
VS=2V
Room 12 25 25
TurnĆOff TimeetOFF
VS=2V
See Test Circuit, Figure 2 Room 8 20 20
TurnĆOn Time tON RL= 300 W,C
L=75pF
VS=2V
Room
Full
19 35
50
35
50
ns
TurnĆOff Time tOFF
VS=2V
See Test Circuit, Figure 2 Room
Full
16 25
35
25
35
Charge InjectioneQ CL=1nF,V
S=0V Room 4
pC
Ch. Injection Changee, g DQCL=1nF,VSā3V Room 3 4 4 p
C
Off IsolationeOIRR RIN =50W,R
L=50W
f = 5 MHz Room 74
dB
CrosstalkeXTAL K RIN =10W,R
L=50W
f = 5 MHz Room 87
dB
DG611/612/613
4 Siliconix
S-52880—Rev. E, 28-Apr-97
Specificationsa
Test Conditions
Unless Otherwise Specified
b
A Suffix
–55 to 125_CD Suffix
–40 to 85_C
Parameter Symbol V+ = 15 V, V– = –3 V
VL = 5 V, VIN = 4 V, 1 VfTemp
b
TypcMindMaxdMindMaxdUnit
Power Supplies
Positive
Supply Curent I+ Room
Full
0.005 1
5
1
5
Negative
Supply Current I-
VIN =0Vor5V
Room
Full
-0.005 -1
-5
-1
-5
mA
Logic Supply Current IL
V
IN
=0Vor5V
Room
Full
0.005 1
5
1
5
mA
Ground Current IGND Room
Full
-0.005 -1
-5
-1
-5
Specificationsa for Unipolar Supplies
Test Conditions
Unless Otherwise Specified
b
A Suffix
–55 to 125_CD Suffix
–40 to 85_C
Parameter Symbol V+ = 15 V, V– = –3 V
VL = 5 V, VIN = 4 V, 1 VfTemp
b
TypcMindMaxdMindMaxdUnit
Analog Switch
Analog Signal RangeeVANALOG Full 0 7 0 7 V
Switch OnĆResistance rDS(on) IS= -1 mA, VD=1V Room 25 60 60 W
Dynamic Characteristics
TurnĆOn TimeetON RL= 300 W,C
L=3pF,V
S=2V Room 15 30 30
ns
TurnĆOff TimeetOFF
L L pS
See Test Circuit, Figure 2 Room 10 25 25
ns
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g. DQ = Q at VS = 3 V – Q at VS = –3 V.
DG611/612/613
Siliconix
S-52880—Rev. E, 28-Apr-97 5
Typical Characteristics
rDS(on) – Drain-Source On-Resistance (
–4 –2 0 2 4 6 8 10 12–5
400
350
300
250
200
150
100
50
0
rDS(on) vs.
V
D an
d
P
ower
S
upp
l
y
V
o
l
tages
VD – Drain Voltage (V)
V+ = 5 V
V– = –5 V
V+ = 12 V
V– = –5 V
V+ = 15 V
V– = –3 V
IS = –1 mA
rDS(on) – Drain-Source On-Resistance (
–4–2024681012
400
350
300
250
200
150
100
50
0
rDS(on) vs.
