QUAD OP AMP AND VOLTAGE REFERENCE AP4303
Data Sheet
1
Apr. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
General Description
The AP4303 is a monolithic IC that contains quad
operational amplifiers and a precision shunt regulator,
1.25Vfor AP4303-C or 1.24V for AP4303-D respec-
tively. It is specifically designed to regulate th e output
current and voltage levels of switching battery charg-
ers and power supplies.
The four Op Amps feature accurate voltage and current
control. Combining a stable vol tage reference with the
four Op Amps makes AP4303 ideal for use in multi-
function charger, power supply voltage monitor, signal
processing and control system.
The IC offers the power converter designer a control
solution that features increased precision with a corre-
sponding reduction in system comp lexity and cost.
The AP4303 is available in standard packages of DIP-
16 and SOIC-16.
Features
Op Amp
·Input Offs et Voltage: 0.5mV
·Supply Current: 250µA per Op Amp at 5.0V Sup-
ply Voltage
·Unity Gain Bandwidt h: 1MHz
·Output Voltage Swing: 0 to (VCC - 1.5)V
·Power Supply Range: 3 to 18V
Voltage Reference
·Reference Voltage Tolerance: 0.5%, 1%
·Sink Current Capability from 0.1 to 80mA
·Output Dynamic Impedance: 0.2
·Externally Adjusted Output Voltage Reference:
1.25V for AP4303-C and 1.24V for AP4303-D
Applications
·Battery Charger
·Switching Power Supply
Figure 1. Package Types of AP4303
SOIC-16 DIP-16
QUAD OP AMP AND VOLTAGE REFERENCE AP4303
Data Sheet
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Apr. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
Functional Block Diagram
Pin Configuration
Figure 2. Pin configuration of AP4303
INPUT 1-
INPUT 1+
VCC
OUTPUT 4
INPUT 4-
INPUT 4+
GND
Top View
OUTPUT 1
INPUT 2+
INPUT 2-
OUTPUT 2
VREF
INPUT 3+
INPUT 3-
OUTPUT 3
CATHODE
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Figure 3. Functional Block Diagram of AP4303
-+
--
-+
++
OUTPUT 4
INPUT 4-
INPUT 4+
GND
CATHODE
OUTPUT 3
INPUT 3-
INPUT 3+
VREF
OUTPUT 2
INPUT 2-
INPUT 2+
VCC
INPUT 1+
INPUT 1-
OUTPUT 1 1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
(SOIC-16/DIP-16)
M Package/P Package
QUAD OP AMP AND VOLTAGE REFERENCE AP4303
Data Sheet
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Apr. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
Figure 5. Voltage Refere nce Functional Block Diagram
Functional Block Diagram (Continued)
Figure 4. Op Amp Functional Block Diagram
(Each Amplifier)
CATHODE
GND
VREF
20µA20µA
Q2
Q4
Q3
Q1
Q8 Q9
6µA4µA
Q10
Q11
50uA
Q5
Q6
Q13
Rsc
Cc
100µA
Q7
INPUT-
INPUT+ OUTPUT
Q12
VCC
QUAD OP AMP AND VOLTAGE REFERENCE AP4303
Data Sheet
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Apr. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
Circuit Type
Voltage Tolerance
A: 0.5%
B: 1%
Package
P: DIP-16
M: SOIC-16
Output Voltage Reference
C: 1.25V
D: 1.24V
AP4303 -
E1: Lead Free
Blank: Tin Lead
TR: Tape and Reel
Blank: Tube
Package Reference
Voltage Voltage
Tolerance Tempera-
tur e Range Part Number Marking ID Packing
Type
Tin Lead Lead Free Tin Lead Lead Free
DIP-16
1.25V 0.5%
-40 to 85oC
AP4303AP-C AP4303AP-CE1 AP4303AP-C AP4303AP-CE1
Tube
1% AP4303BP-C AP4303BP-CE1 AP4303BP-C AP4303BP-CE1
1.24V 0.5% AP4303AP-D AP4303AP-DE1 AP4303AP-D AP4303AP-DE1
1% AP4303BP-D AP4303BP-DE1 AP4303BP-D AP4303BP-DE1
SOIC-16
1.25V
0.5%
-40 to 85oC
AP4303AM-C AP4303AM-CE1 AP4303AM-C AP4303AM-CE1 Tube
AP4303AM-CTR AP4303AM-CTRE1 AP4303AM-C AP4303AM-CE1 Tape &
Reel
1%
AP4303BM-C AP4303BM-CE1 AP4303BM-C AP4303BM-CE1 Tube
AP4303BM-CTR AP4303BM-CTRE1 AP4303BM-C AP4303BM-CE1 Tape &
Reel
1.24V
0.5%
AP4303AM-D AP4303AM-DE1 AP4303AM-D AP4303AM-DE1 Tube
AP4303AM-DTR AP4303AM-DTRE1 AP4303AM-D AP4303AM-DE1 Tape &
Reel
1%
AP4303BM-D AP4303BM-DE1 AP4303BM-D AP4303BM-DE1 Tube
AP4303BM-DTR AP4303BM-DTRE1 AP4303BM-D AP4303BM-DE1 Tape &
Reel
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Ordering Information
QUAD OP AMP AND VOLTAGE REFERENCE AP4303
Data Sheet
5
Apr. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
Parameter Min Max Unit
Supply Voltage 3 18 V
Ambient Temperature -40 85 oC
Recommended Operating Conditions
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings " may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other con ditions
beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Max-
imum Ratings " for extended periods may affect device reliability.
Parameter Symbol Value Unit
Power Supply Voltage (VCC to GND) VCC 20 V
Op Amp Input Voltage Range VIN -0.3 to VCC + 0.3 V
Op Amp Input Differentials Voltage VID 20 V
Voltage Reference Cathode Current (Pin 9) IK100 mA
Power Dissipation DIP-16 PD1000 mW
SOIC-16 1000
Storage Temperature Range TSTG -65 to 150 oC
ESD Protection Voltage (Machine Model) >200 V
Absolute Maximum Ratings (Note 1)
QUAD OP AMP AND VOLTAGE REFERENCE AP4303
Data Sheet
6
Apr. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
Operating Conditions: VCC = +5V, TA= 25oC unless otherwise specified.
Electrical Characteristics
Parameter Conditions Min Typ Max Unit
Total Supply Current, Excluding
Current in Voltage Reference VCC = 5V, no load, -40oC TA 85oC1.0 1.6 mA
VCC = 18V, no load, -40oC TA 85oC 1.2 2.4
Voltage Reference Section
Reference Voltage for AZ4303C IKA= 10mA
TA = 25oC
0.5% tolerance 1.244 1.250 1.256 V
1% tolerance 1.237 1.263
Reference Voltage for AZ4303D IKA = 10mA
TA = 25oC
0.5% tolerance 1.234 1.240 1.246 V
1% tolerance 1.227 1.252
Reference Voltage Deviation over
Full Temperature Range IKA = 10mA, TA = -40 to 85oC517mV
Minimum Cathode Current
for Regulation - 0.1 0.2 mA
Ratio of Change in VREF to that of
Cathode Voltage IKA = 10mA VREF ~ 10V 1.0 2.7 mV/V
10V ~ 18V 0.5 2.0
Reference Current IKA = 10mA, R1 = 10K, R2 = 0.7 4 µA
The Deviation of Reference Current
over Temperature VKA = VREF, IKA = 10mA,
TA = -40oC to 85oC
0.4 1.2 µA
Off-State Cathode Current VREF = 0, VKA = 18V 0.05 1.0 µA
Dynamic Impedance IKA = 1.0 to 80mA, f<1kHz 0.2 0.5
Op Amp Section (per OPA)
(VCC = 5V, VO = 1.4V, TA = 25oC, Unless otherwise noted)
Input Offset Voltage TA = 25oC0.5 3mV
TA = -40 to 85oC5
Input Offset Voltage Temperature
Drift TA = -40 to 85oC 7µV/ oC
Input Offset Current TA = 25oC230 nA
Input Bias Current TA = 25oC 20 150 nA
QUAD OP AMP AND VOLTAGE REFERENCE AP4303
Data Sheet
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Apr. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
Electrical Characteristics (Continued)
Operating Conditions: VCC = +5V, TA= 25oC unless otherwise specified.