V
D an
d
T
emperature
VD – Drain Voltage (V)
25_C
V+ = 15 V
V– = –3 V
IS = –1 mA
12_C
–55_C
–4 –2 0 2 4 6 8 10
3
2
1
0
–1
–2
–3
– Leakage Current (pA), I D
VD or VS – Drain or Source Voltage (V)
IS(off), ID(off)
ID(on)
V+ = 15 V
V– = –3 V
Leakage Current vs. Analog Voltage
IS
–55 0 125
Leakage Currents vs. Temperature
Temperature (_C)
–25 25 50 75 100
10 nA
0.1 pA
100 pA
10 pA
1 pA
IS(off), ID(off)
ID(on)
1 nA
– Leakage (A)I, I
S(off) D(off)
0 5 10 15
6
5
4
3
2
1
0
Input Switching Threshold vs. VL
VL – Logic Supply Voltage (V)
V+ = 15 V
V– = –3 V
VIN – Logic Input Voltage (V)
16
14
12
10
8
6
4
2
0
24
22
20
18
–55 –35 –15 5 25 45 65 85 105 125
V+ = 15 V
V– = –3 V
RL = 300
CL = 10 pF
Switching Times vs. Temperature
tON
tOFF
Time (ns)
Temperature (_C)
DG611/612/613
6 Siliconix
S-52880—Rev. E, 28-Apr-97
Typical Characteristics (Cont’d)
Charge (pC)
VANALOG – Analog Voltage (V)
20
10
0
–10
–20–3–2–1012345678910
Charge Injection vs. Analog Voltage
Qd
Qs
V+ = 15 V
V– = –3 V
1 10 100
–20
–40
–60
–80
–100
–120
f – Frequency (MHz)
Crosstalk and Off Isolation vs. Frequency
V+ = 15 V
V– = –3 V
(dB)
Crosstalk
Off Isolation
Insertion Loss (dB)
1 10 100 1000
–24
–20
–16
–12
–8
–4
0
f – Frequency (MHz)
RL = 50
–3 dB Bandwidth/Insertion Loss vs. Frequency
–3 dB Point
Supply Current (mA)
6
5
4
3
2
1
0
–1
–2
–3
–4
–5 1 k 100 k 100 k 1 M 10 M
V+ = 15 V
V– = –3 V
VL = 5 V
CX = 0, 5 V
Supply Currents vs. Switching Frequency
f – Frequency (Hz)
I+
IL
I–
Schematic Diagram (Typical Channel)
VL
V+
V–
S
D
DMOS Switch
Level
Translator
Input
Logic
INX
Figure 1.
Driver
DG611/612/613
Siliconix
S-52880—Rev. E, 28-Apr-97 7
Test Circuits
S1
D2
S2
VS
1 V, 4 V VO
IN2
Rg = 50
1 V, 4 V
XTALK Isolation = 20
log
VS
VL
VO
V+
IN150
C = RF bypass
RL
D1
–3 V
GND V–
NC
C
+15 V
C+5 V C
CL (includes fixture and stray capacitance)
VL
RL
RL + rDS(on)
VO = VS
VO
2 V
V+
V–
IN
–3 V
S
GND RL
300
D
CL
+15 V+5 V
Figure 2. Switching Time
50%
20%
90%
tON tOFF
Logic Input
0 V
5 V
VS= ”2 V
0 V
Switch Output
tr < 10 ns
tf < 10 ns
Figure 3. Charge Injection
CL
1 nF
D
RgVO
V+
S
V–
5 V IN
VL
Vg
–3 V
GND
+15 V+5 V
Figure 4. Crosstalk
Applications
High-Speed Sample-and-Hold
In a fast sample-and-hold application, the analog switch
characteristics are critical. A fast switch reduces aperture
uncertainty. A low charge injection eliminates offset (step)
errors. A low leakage reduces droop errors. The Si581, a fast
input buffer, helps to shorten acquisition and settling times.
A low leakage, low dielectric absorption hold capacitor
must be used. Polycarbonate, polystyrene and
polypropylene are good choices. The JFET output
buffer reduces droop due to its low input bias current.
(See Figure 5.)
Pixel-Rate Switch
Windows, picture-in-picture, title overlays are
economically generated using a high-speed analog
switch such as the DG613. For this application the two
video sources must be sync locked. The glitch-less
analog switch eliminates halos. (See Figure 6.)
GaAs FET Drivers
Figure 7 illustrates a high-speed GaAs FET driver. To turn
the GaAs FET on 0 V are applied to its gate via S1, whereas
to turn it off, –8 V are applied via S2. This high-speed,
low-power driver is especially suited for applications that
require a large number of RF switches, such as phased
array radars.
DG611/612/613
8 Siliconix
S-52880—Rev. E, 28-Apr-97
Applications (Cont’d)
Si581
75 W
+
–
LF356
1/4 DG611
5 V Control
Analog
Input
Input Buffer
S
IN
D
Output Buffer
±5 V Output
to A/D
+5 V +12 V
–5 V
CHOLD
650 pF Polystyrene
Figure 5. High-Speed Sample-and-Hold
+
–
Si582
75 W
1/2 DG613
Background D
Output Buffer Composite
Output
+5 V +12 V
–5 V
75 W
Titles
5 V Control
75 W
250 W
1/2 Si584
250 W
Figure 6. A Pixel-Rate Switch Creates Title Overlays
1/2 DG613
D1
+5 V
–8 V
D2
S1
S2
IN1
IN2
GND V–
GaAs
RF
IN RF
OUT
VLV+
Figure 7. A High-Speed GaAs FET Driver that Saves Power
5 V