Parameter Conditions Min Typ Max Unit
Op Amp Section (per Op Amp)
(VCC = 5V, VO = 1.4V, TA = 25oC, unless otherwise noted)
Input Offset Voltage TA = 25oC0.5 3 mV
TA = -40 to 85oC5
Input Offset Voltage Temperature
Drift TA = -40 to 85oC 7µV/ oC
Input Offset Current TA = 25oC230nA
Input Bias Current TA = 25oC 20 150 nA
Input Voltage Range VCC = 0 to 18V 0 VCC -
1.5 V
Common Mode Rejection Ratio TA = 25oC, VCM = 0 to 3.5V 70 85 dB
Large Signal Volt age Gain VCC = 15V, RL = 2k, VO = 1.4 to 11.4V 85 100 dB
Power Supply Rejection Ratio VCC = 5 to 18V 70 90 dB
Output Current Source VCC = 15V, VID = 1V, VO = 2V 20 40 mA
Sink VCC = 15V, VID = -1V, VO = 2V 10 20 mA
Output Voltage Swing (High) VCC = 18, RL = 10k, VID = 1V 16 16.5 V
Output Voltage Swing (Low) VCC = 18, RL = 10k, VID = -1V 17 100 mV
Slew Rate VCC = 18V, RL = 2k, AV = 1,
VIN = 0.5 to 2V, CL = 100pF 0.3 0.5 V/µ s
Gain Bandwidth Product VCC = 18V, RL = 2k, CL = 100pF,
VIN = 10mV, f=100kHz 0.7 1MHz
QUAD OP AMP AND VOLTAGE REFERENCE AP4303
Data Sheet
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Apr. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
Typical Performance Characteristics
Figure 6. Cathode Current vs. Cathode Voltage Figure 7.Cathode Current vs. Cathode Vo ltage
-1 0 1
-150
-100
-50
0
50
100
150
Cathode Current (mA)
Cath ode Voltage (V)
AP4303-C
VKA=VREF
TA=25oC
-1 0 1
-150
-100
-50
0
50
100
150
Cathode Current (mA)
Cath ode Voltage (V)
AP4303-D
VKA=VREF
TA=25oC
1K 10K 100K 1000K
0
10
20
30
40
50
601K 10K 100K 1000K
0
10
20
30
40
50
60
TA = 25oC
IKA = 10mA
Av (dB)
Small Signal Frequency
Figure 8. Voltage Refe rence Small Signal Voltage Gain
vs. Frequency
0246
0
1
2
3
4
5
TA=25oC
Input
Input and Output Volt age (V )
Time ( µS)
Output
Figure 9. Pulse Response of VREF with respect to VKA
QUAD OP AMP AND VOLTAGE REFERENCE AP4303
Data Sheet
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Apr. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
Typical Performance Characteristics (Continued)
-40 -20 0 20 40 60 80 100 120
0
5
10
15
20
25
30
Ambient Temperature (oC)
Input Bias Current (nA)
VCC=15V
Figure10. Op Amp Input Current
0 2 4 6 8 101214161820
60
70
80
90
100
110
Voltage Gain(dB)
Supply Voltage (V)
RL=2K
RL=20K
Figure 11. Op Amp Voltage Gain
1HZ 10HZ 100HZ 1kHZ 10kHZ 100kHZ 1MHZ
0
10
20
30
40
50
60
70
80
90
100
110
Voltage Gain(dB)
Frequency
VCC: 10V to 15VDC
TA: -40oC to 85oC
R 10M
VIN VCC/2
VO
VCC
0.1uF
Figure 12. Open Loop Frequency Response
QUAD OP AMP AND VOLTAGE REFERENCE AP4303
Data Sheet
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Apr. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
Mechanical Dimensions
DIP-16 Unit: mm(inch)
18.800(0.740)
0.254(0.010) 2.540(0.100)
6°
4°
1.524(0.060)TYP
5°
4°
6°
Φ3.000(0.118)
Depth
0.050(0.002)
0.150(0.006)
0.700(0.028)
19.200(0.756)
R0.750(0.030)
6.200(0.244)
3.000(0.118)
3.600(0.142)
3.710(0.146)
4.310(0.170)
0.510(0.020)MIN
0.360(0.014)
0.560(0.022)
6.600(0.260)
8.200(0.323)
9.400(0.370)
0.204(0.008)
0.360(0.014)
3.200(0.126)
3.600(0.142)
7.620(0.300)TYP
TYP
QUAD OP AMP AND VOLTAGE REFERENCE AP4303
Data Sheet
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Apr. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
SOIC-16 Unit: mm(inch)
7°
10.000(0.394)
6.040(0.238)
0.406(0.016)
20:1
A
1.650(0.065) 0.700(0.028)
7°
1°
5°
B
C
1.000(0.039)
S 1.000(0.039)
0.200(0.008)
20:1
B
C
50:1
C-C
0.250(0.010)
0.200(0.008)MIN
0.500(0.020)
0.600(0.024)
0.250(0.010)
Depth 0.060(0.002)
0.100(0.004)
2.000(0.079)
1.300(0.051)
1.000(0.039)
1.270(0.050)
Depth 0.200(0.008)
0.250(0.010)
0.150(0.006)
R0.200(0.008)
R0.200(0.008)
0.203(0.008)
A
3.940(0.155)
3°
8°
9.5°
8°
8°
7°
0.400(0.016)×45°
φ
φ
Mechanical Dimensions (Continued)
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ducts or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for
use of any its products for any part icular purp ose, nor d oes BCD Semiconducto r Manufacturi ng Limited assume any
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